VISHAY SIR462DP

SiR462DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.0079 at VGS = 10 V
30a
0.010 at VGS = 4.5 V
30a
• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
Qg (Typ.)
8.8 nC
APPLICATIONS
PowerPAK SO-8
S
6.15 mm
• High-Side Switch
• Server, VRM, POL
• DC/DC
5.15 mm
1
S
2
D
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
S
Ordering Information: SiR462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
L = 0.1 mH
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Limit
30
± 20
30a
30a
18.9b, c
15.1b, c
70
31
48
30a
4b, c
41.7
26.7
4.8b, c
3.1b, c
- 55 to 150
260
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
21
2.4
Maximum
26
3.0
Unit
°C/W
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
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1
SiR462DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
32
mV/°C
- 5.5
1
3
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
50
µA
A
VGS = 10 V, ID = 20 A
0.0065
0.0079
VGS = 4.5 V, ID = 14 A
0.0082
0.010
VDS = 15 V, ID = 20 A
70
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
1155
VDS = 15 V, VGS = 0 V, f = 1 MHz
td(off)
pF
95
VDS = 15 V, VGS = 10 V, ID = 20 A
20
30
8.8
14
3.5
VDS = 15 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 17 Ω
0.2
1.0
2.0
20
30
15
25
25
40
tf
10
15
td(on)
14
20
tr
td(off)
nC
2.2
td(on)
tr
260
VDD = 15 V, RL = 15 Ω
ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω
tf
9
15
25
40
9
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
30
70
IS = 4.0 A, VGS = 0 V
IF = 4.0 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
21
42
ns
15
30
nC
12.6
8.4
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68823
S-82771-Rev. C, 17-Nov-08
SiR462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
70
TC = - 55 °C
VGS = 10 thru 4 V
60
I D - Drain Current (A)
I D - Drain Current (A)
0.8
50
40
30
20
VGS = 3 V
TC = 25 °C
0.6
0.4
0.2
10
TC = 125 °C
0.5
1.0
1.5
0.0
0.0
2.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.012
1500
0.010
1200
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0.0
VGS = 4.5 V
0.008
VGS = 10 V
0.006
3.0
Ciss
900
600
Coss
0.004
300
0.002
0
Crss
0
10
20
30
40
50
60
0
70
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
30
1.7
ID = 20 A
ID = 20 A
VDS = 15 V
8
1.5
VDS = 7.5 V
6
VDS = 22.5 V
4
2
VGS = 10 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
1.3
VGS = 4.5 V
1.1
0.9
0
0
5
10
15
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
20
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiR462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
0.025
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
TJ = 150 °C
1
0.1
TJ = - 50 °C
0.01
0.001
0.0
0.020
0.015
TJ = 125 °C
0.010
0.005
TJ = 25 °C
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
150
0.2
120
Power (W)
VGS(th) Variance (V)
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.5
- 0.1
ID = 5 mA
90
60
ID = 250 µA
- 0.7
- 1.0
- 50
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
- 0.4
3
30
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
100 µs
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
100 s, DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68823
S-82771-Rev. C, 17-Nov-08
SiR462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
75
I D - Drain Current (A)
60
45
Package Limited
30
15
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
50
2.20
40
1.76
30
1.32
Power (W)
Power (W)
Current Derating*
20
10
0.88
0.44
0
0.00
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
www.vishay.com
5
SiR462DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68823.
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6
Document Number: 68823
S-82771-Rev. C, 17-Nov-08
Package Information
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Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
E3
Backside View of Dual Pad
MILLIMETERS
DIM.
MIN.
A
0.97
A1
b
0.33
c
0.23
D
5.05
D1
4.80
D2
3.56
D3
1.32
D4
D5
E
6.05
E1
5.79
E2 (for AL product)
3.30
E2 (for other product)
3.48
E3
3.68
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
0.56
H
0.51
L
0.51
L1
0.06

0°
W
0.15
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
b
D2
INCHES
NOM.
MAX.
MIN.
NOM.
MAX.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
1
0.246
0.236
0.144
0.151
0.154
0.028
0.028
0.008
12°
0.014
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
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15
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000