DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature TJ Junction Temperature Value 95 -10, 10 2 116 -65 to +150 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol JC 1 Parameter Thermal Resistance Max 1.5 Unit °C/W The device resides in the SM200 surface mount package with a ceramic lid. RUGGEDNESS The HVV1011-035 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 35W Max 20:1 Units VSWR F = 1090 MHz ELECTRICAL CHARACTERISTICS Symbol VBR(DSS) IDSS IGSS GP1 IRL1 1 D 1 PD VGS(Q) VTH 1 2 Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Pulse Droop Gate Quiescent Voltage Threshold Voltage Conditions VGS=0V,ID=2mA VGS=0V,VDS=50V VGS=5V,VDS=0V POUT=35W, F=1090 MHz POUT=35W, F=1090 MHz POUT=35W, F=1090 MHz POUT=35W, F=1090 MHz VDD=50V, IDQ=15mA VDD=5V, ID=300uA Min 95 20 46 1.0 0.7 Typ 102 15 2 21.5 -12 48 0.3 1.4 1.2 Max 50 10 -8 0.5 1.7 1.7 Units V A A dB dB % dB V V Under Pulse Conditions: Pulse Width = 50 s, Pulse Duty Cycle = 5% at VDD = 50V, IDQ = 15mA Rated at TCASE = 25°C 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM 1 PACKAGE DIMENSIONS .205+/-.008 [5.21+/-0.20] 2X 0.45+/-.005 [1.13+/-0.13] DRAIN .175+/-.008 [4.45+/-0.20] .034+/-.005 [0.86+/-0.13] SOURCE 2X .020+/-.005 [0.51+/-0.13] GATE .007 [0.17] 3X .192+/-.005 [4.88+/-0.13] .088 +/- .008 .018 [0.45] INCHES [MM] Note: Drawing is not actual size. ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for consequences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights. 2