DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS Parameter Drain-Source Voltage Gate-Source Voltage IDSX PD2 TS Drain Current Power Dissipation Storage Temperature TJ Junction Temperature Value 95 -10 to +10 80 TBD -65 to +150 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol 1 JC Parameter Thermal Resistance Max TBD Unit °C/W The device utilizes a RoHS compliant flanged package with a ceramic lid. The HV1230 package style is qualified for gross leak test – MIL-STD-883, Method 1014. RUGGEDNESS The HV1011-1000L device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 1000W Max 20:1 Units VSWR F = 1030 MHz ELECTRICAL CHARACTERISTICS Symbol VBR(DSS) IDSS IGSS GP1 IRL1 1 D 1 PD BD1 1 2 Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Pulse Droop Burst Droop Conditions VGS=0V,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=1000W, F=1030 MHz POUT=1000W, F=1030 MHz POUT=1000W, F=1030 MHz POUT=1000W, F=1030 MHz POUT=1000W, F=1030 MHz Typ 102 <500 <10 15.5 10 50 <0.20 <0.20 Units V A A dB dB % dB dB Under Pulse Conditions: Pulse Width = 32 s on/18 s off x 48, repeat every 24ms with VDD=50V, IDQ=200mA Rated at TCASE = 25°C 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM >LL'&''#'&&&B '&&&MWjji"+&L"'&)&#'&/&C>p )(kied%'.kie\\n*.h[f[Wj[l[ho(*ci ! Typical device performance under Class AB mode of operation and RF signal conditions of 50!s pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. Typical device performance under Class AB mode of operation and RF burst conditions of 32!s on/18!s off x 48, repeated every 24ms with VDD = 50V and IDQ = 100mA. PACKAGE DIMENSIONS ASI PART NUMBER JDATE CODE inches mm DRAIN Note: Drawing is not actual size. GATE SOURCE ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.