EEPROM
AS58C1001
128K x 8 EEPROM
PIN ASSIGNMENT
(Top View)
Radiation Tolerant
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)
AVAILABLE AS MILITARY
SPECIFICATIONS
z
z
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
SMD 5962-38267
MIL-PRF-38535
FEATURES
High speed: 150, 200, and 250ns
Data Retention: 10 Years
z Low power dissipation, active current (20mW/MHz
(TYP)), standby current (100μW(MAX))
z Single +5V (+10%) power supply
z Data Polling and Ready/Busy Signals
z Erase/Write Endurance (10,000 cycles in a page mode)
z Software Data protection Algorithm
z Data Protection Circuitry during power on/off
z Hardware Data Protection with RES pin
z Automatic Programming:
Automatic Page Write: 10ms (MAX)
128 Byte page size
z
z
OPTIONS
z
z
z
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
GENERAL DESCRIPTION
MARKINGS
The AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x
8 bits. The AS58C1001 is capable or in system electrical Byte and
Page reprogrammability.
The AS58C1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology and
CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make
its erase and write operations faster. The AS58C1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection.
Hardware data protection is provided with the RES pin, in addition to noise
protection on the WE signal and write inhibit during power on and
off. Software data protection is implemented using JEDEC Optional
Standard algorithm.
The AS58C1001 is designed for high reliability in the most demanding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles
in the Page Mode.
Timing
150ns access
-15
200ns access
-20
250ns access
-25
Packages
Ceramic Flat Pack
F
No. 306
Radiation Shielded Ceramic FP* SF
No. 305
Ceramic SOJ
DCJ No. 508
Operating Temperature Ranges
-Military (-55oC to +125oC)
XT
IT
-Industrial (-40oC to +85oC)
-Full Military Processing (-55oC to +125oC)
883C
*NOTE: Package lid is connected to ground (Vss). 2-sided shielding
provided via a Tungsten lid and a Tungsten slug on the underside of
package. 6.5X typ. TID boost due to shielding. (Geostationary orbit) Proven
typ. total dose 40K to 100K RADS. Contact factory for more information.
Micross can perform TID lot testing.
For more products and information
please visit our web site at
www.micross.com
AS58C1001
Rev. 5.9 11/10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Micross Components reserves the right to change products or specifications without notice.
1
EEPROM
AS58C1001
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
I/O0
High Voltage Generator
I/O7
Ready/Busy
I/O Buffer
and
Input Latch
OE\
Control Logic and Timing
CE\
WE\
RES\
A0
Y Gating
Y Decoder
A6
Address
Buffer and
Latch
X Decoder
Memory Array
A7
A16
Data Latch
MODE SELECTION
1
MODE
CE\
OE\
WE\
RES\
RDY/BUSY\
I/O
READ
VIL
VIL
VIH
VH
High-Z
DOUT
STANDBY
VIH
X
X
X
High-Z
High-Z
WRITE
VIL
VIH
VIL
VH
High-Z to VOL
DIN
DESELECT
VIL
VIH
VIH
VH
High-Z
High-Z
X
X
VIH
X
---
---
X
VIL
X
X
---
---
VIL
VIL
VIH
VH
VOL
Data Out
(I/O7)
X
X
X
VIL
High-Z
High-Z
WRITE
INHIBIT
DATA
POLLING
PROGRAM
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
2
EEPROM
AS58C1001
DATA PROTECTION
FUNCTIONAL DESCRIPTION
To protect the data during operation and power on/off, the
AS58C1001 has:
1. Data protection against Noise on Control Pins (CE\, OE\,
WE\) during Operation. During readout or standby, noise on
the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. To prevent this phenomenon,
the AS58C1001 has a noise cancellation function that cuts noise
if its width is 20ns or less in programming mode. Be careful
not to allow noise of a width of more than 20ns on the control
pins.
AUTOMATIC PAGE WRITE
The Page Write feature allows 1 to 128 Bytes of data to
be written into the EEPROM in a single cycle and allows the
undefined data within 128 Bytes to be written corresponding
to the undefined address (A0 to A6). Loading the first Byte of
data, the data load window of 30μs opens for the second. In
the same manner each additional Byte of data can be loaded
within 30μs. In case CE\ and WE\ are kept high for 100μs after
data input, the EEPROM enters erase and write automatically
and only the input data can be written into the EEPROM. In
Page mode the data can be written and accessed 104 times per
page, and in Byte mode 103 times per Byte.
DATA\ POLLING
Data\ Polling allows the status of the EEPROM to be determined. If the EEPROM is set to Read mode during a Write
cycle, and inversion of the last Byte of data to be loaded outputs
from I/O, to indicate that the EEPROM is performing a Write
operation.
WRITE PROTECTION
(1) Noise protection: Noise on a write cycle will not act as a
trigger with a WE\ pulse of less than 20ns.
