NKFD200-40 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FRED Ultrafast Soft Recovery Diode Module, 200 A FEATURES Very low Q rr and t rr Lead (Pb)-free Designed and qualified for industrial level Reduced RFI and EMI Reduced snubbing DESCRIPTION TO-244 (non-insulated) FRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dl/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. Lug terminal anode 1 TO-244 (insulated) Lug terminal anode 2 Lug terminal common cathode Lug terminal anode 1 Lug terminal anode 2 Base common cathode TYPICAL APPLICATIONS Power converters Motor drives Welders *Add suffix R for common anode Switching power supplies PRODUCT SUMMARY I F(AV) 200A VR 400V I F(DC) at T C 160A at 100 °C ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR T C =25°C, per device MAX. UNIT 400 V 315 Average forward current IF(AV) DC forward current IF(DC) T C =100°C 160 Single pulse forward current l FSM Limited by junction temperature, per leg 1400 Non-repetitive avalanche energy E AS L = 100 μΗ, duty cycle limited by maximum T J 1.4 Maximum power dissipation PD T C =25°C 658 T C =100°C 263 Operating junction and storage temperature range www.nellsemi.com T J , T Stg Page 1 of 7 T C =120°C per device 200 per leg 100 - 55 to 150 A mJ W °C RoHS RoHS NKFD200-40 Series SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL PARAMETER Cathode to anode breakdown voltage VBR Maximum forward voltage VFM TEST CONDITIONS UNIT MIN. TYP. MAX. 400 - - IF = 100 A - 1.10 1.25 IF = 200 A - 1.30 1.40 IF = 100 A, TJ = 125 ºC - 1.0 1.15 T J = 125°C, V R = 400V - 0.6 5.0 mA T J = 25°C, V R = 400V - 5.0 50 µA IR = 100 µA V Maximum reverse leakage current per leg IRM Junction capacitance CT V R = 200V - 280 380 pF Series inductance LS From top of terminal hole to mounting plane - 6.0 - nH 50Hz - - Maximum RMS insulation voltage (for insulated type) VINS 3000(1min) V 3600(1s) DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 ºC unless otherwise specified) SYMBOL PARAMETER Reverse recovery time t rr Peak recovery current l RRM TEST CONDITIONS MIN. TYP. MAX. I F = 0.5A, I R = 1.0A, I RR = 0.25A - 60 75 I F = 1.0A, dl F /dt=200A/μs, V R = 30V - 50 - TJ = 25 ºC - 77 120 TJ = 125 ºC - 290 440 TJ = 25 ºC - 7.5 14 - 16 30 IF= 140A dIF/dt = 200 A/µs VR = 200 V TJ = 125 ºC TJ = 25 ºC UNIT ns A - 290 780 TJ = 125 ºC - 2300 3600 TJ = 25 ºC - 320 - TJ = 125 ºC - 270 - SYMBOL MIN. TYP. MAX. UNIT T J, T stg -55 - 150 ºC - - 0.19 - - 0.28 - - 0.095 - - 0.14 - 0.10 - TO-244 (non-insulated) - 80 (2.82) - TO-244 (insulated) - 95 (3.36) - Mounting torque (1) 30 (3.4) - 40 (4.6) Mounting torque center hole 12 (1.4) - 18 (2.1) Terminal torque 30 (3.4) - 40 (4.6) Vertical pull - - 80 2” lervr pull - - 35 Reverse recovery charge Peak rate of recovery current Q rr dl (rec)M /dt nC A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to case per module TO-244 (non-insulated) R thJC TO-244 (insulated) TO-244 (non-insulated) ºC/W R thJC TO-244 (insulated) Typical thermal resistance, case to heatsink R thCS Weight g (oz.) lbf . in (N . m) lbf . in Note (1)Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5 to 10 lbf. in steps until desired or maximum torque limits are reached www.nellsemi.com Page 2 of 7 NKFD200-40 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Ordering Information Tabel Device code NK F D 200 1 2 3 4 - 40 R I 5 6 7 1 - Nell's power module 2 - F for Ultrafast soft recovery diode 3 - D for Dual Diodes, TO-244 Package 4 - Maximum average forward current, A 5 - Voltage rating (40 = 