1.2 Gb 219 PBGA SDRAM-SDR iPEM Flyer

219 PBGA iNTEGRATED
PLASTIC ENCAPSULATED
MICROCIRCUIT
1.2 Gb SDRAM-SDR MCP iPEM
FEATURES
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High Frequencies = 100, 125 and 133MHz
Core Supply Voltage = 3.3v +/- 0.3V
I/O Supply Voltage = 3.3V +/- 0.3V
Fully Synchronous, All Signals Registered on Rising CLK
Programmable Burst Mode (Sequential or Interleaved)
Programmable Burst Length: 1,2,4,8 or Full Page
Data Mask Per Byte
8,192 Cycle Refresh
Quad-Bank, Internal Architecture for Support of
Concurrent Operations
• Auto Precharge and Auto Refresh
• Self Refresh Modes on Industrial and Enhanced Product
• LVTTL Compatible Inputs and Outputs
BENEFITS:
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40+% Space Savings
19% Reduction in I/O
Reduction in Parts / Placement Count
100% Tested / Processed to:
~Industrial [IT] -40oC to +85oC
~Enhanced [ET] -40oC to +105oC
~Military [XT] -55oC to +125oC
• 100% DC / AC Tested
• One Package Footprint Across Multiple
Families / Densities
• Upgradeable
OPTIONS
AS4SD16M72PBG
1.2 Gb, SDRAM-SDR, 16M x 72/80,
32mm x 25mm - 219 PGBA
APPLICATIONS
Examples include:
• Compact digital computing
~Digital radio
~Handheld GPS
~Secure communications systems
• Missile guidance & navigation
• Smart munitions
• Portable manpack designs where weight
& size is critical
w w w.m icross.com
MECHANICAL DEFINITIONS
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N
M
L
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19.05
NOM
24.90
25.10
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G
F
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D
1.27
NOM
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A
(Bottom View)
219 x O 0.762 NOM
1.27 NOM
31.90
32.10
0.61 NOM
2.03 MAX
BLOCK DIAGRAM
For more information or to view a complete
datasheet, please visit our website at
www.micross.com or call (512) 339-1188.
Rev 6.0 06/10
SYSTEM BLOCK DIAGRAM
Phone: 512.339.1188
semiconductors@micross.com
www.micross.com