(2) Write inhibit: Holding OE\ low, WE\ high or CE\ high,
inhibits a write cycle during power on/off.
WE\ AND CE\ PIN OPERATION
During a write cycle, addresses are latched by the falling
edge of WE\ or CE\, and data is latched by the rising edge of
WE\ or CE\.
WRITE/ERASE ENDURANCE AND
DATA RETENTION
The endurance with page programming is 104 cycles (1%
cumulative failure rate) and the data retention time is more than
10 years when a device is programmed less than 104 cycles.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
3
EEPROM
AS58C1001
(EXAMPLE)
Vcc
RES\
*unprogrammable
*unprogrammable
FUNCTIONAL DESCRIPTION (continued)
Write Address
DATA PROTECTION (continued)
2. Data protection at Vcc on/off.
When RES\ is low, the EEPROM cannot be erased
and
programmed. Therefore, data can be protected by
keeping RES\ low when Vcc is switched. RES\ should be
high during programming because it does not provide a latch
function. When Vcc is turned on or off, noise on the control
pins generated by external circuits (CPU, etc.) may turn the
EEPROM to programming mode by mistake. To prevent this
unintentional programming, the EEPROM must be kept in an
unprogrammable, standby or readout state by using a CPU
reset signal to RES\ pin.
In addition, when RES\ is kept high at Vcc on/off timing,
the input level of control pins (CE\, OE\, WE\) must be held
as CE\=Vcc or OE\=LOW or WE\=Vcc level.
5555
AA
2AAA
55
5555
A0
The Software data protection mode can be cancelled by
inputting the following 6 Bytes. This changes the AS58C1001
to the Non-Protection mode, for normal operation.
3. Software Data Protection
To protect against unintentional programming caused
by noise generated by external circuits, AS58C1001 has a
Software data protection function. To initate Software data
protection mode, 3 bytes of data must be input, followed by
a dummy write cycle of any address and any data byte. This
exact sequence switches the device into protection mode.
AS58C1001
Rev. 5.9 11/10
Write Data
(Normal Data Input)
Address
5555
Data
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
20
Micross Components reserves the right to change products or specifications without notice.
4
EEPROM
AS58C1001
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V1
Storage Temperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55oC to +125oC
Soldering Temperature Range...............................................260oC
Maximum Junction Temperature**....................................+150°C
Power Dissipation...................................................................1.0W
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operation section of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC; Vcc = 5V +10%)
PARAMETER
Input High (Logic 1) Voltage
3
Input Low (Logic 0) Voltage
Input Voltage (RES\ Pin)
4
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
PARAMETER
CONDITION
OV < VIN < Vcc
Output(s) disabled, OV < VOUT < Vcc
IOH = -400 μA
IOL = 2.1 mA
CONDITIONS
Power Supply Current:
Operating
SYMBOL
VIH
VIL
VH
ILI
ILO
VOH
VOL
SYM
IOUT=OmA, Vcc = 5.5V
Cycle=1μS, Duty=100%
MIN
2.2
-0.3
Vcc-0.5
-2
-2
2.4
MAX
VCC + 0.3V
0.8
VCC +1.0
2
2
0.4
-15
MAX
-20
-25
20
20
20
ICC3
UNITS
V
V
V
μΑ
μΑ
V
V
NOTES
9
2
UNITS NOTES
mA
IOUT=OmA, Vcc = 5.5V
Cycle=MIN, Duty=100%
65
55
50
CE\=Vcc, Vcc = 5.5V
ICC1
350
350
350
μA
CE\=VIH, Vcc = 5.5V
ICC2
3
3
3
mA
Power Supply Current:
Standby
CAPACITANCE
PARAMETER
Input Capacitance
Output Capactiance
AS58C1001
Rev. 5.9 11/10
CONDITIONS
o
TA = 25 C, f = 1MHz
VIN = 0
SYMBOL
MAX
UNITS
CIN
6
pF
Co
12
pF
NOTES
Micross Components reserves the right to change products or specifications without notice.
5
4
EEPROM
AS58C1001
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(-55oC < TC < 125oC; Vcc = 5V +10%)
Test Conditions
z
z
z
z
Input Pulse Levels:
Input rise and fall times:
Output Load:
Reference levels for measuring timing:
0.0V to 3.0V
< 20ns
1 TTL Gate +100pF (including scope and jig)
1.5V, 1.5V
AC ELECTRICAL CHARACTERISTICS FOR SOFTWARE DATA
PROTECTION CYCLE OPERATION
SYMBOL
PARAMETER
Byte Load Cycle Time
Write Cycle Time
tBLC
MIN
0.55
MAX
30
UNITS
μS
tWC
10
---
mS
AC ELECTRICAL CHARACTERISTICS FOR DATA\ POLLING OPERATION
SYMBOL
MAX
---
UNITS
tOEH
MIN
0
Output Enable to Write Setup Time
tOES
0
---
ns
Write Start Time
tDW
150
---
ns
Write Cycle Time
tWC
---
10
ms
PARAMETER
Output Enable Hold Time
AS58C1001
Rev. 5.9 11/10
ns
Micross Components reserves the right to change products or specifications without notice.
