DUT1506 – 600V, 15A

August 2009
DUT1506 – 600V, 15A
Preliminary
HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE
General Description
Features
The DUT1506 is a GaAs P-I-N Rectifier. It uses a
patented liquid phase epitaxy (LPE) construction
to provide temperature performance above current
Silicon, Silicon Carbide and Gallium Nitride
products of a similar specification. The device is
able to function stably well above the maximum TJ
of more traditional diodes of this type while
maintaining parity of performance in terms of key
parameters such as recovery time and forward
voltage.
Applications
Package Types
TO-257
High maximum junction temperature; up to
+260°C vs. +175°C for silicon diodes
Lower and temperature independent
dynamic recovery characteristics over the
full specified temperature range
Lower leakage current at all operating
temperatures
Very low capacitance
TO-276AB (SMD)
High temperature electronics
Power Modules
Hybrid circuits
BARE DIE
Thermal Characteristics
SYMBOL
PARAMETER
RATINGS
UNITS
RθJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276Al
3.51
°C/W
RθJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-257AlN
1.45
°C/W
RθJC
MAXIMUM THERMAL RESISTANCE, JUNCTION TO CASE
TO-276AB
1.24
°C/W
TO-257Al / TO-257AlN
TO-276AB
BARE DIE (3.1mm²)
1
2
1 2 3
1.
2.
3.
1
2
3
PACKAGE
1
3
ANODE
COMMON CATHODE
COMMON CATHODE
1.
2.
CATHODE
ANODE
(DIE BACKSIDE)
PACKAGE
TEMP RANGE
DUT1506AL
TO-257Al
-65 TO 260°C
DUT1506ALN
TO-257AlN
-65 TO 260°C
DUT1506S
TO-276AB
-65 TO 260°C
DUT1506-AG
BARE DIE
-65 TO 260°C
DUT1506-GG
BARE DIE
-65 TO 260°C
Europe: sales@mintech.co.uk
USA : ussales@mintech.co.uk
China: chinasales@mintech.co.uk
CATHODE
ANODE
CATHODE
Rev. 1.4 7th August 2009
ORDERING
PART #
1
© Mintech Semiconductors Ltd
www.mintech.co.uk
Absolute Maximum Ratings
SYMBOL
PARAMETER
RATINGS
UNITS
VRRM
PEAK REPETETIVE REVERSE VOLTAGE
600
V
VRWM
WORKING PEAK REPETETIVE REVERSE VOLTAGE
600
V
VR
DC BLOCKING VOLTAGE
600
V
IF(AV)
AVERAGE RECTIFIED FORWARD CURRENT @ 260°C
15
A
IFSM
NON-REPETETIVE PEAK SURGE CURRENT
60Hz SINGLE HALF-SINE WAVE
150
A
TJ ,TSTG
OPERATING AND STORAGE TEMPERATURE RANGE
-65 to +260
°C
Electrical Characteristics
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
VFM1
IF=15A
TC = 25°C
TC = 175°C
TC = 260°C
-
1.8
2.1
2.3
1.9
2.2
2.5
V
IRM1
VR=600V
TC = 25°C
TC = 175°C
TC = 260°C
-
0.40
125
1000
1
130
1100
µA
IF=1A, di/dt = 200 A/µs, VR=30V
TC = 25°C
TC = 175°C
TC = 260°C
-
30
30
30
35
35
35
ns
tRR
IRR
QRR
IF=15A, di/dt = 200 A/µs, VR=200V
TC = 25°C
-
65
9
300
75
10
370
ns
A
nC
tRR
IRR
QRR
IF=15A, di/dt = 200 A/µA, VR=200V
TC = 175°C
-
65
9
300
75
10
370
ns
A
nC
tRR
IRR
QRR
IF=15A, di/dt = 200 A/µA, VR=200V
TC = 260°C
-
65
9
300
75
10
370
ns
A
nC
CJ
TJ= 25°C, f = 1MHz, VR = 200V
-
-
18
22
pF
W AVL
AVALANCHE ENERGY ( L=2Mh )
-
10
-
-
mJ
tRR
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Rev. 1.4 7th August 2009
2
© Mintech Semiconductors Ltd
www.mintech.co.uk
Typical Performance Characteristics
260°C
25°C
175°C
260°C
175°C
25°C
TBA – IRR
VS DI/DT
25°C
Rev. 1.4 7th August 2009
3
© Mintech Semiconductors Ltd
www.mintech.co.uk
Mechanical Dimensions
TO-257
Note:
All dimensions in millimetres
Pins must not be bent less than
4.0mm from case
Finish – Electroless Ni 3-5 µm thick
TO-276AB(SMD)
Note:
All dimensions in millimeters [inches]
Rev. 1.4 7th August 2009
4
© Mintech Semiconductors Ltd
www.mintech.co.uk
Mechanical Dimensions
Bare Die
PASSIVATION
EPITAXIAL P-I-N LAYER
CATHODE
CATHODE
ANODE
p+ SUBSTRATE
METALISATION
3.1mm
2.6mm
R = 0.3mm
DIMENSIONS
3.1mm x 3.1mm
3.1mm
2.6mm
CATHODE
THICKNESS
400µm ± 20µm
Note: For custom thicknesses please contact us
TOP METAL
Al OR Au (See order code below)
BACK METAL
Au
DUT1506-AG
Al TOPSIDE Au BACKSIDE
DUT1506-GG
Au TOPSIDE Au BACKSIDE
Waffle Pack Dimensions
Note: For other supply formats please contact us
A
X
Y
Z
POCKET DETAILS
X = 3.20mm ±0.05mm pocket size
Y = 3.20mm ±0.05mm pocket size
Z = 1.19mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 10 X 10 (100)
OVERALL TRAY SIZE
X
Size = 50.80mm ±0.10mm
Height = 3.96mm +0.05mm -0.08mm
Flatness = 0.10mm
Rev. 1.4 7th August 2009
5
© Mintech Semiconductors Ltd
www.mintech.co.uk
DISCLAIMER
MINTECH SEMICONDUCTORS IN PARTNERSHIP WITH CLIFTON RESERVE THE RIGHT TO MAKE
CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY,
FUNCTION, OR DESIGN.
CLIFTON AS AND MINTECH SEMICONDUCTORS DO NOT ASSUME ANY LIABILITY ARISING OUT
OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DO
WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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MINTECH SEMICONDUCTORS & CLIFTON PRODUCTS ARE NOT AUTHORIZED FOR USE AS
CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF MINTECH SEMICONDUCTORS AND CLIFTON.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury to the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Rev. 1.4 7th August 2009
6
© Mintech Semiconductors Ltd
www.mintech.co.uk