ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS(ON)max 0.550 V : ETS,typ 74 μJ Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions • Inherent Radiation Tolerance >100K TID • Compatible with Standard Gate Driver ICs • Positive Temperature Coefficient for Ease of Paralleling • Temperature Independent Switching Behavior 4 • Extremely Fast Switching • 1700 Volt Drain-Source Blocking Voltage • RDS(on)max of 0.550 • Voltage Controlled • Low Gate Charge • Low Intrinsic Capacitance APPLICATIONS: ProductSummary 1700 D (2,4) G (1) TO-258 S (3) • Flyback Auxiliary Power Supplies for: - Satellite Solar Inverters - Mil Spec High Voltage Power Supplies - Switch Mode - Uninterrupted • Jet Engine Electronics • Down-hole Electronics (Motor / Compressor Control) Internal Schematic 123 Non-isolated tab version shown. For isolated tab version, tab (4) is No Connect. MAXIMUM RATINGS Parameter Symbol ID,Tj=125 Conditions Tj=125°C Value 4 ID,Tj=175 Tj=175°C 3 PulsedDrainCurrent(1) ShortCircuitWithstandTime IDM Tc=25°C 8 A tSC VDD<800V,TC<125°C TBD μS PowerDissipation PD Tc=25°C 58 W ContinuousDrainCurrent GateͲSourceVoltage OperatingandStorageTemperature LeadTemperatureforSoldering VGS AC (2) Ͳ15to+15 Tj,Tj,stg Tsold 1/8"fromcase<10s Unit A V Ͳ55to+200* o 260 o C C (1)Limitedbypulsewidth (2)RgEXT=1ohm,tp<200ns,seeFigure5forstaticconditions *Contactfactoryfor260OC THERMAL CHARACTERISTICS Value Parameter ThermalResistance,junctionͲtoͲcase ThermalResistance,junctionͲtoͲambient ASJE1700R550 Rev. 0.1 06/11 Symbol Rth,JC Typ Ͳ Max TBD Rth,JA Ͳ TBD Unit °C/W For more products and information, please visit our website at www.micross.com Micross Components reserves the right to change products or specifications without notice. 1 ADVANCE INFORMATION SiC JFET ASJE1700R550 ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Value Typ Max Unit OffCharacteristics DrainͲSourceBlockingVoltage TotalDrainLeakageCurrent TotalGateReverseLeakage BVDS IDSS IGSS VGS=0V,ID=200ʅA 1700 Ͳ Ͳ VDS=1700V,VGS=0V,Tj=25oC Ͳ 10 200 VDS=1700V,VGS=0V,Tj=175oC VDS=1700V,VGS=Ͳ15V, Ͳ 50 1000 Ͳ 10 Ͳ Tj=25oC VDS=1700V,VGS=Ͳ15V, V μA Tj=175oC VGS=Ͳ15V,VDS=0V Ͳ 30 Ͳ Ͳ Ͳ0.02 Ͳ0.1 VGS=Ͳ15V,VDS=1700V Ͳ Ͳ0.02 Ͳ Ͳ 0.45 0.55 Ͳ 1.08 1.15 1.4 Ͳ 1.75 V Ͳ mA mA OnCharacteristics GateThresholdVoltage VGS(th) ID=3A,VGS=3V, Tj=25°C ID=3A,VGS=3V, Tj=125°C VDS=1V,ID=10mA GateForwardCurrent IGFWD VGS=3V Ͳ 135 RG f=1MHz,drainͲsourceshorted Ͳ 15 Ͳ : RG(on) VGS>2.7V;SeeFigure5 Ͳ 1 Ͳ : Ͳ 170 Ͳ Ͳ 20 Ͳ Ͳ 17 Ͳ Ͳ 20 Ͳ Ͳ 12 Ͳ Ͳ 14 Ͳ Ͳ 28 Ͳ Ͳ 30 Ͳ Ͳ 41 Ͳ Ͳ 33 Ͳ DrainͲSourceOnͲresistance GateResistance RDS(on) DynamicCharacteristics InputCapacitance Ciss OutputCapacitance Coss ReverseTransferCapacitance Crss EffectiveOutputCapacitance, energyrelated