10.9 x 7.8 mm2 – FCA76N60N MOSFET Bare Die

FCA76N60N
N-Channel SupreMOS® MOSFET Chip
600V, 76A, 36mΩ
Part
V(BR)DSS
FCA76N60N
600V
IDn
RDS(on) MAX
76A
1
36mΩ
Die Size
10.9 x 7.8 mm
2
See page 2 for ordering part numbers & supply formats
Features
Applications
• Solar Inverter
•
High Power & Current Handling Capability
• AC-DC Power Supply
•
Low RDS (on) per mm2 & Low Capacitance
•
Low Gate Charge, Fast Switching
Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
600
V
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
TJ, TSTG
EAS
2
3
-DC
±30
-AC (f > 1Hz)
±30
Continuous (TC = 25°C)
76
Continuous (TC = 100°C)
48.1
Pulsed
228
Operation Junction & Storage Temperature
Single Pulsed Avalanche Energy
IAS = 25.3A, RG = 25Ω, Starting TJ = 25°C
Peak Diode Recovery dv/dt
dv/dt
MOSFET dv/Ruggedness
ISD≤76A,di/dt ≤ 200A/μs,VDD≤380V,Starting TJ=25°C
V
A
-55 to 150
°C
8022
mJ
12
V/ns
100
V/ns
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V
600
-
-
V
VGS(th)
Gate threshold Voltage
VGS = VDS, ID =250µA
2.0
-
4.0
V
IDSS
Zero Gate Voltage Drain Current
VDS = 480V, VGS = 0V
VDS = 480V, TJ = 125°C
-
-
10
100
µA
IGSS
Gate to Body Leakage Current
VGS = ±30V , VDS = 0V
-
-
±100
nA
VGS = 10V, ID = 38A
-
28.5
36
mΩ
RDS(on)
Static Drain to Source On Resistance
1.
2.
3.
1
Notes:
Defined by chip design, not subject to 100% production test at wafer level
Performance will vary based on assembly technique and substrate choice
Repetitive Rating: Pulse width limited by maximum junction temperature
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page1
Static Characteristics, TJ = 25° unless otherwise noted
Dynamic Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
gFS
Forward Transconductance
VDS = 40V, ID = 38A
-
88
-
S
ESR
Equivalent Series Resistance (G-S)
Drain Open f=1 MHz
-
1.0
-
Ω
Ciss
Input Capacitance
-
9310
12385
pF
VDS = 100V, VGS = 0V
f = 1MHz
-
370
495
pF
-
3.1
5.0
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380V, VGS = 0V
f = 1MHz
-
196
-
pF
Effective Output Capacitance
VDS =0V to 380V,
VGS = 0V
-
914
-
pF
-
218
285
nC
-
39
-
nC
-
66
-
nC
Coss.
eff.
5
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
VDS =380V, ID = 38A
VGS = 10V
5
Gate to Drain “Miller” Charge
5
Switching Characteristics4, TJ = 25°C unless otherwise noted
Symbol
Parameter
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Test Conditions
VDD = 380V, ID = 38A
RGEN = 4.7Ω 4
Min
Typ
Max
Units
-
34
78
ns
-
24
58
ns
-
235
480
ns
-
32
74
ns
Min
Typ
Max
-
-
76
A
Drain-Source Diode Characteristics, TJ = 25°C unless otherwise noted
Symbol
IS
Parameter
Test Conditions
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
4
trr
Reverse Recovery Time
4
Qrr
4.
5.
