MLN10005S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN10005S is Designed for UHF and Television Band IV & V Applications. PACKAGE STYLE .205 4L STUD FEATURES: D Common Emitter PG = 12 dB at 0.5 W/1.0 GHz Omnigold™ Metalization System Emitter Ballasting. A C B G E F H MAXIMUM RATINGS #8-32U N C IC 2.0 A VCBO 45 V VCEO 25 V VEBO J M IN IM U M D IM 3.5 V M AXIM U M inches / m m inches / m m A .976 / 24.800 1.000 / 25.4000 B .976 / 24.800 1.000 / 25.4000 C .028 / 0.700 .031 / 0.800 PDISS 31.8 W D E .161 / 4.100 TJ -55 °C to +200 °C F .098 / 2.500 .110 / 2.800 G .200 / 5.100 .208 / 5.300 TSTG -55 °C to +150 °C JC 33 °C/W CHARACTERISTICS SYMBOL TC = 25 °C NONETEST CONDITIONS .138 / 3.500 .196 / 5.000 H .004 / 0.100 .006 / 0.150 I .425 / 10.800 .465 / 11.800 J .200 / 5.100 2.05 / 5.200 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCEO IC = 20 mA 24 V BVEBO IE = 0.25 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V IC = 100 mA VCE = 20 V POUT = 0.5 W IC = 150 mA PG IMD1 15 f = 1.0 GHz 12 -58 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. 0.45 mA 120 --dB dBc REV.