A MOSPEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators,converters,inverters,deflection stages and hig fidelity amplifiers. FEATURES: * Collector-Emitter Sustaining VoltageVCEO(SUS)=225-350V@IC=200mA *Usable DC Current Gain to 2.0A 2 AMPERES POWER TRANSISTOR PNP SILICON 225-350 VOLTS 35 WATTS MAXIMUM RATINGS Rating Symbol 2N6211 2N6212 2N6213 Unit Collector-Base Voltage VCBO 275 350 400 V Collector-Emitter Voltage VCEO 225 300 350 V Emitter-Base Voltage VEBO 6.0 V IC ICM 2.0 5.0 A IB 1.0 A PD 35 0.2 Watts o W/ C TJ , TSTG -65 to +200 Collector Current-Continuous Peak Base Current o Total Device Dissipation @ TC=25 C o Derate above 25 C Operating and Storage Junction Temperature Range o C THERMAL CHARACTERISTICS Characteristic Thermal Resistance to Case Symbol RθJC Max 5.0 Unit o TO-66 PIN 1.BASE 2.EMITTER COLLECTOR(CASE) C/W DIM PD, POWER ISSIPATION(WATTS) FIGURE-1 POWER DETATING TC, TEMPERATURE(℃) A B C D E F G H I J K MILLIMETERS MIN MAX 30.60 32.52 13.85 14.16 6.54 7.22 9.50 10.50 17.26 18.46 0.76 0.92 1.38 1.65 24.16 24.78 13.84 15.60 3.32 3.92 4.86 5.34 A A