VLB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System B .112 x 45° A E C Ø.125 NOM. FULL R J .125 E B C MAXIMUM RATINGS D IC 2.0 A VCBO 36 V VCES 36 V VEBO E F G 4.0 V H I DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 MAXIMUM C .720 / 18.29 .730 / 18.54 35 W @ TC = 25 °C D .970 / 24.64 .980 / 24.89 TJ -65 °C to +200 °C F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 TSTG -65 °C to +150 °C .240 / 6.10 .255 / 6.48 PDISS .385 / 9.78 E .280 / 7.11 I J θJC 5.0 °C/W CHARACTERISTICS ORDER CODE: ASI10732 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 15 mA 18 V BVCES IC = 50 mA 36 V BVEBO IE = 2.5 mA 4.0 V ICBO VCB = 15 V hFE VCE = 5.0 V COB VCB = 15 V PG ηC VCC = 12.5 V IC = 250 mA 5.0 f = 1.0 MHz POUT = 10 W f = 50 MHz 16 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 200 --- 65 pF dB % REV. A 1/1