MIMMG75SR060UZK

MIMMG75SR060UZK
600V 75A IGBT Module
RoHS Compliant
FEATURES
· Ultra Low Loss
· High Ruggedness
· High Short Circuit Capability
· Positive Temperature Coefficient
· With Fast Free-Wheeling Diodes
APPLICATIONS
· Invertor
· Convertor
· Welder
GS Series Module
· SMPS and UPS
· Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
600
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
150
A
5
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
300
A
TC=80°C, tp=1ms
210
A
Ptot
Power Dissipation Per IGBT
625
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
600
V
TC=25°C
125
A
TC=80°C
85
A
122
A
TC=25°C
TC=100°C
AC, t=1min
7
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
500
A
Forward Current
TJ=45°C, t=8.3ms, Sine
545
A
MIMMG75SR060UZK
ELECTRICAL CHARACTERISTICS
Symbol
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=250μA
3.5
5.5
Collector - Emitter
IC=75A, VGE=15V, TJ=25°C
1.7
V
Saturation Voltage
IC=75A, VGE=15V, TJ=125°C
2.0
V
VCE=600V, VGE=0V, TJ=25°C
0.5
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
Qge
Gate Charge
VCC=300V, IC=75A , VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
VCE=600V, VGE=0V, TJ=125°C
2
-1.1
V
mA
mA
1.1
μA
230
nC
5.3
nF
0.52
nF
0.34
nF
VCC=300V, IC=75A
45
ns
Rise Time
RG =10Ω,VGE=±15V
45
ns
td(off)
Turn - off Delay Time
TJ=25°C
320
ns
tf
Fall Time
Inductive Load
35
ns
td(on)
Turn - on Delay Time
VCC=300V, IC=75A
50
ns
tr
Rise Time
RG =10Ω,VGE=±15V
45
ns
td(off)
Turn - off Delay Time
TJ=125°C
350
ns
tf
Fall Time
Inductive Load
40
ns
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
VCE=25V, VGE=0V, f =1MHz
VCC=300V, IC=75A
TJ=25°C
3.5
mJ
RG =10Ω
TJ=125°C
4.5
mJ
VGE=±15V
TJ=25°C
2.5
mJ
Inductive Load
TJ=125°C
3.5
mJ
Free-Wheeling Diode
IF=75A , VGE=0V, TJ=25°C
1.8
2.1
V
IF=75A , VGE=0V, TJ=125°C
1.5
1 .8
V
Reverse Recovery Time
IF=75A , VR=400V
50
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
45
A
Qrr
Reverse Recovery Charge
TJ=125°C
1.5
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.2
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.5
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M5）
2.5
5
N· m
Weight
150
g
300
300
250
250
200
200
T J =25°C
150
V CE =20V
T J =25°C
IC (A)
IC (A)
MIMMG75SR060UZK
150
T J =125°C
T J =125°C
100
100
50
50
0
0
0
1.5
2.5
3.5
2
3
VCE(sat)（V）
Figure1. Typical Output characteristics
0.5
1
60
40
25
V CC =300V
R G =10ohm
V GE =±15V
T J =125°C
20
Eon Eoff (mJ)
Eon Eoff (mJ)
50
30
E on
20
10
0
0
6
8 4 10
1
22
140
VGE（V）
Figure2. Typical Transfer characteristics
15
E on
10
5
E of f
E of f
0
70
30
40
50 60
RG（ohm）
Figure4. Switching Energy vs. Gate Resistor
50
100 150 200 250 300 350
IC（A）
Figure3. Switching Energy vs. Collector Current
1000
V CC =300V
I C =100A
V GE =±15V
T J =125°C
0
10
20
1000
td(off )
t (ns)
t (ns)
td(off )
100
100
tr
td(on )
td(on )
tf
V CC =300V
R G =10ohm
V GE =±15V
T J =125°C
tf
10
0
30
90 120 150 180 210
IC（A）
Figure5. Switching Times vs. Collector Current
60
V CC =300V
I C =100A
V GE =±15V
T J =125°C
tr
10
35
15
20
25 30
RG（ohm）
Figure6. Switching Times vs. Gate Resistor
0
5
10
MIMMG75SR060UZK
10
25
20
C ies
V CC =300V
I C =100A
T J =25°C
C (nF)
VGE (V)
15
10
V GE =0V
f=1MHz
1
C oes
C res
5
0
0
350
20
25
30
35
900
600
100
T J =150°C
T C =25°C
V GE =15V
100
T J =150°C
T C =25°C
V GE =15V
tsc ≤10µs
300
0
200 300 400 500 600 700
VCE（V）
Figure10. Short Circuit Safe Operating Area
300 400 500 600 700
VCE（V）
Figure9. Reverse Biased Safe Operating Area
200
175
0
100
300
T J =150°C
V GE ≥15V
150
250
125
200
100
T J =125°C
IF (A)
IC(A)
15
VCE（V）
Figure8. Typical Capacitances vs. VCE
ICsc (A)
150
75
150
100
50
T J =25°C
50
25
0
0
10
1200
200
0
0
5
1500
250
50
0
1800
300
ICpuls (A)
0.1
100
200
150
250
Qg（nC）
Figure7. Gate Charge characteristics
50
50
75 100 125 150
TC Case Temperature(°C)
Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5
3
3.5
VF（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG75SR060UZK
1
1
-1
10-1
10-2
ZthJC (K/W)
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-3
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-2
10-3
-4
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
10
10-3
10-4
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
1
2
3
4
5
Figure15. Circuit Diagram
M5
8.5
23.0
29.5
30.5
2.8x0.5
3
17.0
34.0
2
7 6
1
4.5
94.0
23.0
23.0
17.0
80.0
Dimensions in mm
Figure16. Package Outlines
4.5
4 5
6.5
ZthJC (K/W)
10