ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System VCC 26 V I K NP MAXIMUM DIM MINIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 E 300 mA J M MAXIMUM RATINGS IC F H .117 / 2.97 .110 / 2.79 F .117 / 2.97 G H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 PDISS 6.0 W @ TC ≤ 50 °C J L .003 / 0.08 .007 / 0.18 TJ -65 °C to +200 °C M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 TSTG -65 °C to +200 °C θJC 25 °C/W CHARACTERISTICS 1 = Collector 3 = Base ORDER CODE: ASI10534 TC = 25 °C NONETEST CONDITIONS SYMBOL 2 = Emitter BVCBO IC = 1 mA BVCER IC = 5 mA BVEBO IE = 1 mA ICBO VCB = 22 V hFE VCE = 5.0 V Cob VCB = 22 V PG ηC VCC = 22 V RBE = 10 Ω IC = 100 mA MINIMUM TYPICAL MAXIMUM 44 V 44 V 3.5 V 30 f = 1.0 MHz POUT = 2.0 W f = 2.3 GHz UNITS 9.5 33 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 300 --- 3.5 pF dB % REV. B 1/2 NOT FOUND. ASIERROR! REFERENCE SOURCE ASI2302 IMPEDANCE DATA TEST CIRCUIT A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2