FCA76N60N N-Channel SupreMOS® MOSFET Chip 600V, 76A, 36mΩ Part V(BR)DSS FCA76N60N 600V IDn RDS(on) MAX 76A 1 36mΩ Die Size 10.9 x 7.8 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • Solar Inverter • High Power & Current Handling Capability • AC-DC Power Supply • Low RDS (on) per mm2 & Low Capacitance • Low Gate Charge, Fast Switching Maximum Ratings Symbol Parameter Ratings Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ID Drain Current IDM Drain Current TJ, TSTG EAS 2 3 -DC ±30 -AC (f > 1Hz) ±30 Continuous (TC = 25°C) 76 Continuous (TC = 100°C) 48.1 Pulsed 228 Operation Junction & Storage Temperature Single Pulsed Avalanche Energy IAS = 25.3A, RG = 25Ω, Starting TJ = 25°C Peak Diode Recovery dv/dt dv/dt MOSFET dv/Ruggedness ISD≤76A,di/dt ≤ 200A/μs,VDD≤380V,Starting TJ=25°C V A -55 to 150 °C 8022 mJ 12 V/ns 100 V/ns Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 600 - - V VGS(th) Gate threshold Voltage VGS = VDS, ID =250µA 2.0 - 4.0 V IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V VDS = 480V, TJ = 125°C - - 10 100 µA IGSS Gate to Body Leakage Current VGS = ±30V , VDS = 0V - - ±100 nA VGS = 10V, ID = 38A - 28.5 36 mΩ RDS(on) Static Drain to Source On Resistance 1. 2. 3. 1 Notes: Defined by chip design, not subject to 100% production test at wafer level Performance will vary based on assembly technique and substrate choice Repetitive Rating: Pulse width limited by maximum junction temperature Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Static Characteristics, TJ = 25° unless otherwise noted Dynamic Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units gFS Forward Transconductance VDS = 40V, ID = 38A - 88 - S ESR Equivalent Series Resistance (G-S) Drain Open f=1 MHz - 1.0 - Ω Ciss Input Capacitance - 9310 12385 pF VDS = 100V, VGS = 0V f = 1MHz - 370 495 pF - 3.1 5.0 pF Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380V, VGS = 0V f = 1MHz - 196 - pF Effective Output Capacitance VDS =0V to 380V, VGS = 0V - 914 - pF - 218 285 nC - 39 - nC - 66 - nC Coss. eff. 5 Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd VDS =380V, ID = 38A VGS = 10V 5 Gate to Drain “Miller” Charge 5 Switching Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Test Conditions VDD = 380V, ID = 38A RGEN = 4.7Ω 4 Min Typ Max Units - 34 78 ns - 24 58 ns - 235 480 ns - 32 74 ns Min Typ Max - - 76 A Drain-Source Diode Characteristics, TJ = 25°C unless otherwise noted Symbol IS Parameter Test Conditions Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Drain to Source Diode Forward Voltage 4 trr Reverse Recovery Time 4 Qrr 4. 5. 3 Units - - 228 A VGS = 0V, ISD = 39A - - 1.2 V VGS = 0V, ISD = 39A dIF/dt = 100A/μs - 613 - ns Reverse Recovery Charge 16 Notes: Characterised by design & tested at component level, not subject to production test at wafer level Essentially independent of operating temperature typical characteristics µC Part Number Format Detail / Drawing FCA76N60NMW Un-sawn wafer, electrical rejects inked Page 3 FCA76N60NMF Sawn wafer on film-frame Page 4 FCA76N60NMD Singulated die / chips in waffle pack Page 4 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page2 Ordering Guide Die Drawing 10900um 7800um 584um m 365um Mechanical Data Parameter Units Chip Dimensions Un-sawn 10900 x 7800 µm Chip Thickness (Nominal) 300 µm Gate Pad Size 365 x 584 µm Wafer Diameter 150 (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 4 µm Backside Metallisation & Thickness V/Ni/Ag 0.3 µm Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 125µm X1 Recommended Wire Bond – Source Al 380µm X3 Page3 Topside Passivation Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 8.13mm ±0.13mm pocket size Y = 10.54mm ±0.13mm pocket size Z = 0.61mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 4 X 3 (12) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,