6
EEPROM
AS58C1001
AC ELECTRICAL CHARACTERISTICS FOR PAGE ERASE AND PAGE WRITE
OPERATIONS
μ
μ
μ
μ
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
7
EEPROM
AS58C1001
AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE WRITE
OPERATIONS
PARAMETER
Address Setup Time
Chip Enable to Write Setup Time
SYMBOL
MIN
MAX
UNITS
tAS
0
---
ns
0
---
ns
250
---
ns
250
---
ns
tCS
7
tCW
Write Pulse Width
tWP
8
7
Address Hold Time
tAH
150
---
ns
Data Setup Time
tDS
100
---
ns
Data Hold Time
tDH
10
---
ns
Chip Enable Hold Time
tCH
0
---
ns
Out Enable to Write Setup Time
tOES
0
---
ns
Output Enable Hold Time
tOEH
0
---
ns
Write Cycle Time
tWC
10
---
ms
Byte Load Window
tBL
100
---
μs
Time to Device Busy
tDB
120
---
ns
RES\ to Write Setup Time
tRP
100
---
μs
1
---
μs
7
Vcc to RES\ Setup Time
tRES
AC TEST CONDITIONS
NOTES:
Input Pulse Levels............................................0V to 3V
Input Rise and Fall Times....................................<20ns
Input Timing Reference Level................................1.5V
Output Reference Level..........................................1.5V
Output Load................................................See Figure 1
1.
2.
3.
4.
5.
Relative to Vss
VIN min = -3.0V for pulse widths <50ns
VIL min = -1.0V for pulse widths <50ns
IIL on RES\ = 100ua MAX
tOF is defined as the time at which E the output becomes and
open circuit and data is no longer driven.
6. Use this device in longer cycle than this value
7. WE\ controlled operation
8. CE\ controlled operation
9. RES\ pin VIH is VH
10. Reference only, not tested
Q
100pF
10
1 TTL GATE EQ.
Figure 1
OUTPUT LOAD EQUIVALENT
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
8
EEPROM
AS58C1001
READ TIMING WAVEFORM
Address
tACC
CE\
OE\
WE\
tOH
tCE
tDF
tOE
High-Z
tRR
Data Out
Data Out Valid
tDFR
RES\
SOFTWARE DATA PROTECTION TIMING WAVEFORM (protection mode)
Vcc
CE\
WE\
5555
AA
AAAA
or
2AAA
55
5555
A0
tWC
{
Address
Data
tBLC
Write Address
Write Data
SOFTWARE DATA PROTECTION TIMING WAVEFORM (non-protection mode)
Vcc
tWC
Normal active
mode
CE\
WE\
Address
Data
AS58C1001
Rev. 5.9 11/10
AAAA
or
2AAA
5555
AA 55
5555 5555
80
AA
AAAA
or
2AAA
55
5555
20
Micross Components reserves the right to change products or specifications without notice.
9
EEPROM
AS58C1001
DATA\ POLLING TIMING WAVEFORM
Address
An
An
CE\
WE\
tCE
tOES
OE\
tDW
tOE
DIN X
I/O7
DOUT
DOUT X
tWC
TOGGLE BIT WAVEFORM
Next Mode
Address
tCE
CE\
WE\
tOE
OE\
tOES
I/O7
DIN
DOUT
DOUT
tWC
DOUT
DOUT
tDW
In transition from HI to LOW or LOW to HI.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
10
EEPROM
AS58C1001
PAGE WRITE TIMING WAVEFORM
(WE\ CONTROLLED)
A7 - A16
A0 - A6
WE\
tAS
tAH
tWP
tCS
tBL
tDL
tCH
tBLC
tWC
CE\
tOES
OE\
tDH
tDS
DIN
RDY/Busy\
High-Z
tDW
tDB
High-Z
tRP
tRES
VCC
In transition from HI to LOW or LOW to HI.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
11
EEPROM
AS58C1001
PAGE WRITE TIMING WAVEFORM
(CE\ CONTROLLED)
Address
A0 to A16
CE\
tAS
tAH
tCW
tWS
tBL
tDL
tWH
tBLC
tWC
WE\
tOES
OE\
tDH
tDS
DIN
RDY/Busy\
High-Z
tDW
tDB
High-Z
tRP
tRES
VCC
In transition from HI to LOW or LOW to HI.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
12
EEPROM
AS58C1001
BYTE WRITE TIMING WAVEFORM
(WE\ CONTROLLED)
tWC
Address
tCS
tAH
tCH
CE\
tAS
tBL
tWP
WE\
tOES
tOEH
OE\
tDS
tDH
DIN
RDY/Busy\
tDB
High-Z
tDW
High-Z
tRP
tRES
VCC
In transition from HI to LOW or LOW to HI.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
