S10C30

MOSPEC
S10C30 thru S10C60
Schottky Barrier Rectifiers
SCHOTTKY BARRIER
RECTIFIERS
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
10 AMPERES
30-60 VOLTS
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
TO-220AB
Flammability Classification 94V-O
＊ESD: 8KV(Min.) Human-Body Model
＊In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current ( Per doode )
Total Device (Rated VR), TC=125℃
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single
phase, 60Hz)
Operating and Storage Junction Temperature
Range
S10C
Symbol
Unit
30
35
40
45
50
60
VRRM
VRWM
VR
30
35
40
45
50
60
VR(RMS)
21
V
DIM
25
28
32
35
42
V
IF(AV)
5.0
10
A
IFM
10
A
125
A
-65 to +150
℃
IFSM
TJ , Tstg
ELECTRIAL CHARACTERISTICS
Characteristic
S10C
Symbol
30
Maximum Instantaneous Forward Voltage
( IF =5 Amp TC = 25℃)
( IF =5 Amp TC = 100℃)
Typical Thermal Resistance junction to case
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
VF
35
40
45
0.55
0.47
Unit
50
60
0.70
0.60
V
Rθ j-c
4.2
℃/w
IR
0.5
20
mA
A
B
C
D
E
F
G
H
I
J
K
L
M
O
MILLIMETERS
MIN
MAX
14.68
15.32
9.78
10.42
5.02
6.52
13.06
14.62
3.57
4.07
2.42
2.66
1.12
1.36
0.72
0.96
4.22
4.98
1.14
1.38
2.20
2.98
0.33
0.55
2.48
2.98
3.70
3.90
S10C30 Thru S10C60
NSTANTANEOUS FORWARD CURRENT (Amp.)
S10C30-S10C45
S10C50-S10C60
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
FIG-4 TYPICAL JUNCTION CAPACITANCE
o
Tj=100 c
o
Tj=75 c
o
Tj=25 c
PERCENT OF RATED REVERSE VOLTAGE (﹪)
FIG-5 PEAK FORWARD SURGE CURRENT
Device
PEAK FORWARD SURGE
CURRENT (Amp.)
FIG-2 TYPICAL FORWARD CHARACTERISITICS
NUMBER OF CYCLES AT 60 Hz
JUNCTION CAPACITANCE (PF)
INSTANTANEOUS REVERSE CURRENT (mA.)
AVERAGE FORWARD RECTIFIED CURRENT (Amp.)
FIG-1 FORWARD CURRENT DERATING CURVE
S10C30-S10C45
S10C50-S10C60
REVERSE VOLTAGE (Volts)