HVV1012-550 High Voltage, High Ruggedness L

FEATURES
!
GE
PACKAGE
Silicon MOSFET Technology
Operation from 24V to 50V
High Power Gain
Extreme Ruggedness
Internal Input and Output Matching
Excellent Thermal Stability
All Gold Bonding Scheme
Pb-free and RoHS Compliant
TYPICAL PERFORMANCE
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%.
DESCRIPTION
The high power HVV1012-550 device is an enhancement mode RF MOSFET power
transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The
high voltage MOSFET technology produces over 550W of pulsed output power while
offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical
device structure assures high reliability and ruggedness as the device is specified to
withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-550
Evaluation Kit Part Number: HVV1012-550-EK
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200
Specifications are subject to change without notice.
WWW.ADSEMI.COM
HVV1012-550 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1025-1150 MHz, 10µs Pulse, 1% Duty
!
For
Airborne DME Applications
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The innovative Semiconductor Company!
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ABSOLUTE MAXIMUM RATING (IEC 134)
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THERMAL/RUGGEDNESS PERFORMANCE
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The HVV1012-550 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at
rated output power and nominal operating voltage across the frequency band of operation.
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ELECTRICAL CHARACTERISTICS
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Typical performance at 1025MHz with an input power of 12W.
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HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS18A
07/15/2010
2
HVV1012-550 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1025-1150 MHz, 10µs Pulse, 1% Duty
!
For
Airborne DME Applications
!
!
!
PULSE CHARACTERISTICS
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Notes:
1) Rated at TCASE = 25°C
2) All parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with pulse width =
10µsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
3) Amount of gate voltage required to attain nominal quiescent current.
4) Guaranteed by design.
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS18A
07/15/2010
3
The innovative Semiconductor Company!
HVV1012-550 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1025-1150 MHz, 10µs Pulse, 1% Duty
For Airborne DME Applications
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width
and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1150MHz.
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width
and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1150MHz.
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
!!!!!!!!!!!!
EG-01-DS18A
07/15/2010
4
HVV1012-550 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1025-1150 MHz, 10µs Pulse, 1% Duty
!
For
Airborne DME Applications
!
The innovative Semiconductor Company!
!
!!!!!!!!!!!!
!
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width
and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W.
!
!!!!!!!!!!!!
Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width
and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W.
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
!
EG-01-DS18A
07/15/2010
5
The innovative Semiconductor Company!
HVV1012-550 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1025-1150 MHz, 10µs Pulse, 1% Duty
For Airborne DME Applications
Typical device performance under Class AB mode of operation at 1090MHz and RF pulse conditions of 10µs
pulse width and 1% duty cycle with VDD = 50 V and IDQ = 100mA. The high voltage silicon vertical
technology shows less than 1.5dB of power degradation over an extreme case teperature rise of 125°C.
Measured at P1dB Compression Point
TEMP
Gain (dB) Power (W) Power (dBm)
-40C
19.5
622
57.9
0C
18.9
695
58.4
25C
18.1
681
58.3
85C
15.7
561
57.5
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HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS18A
07/15/2010
6
The innovative Semiconductor Company!
HVV1012-550 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1025-1150 MHz, 10µs Pulse, 1% Duty
!
For
Airborne DME Applications
!
!
!
!
!
!
!
!
!
!
!
!
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!
!
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!!
!
!!!!!
Test Circuit Impedances
Frequency
Zin* (ohms)
Zout* (ohms)
1025MHz
0.95-j1.4
1.2-j2.8
1060MHz
0.97-j1.2
1.1-j2.5
1150MHz
1.1-j0.66
1.0-j1.9
Zin*
Zout*
Input
Output
Impedance
Matching Network
Impedance
Matching Network
HVVi Semiconductors, Inc.
st
10235 S. 51 St. Suite 100
Phoenix, Az. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2009 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS18A
07/15/2010
7
HVV1012-550 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1025-1150 MHz, 10µs Pulse, 1% Duty
For Airborne DME Applications
Demonstration Board Outline
Part
Description
Demonstration Circuit Board Picture
Part Number
C1, C2:
39 pF AVX 805 Chip Capacitor
712-1388-1-ND
C3,C7:
39 pF ATC 1210 100B Chip Capacitor
478-2646-1-ND
C4:
1K pF 100V Chip Capacitor (X7R 1206)
399-1222-2-ND
C5, C8:
10K pF 100V Chip Capacitor (X7R 1206) 399-1236-2-ND
C6:
10 uF 6V Tantalum SMD
478-3134-1-ND
C9, C10:
220 uF 63V Elect FK SMD
PCE3484TR-ND
R1:
470 Ohms Chip Resistor (1206)
311-470ERCT-ND
R2:
100 K Ohms Chip Resistor (1206)
311-100KERCT-ND
RF Connectors Type "N" RF connectors
5919CC-TB-7
DC Drain Conn Connector Jack Banana Nylon Red
J151-ND
DC Ground Conn.Connector Jack Banana Nylon Black
J152-ND
DC Gate Conn. Connector Jack Banana Nylon Green
J153-ND
PCB Board
PCB: 25 mils thick, 10.2 Dielectric, 1 oz Copper
Device Clamp
HV800 Package Nylon Clamp Foot
FXT000116
Heat Sink
Cool Innovations Aluminum Heat Sink
3-252510RS3411
S.S. Screws (4) 4-40 X 1/4 Stainless Steel Socket Hex Head
P242393
Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head
SCAS-0440-08C
Metal Washer (6) #4 Washer Zinc PLTD Steel Lock
ZSLW-004-M
Alloy Screws (2) 4-40 X 3/4 Alloy Socket Cap Screw Head SCAS-0440-12M
Manufacturer
Digi Key
Digi Key
Digi Key
Digi Key
Digi Key
Digi Key
Digi Key
Digi Key
Coaxicom
DIGI-KEY
DIGI-KEY
DIGI-KEY
DS Electronics
Cool Innovation
Cool Innovation
Copper State Bolt
Small Parts Inc
Small Parts Inc
Small Parts Inc
HVV1012-550 Demonstration Circuit Board Bill of Materials
PACKAGE DIMENSIONS
ASI
PART NUMBER
JDATE CODE
inches
mm
DRAIN
Note: Drawing is not actual size.
GATE
SOURCE
ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, ASI does not give any representations or warranties, either express or implied, as
to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed
under any ASI intellectual property rights, including any patent rights.