N-Channel Power Trench® Mosfet Chip FDB075N15A 150V, 130A, 7.5mΩ1 Part V(BR)DSS FDB075N15A 150V IDn RDS(on) Typ 130A 5.5mΩ 1 Die Size 4.4 x 6.1 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • High density DC / DC Converters • Low RDS (on) per mm2 • Motor Drives • Low Gate Charge • Avalanche Rated Maximum Ratings Symbol Parameter Ratings Units VDSS Drain to Source Voltage 150 V ±20 V VGSS Gate to Source Voltage ID Drain Current IDM Drain Current TJ, TSTG EAS 2 3 Continuous (TC = 25°C) 130 Continuous (TC = 100°C) 92 Pulsed 522 Operation Junction & Storage Temperature Single Pulsed Avalanche Energy 4 A IAS=64A,VDD= 100V,L=0.24mHΩ, Starting @ TJ=25°C -55 to 175 °C 502 mJ Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V VGS(th) Gate threshold Voltage VGS = VDS, ID =250µA 2.0 3.0 4.0 V IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V - - 1 µA IDSS Zero Gate Voltage Drain Current 175°C - - 1 mA IGSS Gate to Body Leakage Current VGS = ±20V , VDS = 0V - - ±100 nA RDS(on) Static Drain to Source On Resistance 1 VGS = 10V, ID = 80A - 5.5 7.5 mΩ RDS(on) Static Drain to Source On Resistance 1 VGS = 10V, ID = 80A , 175°C - 14.2 20 mΩ 1. 2. 3. Notes: Defined by chip design, not subject to 100% production test at wafer level Performance will vary based on assembly technique, substrate choice. Current limited by bond wire config Repetitive Rating: Pulse width limited by maximum junction temperature Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Static Characteristics, TJ = 25° unless otherwise noted Dynamic Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions Min Typ Max Units - 5595 - pF VDS =75V, VGS = 0V f = 1MHz - 513 - pF - 16 - pF Rg Gate Resistance f = 1MHz - 2.4 - Ω Qg(tot) Total Gate Charge at 10V VGS = 0V to 10V - 78 - nC Qg(th) Threshold Gate Charge VGS = 0V to 2V - 11 - nC Qgs Gate to Source Gate Charge VDD =75V, ID = 80A - 26.5 - nC Qgd Gate to Drain “Miller” Charge - 14 - nC Switching Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Test Conditions VDD =75V, ID= 80A, VGS =10V RGEN = 6Ω Min Typ Max Units - 33 - ns - 39 - ns - 76 - ns - 25 - ns Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max VSD Source to Drain Forward Voltage ISD = 80A, VGS = 0V - - 1.25 VSD Source to Drain Forward Voltage ISD = 40A, VGS = 0V - - 1.2 V trr Reverse Recovery Time - 104 - ns Qrr Reverse Recovery Charge IF = 80A, dISD/dt = 100A/µs VDD = 120V - 341 - nC 4. 5. Units V Notes: Characterised by design & tested at component level, not subject to production test at wafer level Essentially independent of Operating Temperature Typical Characteristics Ordering Guide Part Number Format Detail / Drawing FDB075N15AMW Un-sawn wafer, electrical rejects inked Page 3 FDB075N15AMF Sawn wafer on film-frame Page 4 FDB075N15AMD Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Die Drawing 6096 4445 588 385 Mechanical Data Parameter Units Chip Dimensions Un-sawn 6096 x 4445 µm Chip Thickness (Nominal) 200 µm Gate Pad Size 385 x 588 µm Wafer Diameter 150 (subject to change) mm 60 (subject to change) µm Saw Street Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 4 µm Backside Metallisation & Thickness Ti/VNi/Ag 0.3 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 125µm X1 Recommended Wire Bond – Source Al 500µm X3 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 Wafer orientation on frame Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 6.53mm ±0.13mm pocket size Y = 6.53mm ±0.13mm pocket size Z = 0.81mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 5 X 5 (25) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,