HF75-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-50S is 50 V Class AB NPN Power transistor, designed for SSB & VHF Communacations. PACKAGE STYLE .380” 4L STUD FEATURES INCLUDE: A .112x45° • Direct Replacement for TH513 • High Gain, 16 dB Typical @ 30 MHz • Withstands Server Mismatch • Omnigold™ Metalization System • 75 W POUT • 50 V OPERATIONS C B E E ØC B D H I J G #8-32 UNC-2A F E MAXIMUM RATINGS 3.25 A IC VCB 110 V VCE 55 V VEB 4.0 V PDISS 127 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 2.0 C/W MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 O O O O O MAXIMUM DIM .175 / 4.45 .750 / 19.05 J O CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 110 V BVCEO IC = 200 mA 55 V BVEBO IE = 10 mA 4.0 V hFE VCE = 6.0 V Cob VCB = 50 V GPE ηC IMD3 IC = 1.4 A 19 f = 1.0 MHz VCC = 50 V PIN = 3.0 W POUT = 75 W PEP f1 = 30.000 MHz, f2 = 30.001 MHz 50 --- 100 pF -30 dB % dBc 14 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1