S175-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S175-28 is a 28 V high power transistor designed for linear HF applications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: C E FULL R Ø.125 NOM. C B • PG = 14 dB min. at 175 W/30 MHz • IMD = -32 dBc max. at 175 W (PEP) • Omnigold™ Metalization System • Common Emitter configuration B E H VCES 60 V K DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM .125 / 3.18 B 30 A G F I J MAXIMUM RATINGS IC E D C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 E F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 320 W @ TC = 25 °C J .150 / 3.81 .175 / 4.45 TJ -65 °C to +200 °C L .980 / 24.89 1.050 / 26.67 TSTG -65 °C to +150 °C θJC 0.55 °C/W VEBO PDISS 3.5 V CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL .280 / 7.11 K MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 60 V BVCEO IC = 50 mA 33 V BVEBO IE = 10 mA 3.5 V hFE VCE = 5.0 V IC = 1.0 A 10 --- GP IMD ηC VSWR 14 VCE = 28 V PIN = 7.0 W POUT = 175 W (PEP) dB dBc % --- f = 30 MHz 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. -32 30:1 REV. A 1/1