13
EEPROM
AS58C1001
BYTE WRITE TIMING WAVEFORM
(CE\ CONTROLLED)
Address
tWS
tAH
tWC
tBL
tCW
CE\
tAS
tWH
WE\
tOES
tOEH
OE\
tDS
tDH
DIN
RDY/Busy\
tDB
High-Z
tDW
High-Z
tRP
tRES
VCC
In transition from HI to LOW or LOW to HI.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
14
EEPROM
AS58C1001
MECHANICAL DEFINITIONS*
Micross Case #305 (Package Designator SF)
SMD # 5962-38267, Case Outline N
E
L
e
b
D
H
Top View
A1
A
c
D2
D1
Q
E1
SYMBOL
A
A1
b
c
D
D1
D2
E
E1
e
H
L
Q
SMD SPECIFICATIONS
MIN
MAX
0.125
0.150
0.090
0.110
0.015
0.019
0.003
0.007
0.810
0.830
0.775
0.785
0.745
0.755
0.425
0.445
0.290
0.310
0.045
0.055
1.000
1.100
0.290
0.310
0.026
0.037
*All measurements are in inches.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
15
EEPROM
AS58C1001
MECHANICAL DEFINITIONS*
Micross Case #306 (Package Designator F)
SMD # 5962-38267, Case Outline M
L
E
e
b
D
H
Top View
A1
A
c
D2
Q
E1
SYMBOL
A
A1
b
c
D
D2
E
E1
e
H
L
Q
SMD SPECIFICATIONS
MIN
MAX
0.097
0.123
0.090
0.110
0.015
0.019
0.003
0.007
0.810
0.830
0.745
0.755
0.425
0.445
0.330
0.356
0.045
0.055
1.000
1.100
0.290
0.310
0.026
0.037
NOTE: All drawings are per the SMD. Micross’ package dimensional limits may differ, but they will be within the SMD
limits.
*All measurements are in inches.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
16
EEPROM
AS58C1001
MECHANICAL DEFINITIONS*
Micross Case #508 (Package Designator DCJ)
A
A1
D
e
D1
B
E2
b
E1
E
A2
SYMBOL
A
A1
A2
B
b
D
D1
E
E1
E2
e
MICROSSPACKAGESPECIFICATIONS
MIN
MAX
0.132
0.142
0.076
0.086
0.018
0.028
0.018
0.032
0.015
0.019
0.816
0.834
0.745
0.755
0.430
0.440
0.465
0.485
0.415
0.425
0.045
0.055
*All measurements are in inches.
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
17
EEPROM
AS58C1001
ORDERING INFORMATION
EXAMPLE: AS58C1001SF-15/IT
EXAMPLE: AS58C1001F-25/883C
Device Number
Package
Type
Speed
ns
Process
Device Number
Package
Type
Speed
ns
Process
AS58C1001
SF
-15
/*
AS58C1001
F
-15
/*
AS58C1001
AS58C1001
SF
SF
-20
-25
/*
/*
AS58C1001
AS58C1001
F
F
-20
-25
/*
/*
EXAMPLE: AS58C1001DCJ-20/IT
AS58C1001
Package
Type
DCJ
Speed
ns
-15
AS58C1001
DCJ
-20
/*
AS58C1001
DCJ
-25
/*
Device Number
Process
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
AS58C1001
Rev. 5.9 11/10
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
Micross Components reserves the right to change products or specifications without notice.
18
EEPROM
AS58C1001
MICROSS TO DSCC PART NUMBER
Package Designator F
Micross Part #
SMD Part#
AS58C1001F-25/883C
AS58C1001F-20/883C
AS58C1001F-15/883C
5962-3826716QMA
5962-3826717QMA
5962-3826718QMA
Package Designator SF
Micross Part #
SMD Part#
AS58C1001SF-25/883C
AS58C1001SF-20/883C
AS58C1001SF-15/883C
5962-3826716QNA
5962-3826717QNA
5962-3826718QNA
Package Designators DCJ not currenly available on the SMD
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
19
EEPROM
AS58C1001
DOCUMENT TITLE
128K x 8 EEPROM
Rev #
5.5
History
Removed ECA Package
Release Date
December 2008
Status
Release
5.6
Removed 5962 references
November 2009
Release
5.7
Removed DG drawing & references
December 2009
Release
5.8
Added Micross Information
January 2010
Release
5.9
Updated Military Specifications and
note on page 1
November 2010
Release
AS58C1001
Rev. 5.9 11/10
Micross Components reserves the right to change products or specifications without notice.
20