Co(er) SwitchingCharacteristics TurnͲOnDelay ton RiseTime tr TurnͲOffDelay toff FallTime tf TurnͲOnEnergy Eon TurnͲOffEnergy Eoff VDD=300V VDS=0Vto600V, VGS=0V VDS=850V,ID=3A, InductiveLoad,TJ=25oC GateDriver=+15Vunipolar RgEXT=20ohm SeeFigure14fortypicalgatedrive/ inductiveloadswitchingcircuit. : TotalSwitchingEnergy Ets Ͳ 74 Ͳ TurnͲOnDelay ton Ͳ TBD Ͳ RiseTime tr Ͳ TBD Ͳ TurnͲOffDelay toff Ͳ TBD Ͳ FallTime tf Ͳ TBD Ͳ Ͳ TBD Ͳ Ͳ TBD Ͳ Ͳ TBD Ͳ Ͳ 10 Ͳ Ͳ 8 Ͳ Ͳ 1 Ͳ TurnͲOnEnergy Eon TurnͲOffEnergy Eoff TotalSwitchingEnergy Ets TotalGateCharge Qg GateͲSourceCharge Qgs GateͲDrainCharge Qgd ASJE1700R550 Rev. 0.1 06/11 VDS=850V,ID=3A, InductiveLoad,TJ=150oC GateDriver=+15Vunipolar RgEXT=20ohm SeeFigure14fortypicalgatedrive/ inductiveloadswitchingcircuit. VDS=850V,ID=3A, VGS=+2.5V pF ns μJ ns μJ nC Micross Components reserves the right to change products or specifications without notice. 2 ADVANCE INFORMATION SiC JFET ASJE1700R550 Figure 1. Typical Output Characteristics ID = f(VDS); Tj = 25 °C; parameter: VGS Figure 2. Typical Output Characteristics ID = f(VDS); Tj = 125 °C; parameter: VGS 5.0 3.0 V 8 7 2.5 V 6 5 4 2.0 V 3 2 1.5 V 1 2 4 VDS, Drain-Source Voltage (V) 3.0 2.5 2.0 V 2.0 1.5 1.0 6 1.5 V 0 Figure 3. Typical Output Characteristics ID = f(VDS); Tj = 175°C; parameter: VGS 2 4 VDS, Drain-Source Voltage (V) 6 Figure 4. Typical Transfer Characteristics ID = f(VGS); VDS = 5V 9 3.5 3.0 V 3.0 ID, Drain-Source Current (A) ID, Drain-Source Current (A) 2.5 V 3.5 0.0 0 2.5 V 2.5 2.0 2.0 V 1.5 1.0 1.5 V 0.5 0.0 0 1 2 3 4 5 VDS, Drain-Source Voltage (V) 175oC 1.0 o 175 C 0.5 0.25 25oC 0.0 0.20 2 3 4 5 0.15 0.10 6 5 4 3 2 1 RDS(on), Drain-Source On-resistance (ȍ) 1.5 0.30 7 0.50 1.00 1.50 2.00 2.50 VGS, Gate-Source Voltage (V) 3.00 Figure 6. Drain-Source On-resistance RDS(on) = f(ID); VGS = 3.0; parameter: Tj 0.40 0.35 8 0 0.00 6 Figure 5. Gate-Source Current IGS = f(VGS); parameter: Tj IGS, Gate-Source Current (A) 4.0 0.5 0 o 25 C 0.05 0.00 2.00 150oC 1.75 1.50 125oC 1.25 1.00 0.75 25oC 0.50 0.25 0.00 1.5 2.0 2.5 3.0 0 2 4 6 8 10 ID, Drain Current (A) VGS, Gate-Source Voltage (V) ASJE1700R550 Rev. 0.1 06/11 3.0 V 4.5 ID, Drain-Source Current (A) ID, Drain-Source Current (A) 9 Micross Components reserves the right to change products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET ASJE1700R550 Figure 8. Drain-Source On-resistance RDS(ON) = f(IGS); Tj = 25oC 1.80 1.60 1.40 10mA 1.20 100mA 1.00 0.80 0.60 0.40 0.20 0.00 0 50 100 0.500 RDS(on), Drain-Source On-resistance (ȍ) RDS(on), Drain-Source On-resistance (ȍ) Figure 7. Drain-Source On-resistance RDS(ON) = f(Tj); parameter: IGS 150 0.490 0.480 0.470 0.460 0.450 0.440 0.430 0.420 0.1 200 