HF30-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28F is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L FLG B .112 x 45° A C E FEATURES: J .125 B • PG = 18 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System • POUT 30 W @ 30 MHz D 65 V VCEO E F I GH 4.5 A VCBO E C MAXIMUM RATINGS IC Ø.125 NOM. FULL R DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E 36 V F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 VEBO 4.0 V H .160 / 4.06 PDISS 80 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.2 °C/W CHARACTERISTICS .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10604 TC = 25 °C NONETEST CONDITIONS SYMBOL .180 / 4.57 .280 / 7.11 I MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 65 V BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V IC = 500 mA 10 f = 1.0 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 200 --- 65 pF REV. D 1/2 HF30-28F ERROR! REFERENCE SOURCE NOT FOUND. GP ηC IMD3 VCE = 28 V PIN = 0.48 W ICQ = 25 Ma POUT = 30 W f = 30 MHz 18 dB 60 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. -28 dBc REV. D 2/2