3N60 Series

3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(3A, 600Volts)
DESCRIPTION
The Nell 3N60 is a three-terminal silicon
device with current conduction capability
of 3A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
D
D
G
S
G
D
S
TO-251 (I-PAK)
(3N60F)
TO-252 (D-PAK)
(3N60G)
D
FEATURES
RDS(ON) = [email protected] = 10V
Ultra low gate charge(13nC max.)
Low reverse transfer capacitance
(C RSS = 5.5pF typical)
G
D
GD
S
Fast switching capability
100% avalanche energy specified
S
TO-220F
(3N60AF)
TO-220AB
(3 N60A )
Improved dv/dt capability
150°C operation temperature
D (Drain)
PRODUCT SUMMARY
ID (A)
3
VDSS (V)
600
RDS(ON) (Ω)
3.6 @ V GS = 10V
QG(nC) max.
13
G
(Gate)
S (Source)
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Page 1 of 9
3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
600
V DGR
Drain to Gate voltage
R GS =20KΩ
600
V GS
ID
Gate to Source voltage
UNIT
V
±30
T C =25°C
3
Continuous Drain Current
T C =100°C
1.86
A
I DM
Pulsed Drain current(Note 1)
I AR
Avalanche current(Note 1 )
E AR
Repetitive avalanche energy(Note 1 )
I AR =3A, R GS =50Ω, V GS =10V
7.5
E AS
Single pulse avalanche energy (Note 2 )
I AS =3A, L = 64mH
200
12
3
mJ
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-251/ TO-252
PD
Total power dissipation
50
T C =25°C TO-220AB
75
TO-220F
TJ
T STG
TL
V /ns
4.5
W
34
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
Maximum soldering temperature, for 10 seconds
ºC
300
1.6mm from case
Mounting torque, #6-32 or M3 screw
10 (1.1)
lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . I AS = 3 A, V DD = 50V, L = 64mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 3 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
PARAMETER
Thermal resistance, junction to case
Min.
Typ.
Max.
TO-251/ TO-252
2.5
TO-220AB
1.7
TO-220F
3.7
TO-251/TO-252
100
TO-220AB
62.5
TO-220F
62.5
UNIT
ºC/W
Rth(j-a)
Thermal resistance, junction to ambient
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Page 2 of 9
3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
PARAMETER
Drain to Source breakdown voltage
∆V (BR)DSS/ ∆T J Breakdown voltage temperature coefficient
I DSS
Drain to source leakage current
TEST CONDITIONS
I D =250µA,V GS =0V
Min.
Typ.
V
600
0.6
I D =250µA,V DS =V GS
V/°C
V DS =600V, V GS =0V T C =25°C
10.0
V DS =480V, V GS =0V T C =125°C
100
Gate to source forward leakage current
V GS =30V,V DS =0V
100
Gate to source reverse leakage current
V GS =-30V,V DS =0V
-100
R DS(ON)
Static drain to source on-state resistance
I D =1.5A,V GS =10V
V GS(TH)
Gate threshold voltage
V GS =V DS ,I D =250µA
I GSS
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
t d(ON)
t d(OFF)
tf
2.8
2.0
Ω
V
50
65
Reverse transfer capacitance
5.5
7.5
Turn-on delay time
10
30
30
70
20
50
30
70
10
13
Turn-off delay time
V DD =300V, V GS =10V,
I D =3A, R GS =25Ω (Note 1, 2)
Fall time
QG
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller cgarge)
V DD =480V,V GS =10V,
I D =3A (Note 1,2)
nA
4.0
450
V DS =25A, V GS =0V, f=1MHz
µA
3.6
350
Rise time
tr
UNIT
Max.
pF
ns
2.6
nC
5
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
PARAMETER
TEST CONDITIONS
Diode forward voltage
I SD = 3A, V GS = 0V
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
Min.
Typ.
Max.
UNIT
1.4
V
3
D (Drain)
I SM
12
Pulsed source current
A
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 3A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Page 3 of 9
210
ns
1.2
µC
3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
3
N 60
A
Current rating, ID
3 = 3A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T
(D.U.T.)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T.)