Tj, Junction Temperature (°C) Figure 9. Typical Capacitance C = f(VDS); VGS = 0 V; f = 1 MHz VGS, Gate-Source Voltage (V) C, Capacitance (pF) 100.0 3.0 Ciss 100 Coss 10 Crss 1 2.5 2.0 1.5 1.0 0.5 0.0 0 300 600 900 1200 1500 1800 0 VDS, Drain-Source Voltage (V) 1.50 1.00 Typical 0.75 0.50 0 50 100 150 6 8 10 12 4E-05 ID, Drain Leakage Current (A) 1.25 4 Figure 12. Drain-Source Leakage ID = f(VDS); VGS = 0V; parameter: Tj -1.5mV/oC Max 2 Qg, Total Gate Charge (nC) Figure 11. Gate Threshold Voltage Vth = f(Tj), normalized VTH, Gate Threshold Voltage (V) 10.0 Figure 10. Gate Charge Qg = f(VGS); VDS = 900V; ID = 3A, Tj = 25oC 1000 4E-05 3E-05 3E-05 175oC 2E-05 125oC 2E-05 1E-05 25oC 5E-06 200 0 500 1000 1500 2000 BVDS, Drain-Source Blocking Voltage (V) Tj, Junction Temperature (oC) ASJE1700R550 Rev. 0.1 06/11 1.0 IGS, Gate-Source Current (mA) Micross Components reserves the right to change products or specifications without notice. 4 ADVANCE INFORMATION SiC JFET ASJE1700R550 Figure 13. Switching Energy Losses Es = f(ID); VDS = 850V; VGD = +15V, RGEXT = 20ohm; TC = 25oC E, Switching Energy (uJ) 120 100 80 Ets 60 Eon 40 Eoff 20 0 1 2 3 4 ID, Drain Current (A) Figure 14. Inductive Load Switching Circuit ASJE1700R550 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 5 ADVANCE INFORMATION SiC JFET ASJE1700R550 MECHANICAL DRAWING $IA "3# 4YP "3# NOTE: 1. Dimensions in mm (inches) 2. Controlling dimensions (inches) ORDERING INFORMATION BasePartNumber ASJE1700R550 Configuration Blank=NonͲisolatedTab S=IsolatedTab Package JunctionTemp.Range M=TOͲ258 Ͳ EL EX TempRanges: EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ) Processing Blank /V /S EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(consultfactory) Processing: ExamplePartNumbers: Blank=Commercial/StandardProcessing MILͲPRFͲ19500EquivalentScreeningAvailablePerSCD /V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering) /S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering) ASJE1700R550SMͲEL ASJE1700R550MͲEX has commercial plastic versions of this product available. Please refer to the SemiSouth website http://www.semisouth.com/products/products.html for datasheet specifications and ordering information. The SemiSouth part number is SJEP170R550 and is supplied in a TO-247 plastic package. ASJE1700R550 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 6 ADVANCE INFORMATION SiC JFET ASJE1700R550 DOCUMENT TITLE Normally-OFF Trench Silicon Carbide Power JFET Rev # 0.0 History Initial Release Release Date December 2010 Status Advance Information 0.1 Replaced TO-257 package with TO-258 package June 2011 Advance Information ASJE1700R550 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 7