400V) 6 - None for common cathode configuration "R" for common anode configuration 7 - None for non-insulated type " I " for insulated type Fig.2 Typical reverse current vs. reverse voltage (per leg) 10000 1000 T J =150°C Reverse current, l R (μA) lnstantaneous forward current, I F (A) Fig.1 Maximum forward voltage drop vs. lnstantaneous forward current (per leg) 100 T J =150°C T J =125°C T J =25°C 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 T J =125° C 100 10 T J =25 °C 1 0.1 100 2.0 200 300 400 Forward voltage drop, V FM (V) Reverse voltage, V R (V) Fig.3 Typical junction capacitance vs. reverse voltage (per leg) Fig.4 Maximum allowable case temperature vs. DC forward current (per leg) 10000 160 1000 Maximum allowable case temperature ( ° C) Junction capacitance, C T (pF) 1000 T J =25 °C 100 140 120 100 DC 80 60 40 20 0 1 10 100 1000 0 200 300 DC forward current, l F(AV) (A) Reverse voltage, V R (V) www.nellsemi.com 100 Page 3 of 7 400 NKFD200-40 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Typical recovery current vs. dl F /dt (per leg) Fig.5 Typical reverse recovery time vs. dl F /dt (per leg) 450 70 T J =125°C T J =25°C 400 350 lF = 200A l F =120A l F =5 0 A T J =125°C T J =25°C 50 l RRM (A) 300 t rr (ns) 60 250 200 150 lF = 200A l F =120A l F =5 0 A 40 30 20 100 10 50 0 100 0 100 1000 1000 dl F /dt(A/ µ s) dl F /dt(A/ µ s) Fig.8 Typical dl (rec)M /dt vs. dl F /dt (per leg) Fig.7 Typical stored charge vs. dl F /dt (per leg) 10000 6000 Q rr (nC) 4000 dl (rec)M /dt (A/ µ s) 5000 T J =125°C T J =25°C lF = 200A l F =120A l F =5 0 A 3000 2000 200A 120A 50 A 1000 1000 T J =125°C T J =25°C 0 100 100 100 1000 1000 dl F /dt(A/ µ s) dl F /dt(A/ µ s) Fig.9-1 Maximum thermal impedance R th(j-c) characteristics (per leg, for TO-244 non-insulated) Thermal response , R th(j-c) 1 0.1 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 0.1 Rectangular pulse duration, t 1 (s) www.nellsemi.com Page 4 of 7 1 10 NKFD200-40 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9-2 Maximum thermal impedance R th(j-c) characteristics (per leg, for TO-244 insulated) Thermal response , R th(j-c) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular pulse duration, t 1 (s) Fig.10 Reverse recovery parameter test circuit V R =200V 0.01Ω L=70µH D.U.T. dl F /dt adjust D G IRFP250 S Fig.11 Reverse recovery waveform and definitions (3) t rr IF ta tb 0 Q rr (2) l RRM (4) 0.5 l RRM dl (rec)M /dt (5) 0.75 l RRM (1) dl F /dt (1) dl F /dt - rate of change of current through zero crossing (2) l RRM - peak reverse recovery current (4) Q rr - area under curve defined by t rr and l RRM Qrr = t rr xl RRM 2 (3) t rr - reverse recovery time measured from zero crossing point of negative (5) dl (rec)M /dt - peak rate of change of current during t b portion of t rr going l F to point where a line passing through 0.75 l RRM and 0.50 l RRM extrapolated to zero current. www.nellsemi.com Page 5 of 7 1 10 NKFD200-40 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.12 Avalanche test circuit and waveforms l L(PK) L=100µH High-speed switch D.U.T. R G =25Ω Freewheel diode Current monitor Decay time + V (AVAL) V d =50V V R(RATED) TO-244 (Non-Insulated) 35.0 2-Φ7.2 3 3 2 1 Φ5.2 80.0 16.8 7.0 15.0 2-1/4" 20 UNC SCREWS 64 21.0 93 All dimensions in millimeters www.nellsemi.com Page 6 of 7 NKFD200-40 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TO-244 (Insulated) 23.0 23.0 2-Φ7.2 1 3 2 80.0 16.8 7.0 15.0 3-1/4" 20 UNC SCREWS 67 21.0 93 All dimensions in millimeters www.nellsemi.com Page 7 of 7