MRF581A NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF581A is Designed for High current low Power Amplifier Applications up to 1.0 GHz. Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 30 V VCEO 15 V VEBO 2.5 V PDISS 1.25 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C CHARACTERISTICS Leads 1 and 3 = Emitter 4 = Base TC = 25 °C NONETEST CONDITIONS SYMBOL 2 = Collector MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 30 V BVCEO IC = 5.0 mA 15 V BVEBO IE = 100 µA 2.5 V IEBO VEB = 2.0 V 100 µA ICBO VCB = 15 V 100 µA hFE VCE = 5.0 V 250 --- Ccb VCB = 10 V 3.0 pF GP VCC = 10 V IC = 50 mA 90 f = 1.0 MHz IC = 50 f = 0.5 GHz 2.0 13 15.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB REV. A 1/1