MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF630 is Designed for UHF large signal, FM Land Mobile Applications up to 512 MHz. PACKAGE STYLE TO 205AD FEATURES: • Grounded Emitter • PG = 9.5 dB at 3.0 W/470 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 1.0 A VCEO 16 V VCES 36 V VEBO 4.0 V PDISS 8.75 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 20 °C/W CHARACTERISTICS MILLIMETERS MIN MAX INCHES MIN MAX A B C D E F G H J K L M P R 9.02 9.29 8.01 8.50 4.20 4.57 0.44 0.53 0.44 0.88 0.41 0.48 5.08 BSC 0.72 0.86 0.74 0.01 12.70 19.05 6.35 -45° BSC -1.27 2.54 -- 0.355 0.366 0.315 0.335 0.165 0.180 0.017 0.021 0.017 0.035 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.040 0.500 0.750 0.25 -45 °BSC -0.050 0.10 -- 1 = COLLECTOR 2 = BASE 3 = EMITTER TC = 25 °C NONETEST CONDITIONS SYMBOL DIM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 16 V BVCES IC = 50 mA 36 V BVEBO IE = 1.0 mA 4.0 V ICES VCE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V 1.0 IC = 100 mA 20 f = 1.0 MHz POUT = 3.0 W f = 470 MHz --8.0 9.5 10.8 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA 12 pF dB % REV. A 1/1