DDR Flyer.indd

219 PBGA iNTEGRATED
PLASTIC ENCAPSULATED
MICROCIRCUIT
2.4 Gb & 1.2 Gb SDRAM-DDR MCP iPEM
FEATURES
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Throughput = 200, 250, 266 & 333 MHz
Core Frequencies = 100, 125, 133 & 166 MHz
Impedance Controlled, Microcircuit Interposer
Core Supply Voltage = 2.5V +/- 0.2V
I/O Supply Voltage = 2.5V +/- 0.2V
Bi-directional Data Strobe (DQS) Per Byte
Pipeline Double Data Rate Architecture
Differential Input Clock
DLL on I/O for Data Alignment
Quad-Bank, Internal Architecture for Support of
Concurrent Operations
Data Mask Control (DM) for Masking WRITE
Data at Byte Level
Programmable IOH/IOL
Programmable Burst Length: 2, 4 or 8
Auto Precharge and Auto Refresh
Self Refresh Modes on Industrial and Enhanced product
BENEFITS:
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40+% Space Savings
34% Reduction in I/O
Reduction in Parts / Placement Count
100% Tested / Processed to:
~Industrial [IT] -40oC to 85oC
~Enhanced [ET] -40oC to 105oC
~Military [XT] -55oC to 125oC
• 100% DC / AC Tested
• One Package Footprint Across Multiple
Families / Densities
• Upgradeable
OPTIONS
AS4DDR32M72PBG
2.4 Gb, SDRAM-DDR, 32M x 72/80,
32mm x 25mm - 219 PGBA
AS4DDR16M72PBG
1.2 Gb, SDRAM-DDR, 16M x 72/80,
32mm x 25mm - 219 PGBA
APPLICATIONS
Examples include:
• Compact digital computing
~Digital radio
~Handheld GPS
~Secure communications systems
• Missile guidance & navigation
• Smart munitions
• Portable manpack designs where weight
& size is critical
w w w.m icross.com
MECHANICAL DEFINITIONS
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P
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M
L
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J
19.05
NOM
24.90
25.10
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G
F
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1.27
NOM
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A
(Bottom View)
219 x O 0.762 NOM
1.27 NOM
31.90
32.10
0.61 NOM
2.03 MAX
BLOCK DIAGRAM
SYSTEM BLOCK DIAGRAM
An Intel Single/Dual 80200 example
for SAN or NAS applications
Memory Bus
Micross Memory Solutions
SDRAM-DDR
16/32M x 72, 266Mbps
Intel 80314 – Fabric Centric
I/O Co-Processor
Intel 80200 –
Single or Dual
Core
ADDR
DATA
CONTRL
GigE (0)
GigE (1)
PCI-X
GPIO
For more information or to view a complete
datasheet, please visit our website at
www.micross.com or call (512) 339-1188.
Rev 6.0 06/10
Phone: 512.339.1188
semiconductors@micross.com
www.micross.com