1200V 10A Hermetic Schottky Diode

Silicon Carbide Schottky Diode
600 Volt 5 Amp Hermetic SMD
MYXDS0600-05DA0
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Product Overview
Features
Benefits
• High voltage 600V isolation in a small package outline
• Essentially no switching losses
• Higher efficiency
• High current 5A
• High temperature 210°C
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• BeO free and RoHS compliant
• HMP solder tinned leads available
• Electrically isolated flange
• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
• Screening options available
• High reliability
Applications
• Harsh environment motor drive
Figure 1: SMD 0.5
• Harsh environment regulators
Pad 1
Pad 3
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Surface mount
Pad 2
Figure 2: Circuit Diagram
• Other packaging options available
Absolute Maximum Ratings*
Symbols
Values
Units
DC Reverse Voltage
600
Volts
VRRM
Repetitive Peak Reverse Voltage
600
Volts
IF(AVG)
Average Forward Current
5
Amps
IFRM
Repetitive Peak Forward Current ( Tp=10ms, Half Sine Wave)
26.3
Amps
IFSM
Surge Peak Forward Current (Tp=10ms, Half Sine Wave )
45
Amps
PD
Total Power Dissipation
29.4
Watts
TJ
Junction Temperature Range
-55 to +210
o
Tstg
Storage Temperature Range
-55 to +210
o
Values
Units
VR
Parameters
C
C
Thermal Properties
Symbols
RθJC
March 2014 Rev 1.0
Parameters
Thermal Resistance, Junction To Case
6.3
o
C / Watt
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com
Silicon Carbide Schottky Diode
600 Volt 5 Amp Hermetic SMD
MYXDS0600-05DA0
Electrical Characteristics
Symbols
Parameters
VF
Forward Voltage
Typ
Max
IF = 5A, TJ = 25oC
1.6
1.8
IF = 5A, TJ = 210oC
2.2
3.0
VR = 600V, TJ = 25oC
10
100
VR = 600V, TJ = 210oC
30
300
VR = 600V, TJ = 25oC, IF = 1A, di/dt = 200 A/μs
17
VR = 0V, TJ = 25oC, f= 1MHz
340
VR = 200V, TJ = 25oC, f= 1MHz
40
VR = 400V, TJ = 25oC, f= 1MHz
30
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IR
Reverse Current
Qc
Total Capacitive Charge
C
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Test Conditions
Total Capacitance
Units
Volts
μAmps
nC
pF
 
 
 
   
yywwa = Date code and batch
yy = year
ww = week
a = batch
(Font and text colour is not representative of actual parts produced)
Figure 3: Package Dimensions
March 2014 Rev 1.0
2
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com
Silicon Carbide Schottky Diode
600 Volt 5 Amp Hermetic SMD
MYXDS0600-05DA0
y
r
a
in
* Absolute Maximum Ratings Disclaimer
Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress
ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions
for any duration may affect device reliability and operational life.
Document Title
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Silicon Carbide Schottky Diode 600 Volt 5 Amp Hermetic SMD MYXDS0600-05DA0
Revision History
Revision #
History
1.0
Initial release
March 2014 Rev 1.0
Release Date
March 2014
Status
Preliminary
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Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com