3
Units
-
-
228
A
VGS = 0V, ISD = 39A
-
-
1.2
V
VGS = 0V, ISD = 39A
dIF/dt = 100A/μs
-
613
-
ns
Reverse Recovery Charge
16
Notes:
Characterised by design & tested at component level, not subject to production test at wafer level
Essentially independent of operating temperature typical characteristics
µC
Part Number
Format
Detail / Drawing
FCA76N60NMW
Un-sawn wafer, electrical rejects inked
Page 3
FCA76N60NMF
Sawn wafer on film-frame
Page 4
FCA76N60NMD
Singulated die / chips in waffle pack
Page 4
Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page2
Ordering Guide
Die Drawing
10900um
7800um
584um
m
365um
Mechanical Data
Parameter
Units
Chip Dimensions Un-sawn
10900 x 7800
µm
Chip Thickness (Nominal)
300
µm
Gate Pad Size
365 x 584
µm
Wafer Diameter
150 (subject to change)
mm
Saw Street
80 (subject to change)
µm
Wafer orientation on frame
Wafer notch parallel with frame flat
Topside Metallisation & Thickness
Al
4
µm
Backside Metallisation & Thickness
V/Ni/Ag
0.3
µm
Silicon Nitride
Recommended Die Attach Material
Soft Solder or Conductive Epoxy
Recommended Wire Bond - Gate
Al 125µm X1
Recommended Wire Bond – Source
Al 380µm X3
Page3
Topside Passivation
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Sawn Wafer on Film-Frame – Dimensions (inches)
Die in Waffle Pack – Dimensions (mm)
A
X
X = 8.13mm ±0.13mm pocket size
Y = 10.54mm ±0.13mm pocket size
Z = 0.61mm ±0.08mm pocket depth
A = 5° ±1/2° pocket draft angle
No Cross Slots
Array = 4 X 3 (12)
Y
Z
X
OVERALL TRAY SIZE
Size = 50.67mm ±0.25mm
Height = 3.94mm ±0.13mm
Flatness = 0.30mm
DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO
RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS
GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR
DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY
ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND
CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
(a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use
provided in the labelling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Further Information - Contact your Micross sales office or email your enquiry to [email protected]
©2014 Fairchild Semiconductor Corporation & Micross Components
Page4
1. Life support devices or systems are devices or systems which,
Similar pages
600V, 77A, 36mOhm, 285nC – Die Size - 10 x 7.7 mm2 – FCH041N60E MOSFET Bare Die
100V, 50A, 12.5mOhm, 16.2nC – Die Size – 3.2 x 1.9 mm2 – FDP150N10A MOSFET Bare Die
100V, 164A, 3.9mOhm, 160nC – Die Size – 6.4 x 5.3 mm2 – FDP047N10 MOSFET Bare Die
100V, 214A, 3mOhm, 89nC – Die Size – 4.4 x 6.1 mm2 – FDB035N10A MOSFET Bare Die
4.7 x 4.27mm2 – FDP027N08 MOSFET Bare Die
250V, 69A, 34mOhm, 77nC – Die Size - 9.0 x 7.1 mm2 – FDA69N25 MOSFET Bare Die
250V, 62A, 29mOhm, 100nC – Die Size - 6.8 x 6.8 mm2 – FQA62N25C MOSFET Bare Die
FDB075N15A MOSFET Bare Die
HGTG20N60
600V, 30A, VCE(sat) 1.1V, VGE(th) min 4V, tr 46ns - tf 1.3 s, Eon 1.1mJ, Eoff 21mJ - Die Size - 6.6 x 6.4 mm 2 - FGA30N60LS IGBT DIE
650V, 75A, VCE(sat) 1.65V, VGE(th) min 4V, tr 43ns - tf 24ns, Eon 2.85mJ, Eoff 1.2mJ - Die Size - 5.4 x 5.3 mm 2 - FGH75T65UP IGBT DIE
1200V, 15A, VCE(sat) 1.9V, VGE(th) min 4.5V, tr 20ns - tf 100ns, Eon 3mJ, Eoff 0.6mJ - Die Size - 5.3 x 5.5 mm 2 - FGA15N120AN IGBT
1200V, 40A, VCE(sat) 2.6V, VGE(th) min 3.5V, 3.5V, tr 20ns - tf 40ns, Eon 2.3mJ, Eoff 1.1mJ - Die Size - 5 x 5 mm 2 - FGH40N120AN IGBT DIE
FGH60N60SM
650V, 40A, VCE(sat) 1.65V, VGE(th) min 4V, tr 26ns - tf 17ns, Eon 1.59mJ, Eoff 0.58mJ - Die Size - 3.9 x 3.9 mm 2 - FGH40T65UP IGBT DIE
600V, 150A, VCE(sat) 2.2V, VGE(th) min 5V, tr 70ns - tf 110ns, Eon 1.6mJ, Eoff 4.8mJ - Die Size - 11.1 x 11.1 mm 2 - PCSG150N60 IGBT DIE
600V, 50A, VCE(sat) 2.2V, VGE(th) min 5V, tr 30ns - tf 110ns, Eon 1.1mJ, Eoff 1.2mJ - Die Size - 6.7 x 6.5 mm 2 - PCSG50N60 IGBT DIE
1200V, 40A, VCE(sat) 1.8V, VGE(th) min 4.9V, tr 47ns - tf 10ns, Eon 2.7mJ, Eoff 1.1mJ - Die Size - 6.7 x 6.5 mm2 - FGH40T120SM IGBT DIE
ISL9R860 Rectifier Bare
ISL9R18120 STEALTH Rectifier
Die Size - 7.1 x 5.1 mm2 – RHRG75120 HYPERFAST Rectifier
RHRG30120 HYPERFAST Rectifier