Body Diode Recovery dv/dt
V DD
Body Diode
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Page 4 of 9
Forward Voltage Drop
3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
V GS
Same Type as
D.U.T.
50kΩ
12V
0.2µF
QG
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
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Page 5 of 9
3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.2 Transfer characteristics
Fig.1 On-state characteristics
10
10
V GS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
1
7
6.5
Drain current, l D (A)
Drain Current, l D (A)
Top:
6
5.5
0.1
1
Notes:
1.250µs Pulse Test
2.T c =25°C
Notes:
1.V DS =50V
2.250µs Pulse Test
0.1
0.1
10
1
2
Fig.4 Reverse drain current vs.
source-drain voltage
Fig.3 On-resistance variation vs.
drain current and gate voltage
10
6
Reverse drain current, l SD (A)
Drain-source on-resistance, R DS(ON) (Ω)
10
8
Gate-source voltage, V GS (V)
Drain-to-source voltage, V DS (V)
5
4
V GS =20V
3
V GS =10V
2
1
1
Notes:
1.V GS =0V
2.250µs Test
Notes:T J =25°C
0
0
2
6
4
8
10
12
0.1
0.2
14
0.6
0.4
0.8
1.0
1.4
1.2
1.6
Drain current, I D (A)
Source to drain voltage, V SD (V)
Fig.5 Capacitance characteristics
(non-repetitive)
Fig.6 Gate charge characteristics
12
C ISS =C GS +C GD (C DS =shorted)
C OSS =C DS +C GD C RSS =C GD
500
C ISS
400
C OSS
300
Notes:
1.V GS =0V
2.f=1MHz
200
C RSS
100
Gate-source voltage, V GS (V)
600
Capacitance(pF)
6
4
1
10
V DS =120V
8
6
4
0
10
0
Drain-source voltage, V DS (V)
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V DS =480V
2
0
0.1
V DS =300V
2
4
6
8
Total gate charge, Q G (nC)
Page 6 of 9
10
3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.8 On-resistance variation vs.
junction temperature
3.0
1.2
Drain-source on-resistance, R DS(ON)
Drain -source breakdown voltage
variation, BV DSS
Fig.7 Breakdown voltage variation vs.
junction temperature
1.1
1.0
0.9
Note:
1.V GS =0V
2.I D =250µA
0.8
-100
-50
0
50
100
2.0
1.5
1.0
0.5
0.0
-100
200
150
2.5
Junction temperature, T J (°C)
-50
0
50
100
150
200
Junction temperature, T J (°C)
Fig.10 Maximum drain current vs.
case temperature
Fig.9 Transient thermal response curve
2.5
1
Drain current, l D (A)
Thermal response, R th(j-c) (t)
3.0
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single pulse
0.01
10 -5
Notes:
1.R th(j-c) =1.18°C/W Max.
2.Duty factor, D=t1/t2
3.T JM -Tc=P DM×R th(j-c) (t)
1.0
0.0
10 -4
10 -3
10 -2
10 0
10 -1
10 1
25
Operation in This Area is Limited by RDS(on)
10 1
100µs
1ms
10ms
10 0
DC
Notes:
1.T J =25°C
2.T J =150°C
3.Single pulse
10 -2
10 0
10 1
10 2
600
10 3
Drain to Source voltage, V DS (V)
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50
75
100
125
Case temperature, T C (°C)
Fig.11 Safe operating area - 600V
Drain current,I D (A)
1.5
0.5
Square wave pulse duration, t 1 (SEC)
10 -1
2.0
Page 7 of 9
150
3N60 Series
SEMICONDUCTOR
Nell High Power Products
Case Style
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
0.62(0.024)
0.48(0.019)
1.37(0.054)
5.2(0.204)
6.2(0.244)
6(0.236)
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
1
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
3
2
0.89(0.035)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
0.62(0.024)
0.45(0.017)
4.57(0.180)
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
D (Drain)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
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Page 8 of 9
RoHS
RoHS
3N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-220F
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
D (Drain)
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 9 of 9