IRF150 Series

IRF150 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
42A, 100Volts
DESCRIPTION
D
The Nell IRF150 is a three-terminal silicon device
with current conduction capability of 42A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 100V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
motor control circuits, UPS and general purpose
switching applications.
G
G
D
S
D
S
TO-3PB
(IRF150B)
TO-247AB
(IRF150C)
D (Drain)
FEATURES
RDS(ON) = 0.055Ω @ VGS = 10V
G
(Gate)
Ultra low gate charge(110nC Max.)
Low reverse transfer capacitance
(C RSS = 230pF typical)
S (Source)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
PRODUCT SUMMARY
ID (A)
42
VDSS (V)
100
RDS(ON) (Ω)
0.055 @ V GS = 10V
QG(nC) max.
110
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
100
V DGR
Drain to Gate voltage
R GS =20KΩ
100
V GS
ID
Gate to Source voltage
UNIT
V
±20
Continuous Drain Current (V GS =10V)
T C =25°C
42
T C =100°C
30
A
I DM
Pulsed Drain current(Note 1)
I AR
Avalanche current(Note 1)
E AR
Repetitive avalanche energy(Note 1)
l AR =22A, R GS =50Ω, V GS =10V
E AS
Single pulse avalanche energy(Note 2)
l AS =22A, L =1.7mH
160
22
16
mJ
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
TJ
T STG
TL
T C =25°C
Derate above 25 ° C
5.0
V /ns
160
W
1.1
W /°C
Operation junction temperature
-55 to 175
Storage temperature
-55 to 175
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
Page 1 of 7
ºC
300
10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . l AS =22 A, L =1.7 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C.
3 . I SD ≤ 22 A, di/dt ≤ 180 A/µs, V DD ≤ V (BR)DSS , starting T J < 150 °C.
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420
lbf . in (N . m)
IRF150 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heat sink
Rth(j-a)
Thermal resistance, junction to ambient
MIN.
TYP.
MAX. UNIT
0.95
ºC/W
0.24
40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
MIN.
TYP.
MAX.
UNIT
STATIC
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
Drain to source breakdown voltage
I D = 250μA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 1mA, V DS =V GS
Drain to source leakage current
100
V
V/ºC
0.11
V DS =100V, V GS =0V
T C = 25°C
25.0
V DS =80V, V GS =0V
T C =125°C
250
μA
Gate to source forward leakage current
V GS = 20V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -20V, V DS = 0V
-100
R DS(ON)
Static drain to source on-state resistance
I D = 25A, V GS = 10V
0.055
Ω
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
2.0
4.0
V
Forward transconductance
V DS = 25V, l D = 25A
13
I GSS
g fs
nA
S
DYNAMIC
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
t d(ON)
Turn-on delay time
tr
t d(OFF)
tf
QG
Rise time
Turn-off delay time
1900
V DS = 25V, V GS = 0V, f =1MHz
pF
450
230
11
V DD = 50V, V GS = 10V
I D = 22A, R G = 3.6Ω, R D = 2.9Ω
(Note1,2)
56
ns
45
Fall time
40
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
LD
Internal drain inductance
LS
Internal source inductance
110
V DD = 80V, V GS = 10V
I D = 22A, (Note1,2)
15
nC
58
5
Between lead, 6mm(0.25”) form
package and center of die contact
nH
13
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
TEST CONDITIONS
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
Diode forward voltage
I SD = 42A, V GS = 0V
2.5
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
42
D (Drain)
A
I SM
Pulsed source current
160
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 42A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Page 2 of 7
220
330
ns
1.9
2.9
μC
IRF150 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
IRF
150
B
MOSFET series
N-Channel,IRF series
Current and Voltage rating, ID & VDS
42A / 100V
Package type
B = TO-3PB
C = TO-247AB
■ TYPICAL CHARACTERISTICS
Fig.2 Typical output characteristics,
T C =175°C
Fig.1 Typical output characteristics,
T C =25°C
1000
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
100
Drain Current, I D (A)
Drain Current, l D (A)
1000
10
4.5V
4.5V
1
100
10
1
0.1
10
Note:
1. 20µs Pulse Test
2. T C = 175°C
Note:
1. 20µs Pulse Test
2. T C = 25°C
1
100
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
1
0.1
100
10
Drain-Source voltage, V DS (V)
Drain-Source voltage, V DS (V)
Fig.4 Normalized On-Resistance vs. Temperature
Fig.3 Typical transfer characteristics
3.0
100
Drain-Source On-Resistance,
R Ds(ON) (Normalized)
Drain current, l D (A)
1000
T J =25 ºC
T J =175ºC
10
1
4
5
6
7
8
9
2.0
1.5
1.0
0.5
I D = 36A
V GS = 10V
0.0
-60 -40 -20
10
0
20 40
60 80 100 120 140 160
Junction temperature, T j (°C)
Gate-Source voltage, V GS (V)
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2.5
Page 3 of 7
IRF150 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
Fig.6 Typical source-drain diode forward
voltage
3500
1000
Capacitance (pF)
3000
Reverse drain current,I SD (A)
V GS = 0V, f = 1MHz
C iss = C gs +C gd ( C ds shorted )
C oss = C ds +C gd
C rss = C gd
2500
C iss
2000
1500
1000
C oss
500
C rss
100
10
1
V GS = 0V
0.1
0
0.2
100
10
1
Drain- Source voltage, V SD (V)
1.0
1.2
1.4
1.6
Fig.8 Maximum safe operating area
1000
20
Operation in This Area is Limited by R DS(ON)
V DS = 80V
16
V DS = 50V
Drain current, l D (A)
Gate-Source voltage, V GS (V)
0.8
0.6
Source- Drain voltage, V SD (V)
Fig.7 Typical gate charge vs. gate-to-source
voltage
V DS = 20V
12
8
100
10µs
100µs
10
1ms
Note:
1. T C = 25°C
2. T J = 175°C
3. Single Pulse
4
I D = 22 A
10ms
1
0
20
0
40
60
80
100
120
Total gate charge, Q G (nC)
50
40
30
20
10
0
25
50
75
100
125
150
175
Case temperature, T C (°C)
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1
10
100
Drain-source voltage, V DS (V)
Fig.9 Maximum drain current vs.
Case temperature
Drain current, l D (A)
0.4
Page 4 of 7
1000
IRF150 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Thermal response R th(J-C) (t)
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
10
1
D ~ 0.5
PDM
0.2
t1
0.1
0.05
0.02
0.01
0.1
t2
Single pulse
(Thermal response)
0.01
0.00001
0.0001
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.01
0.001
1
0.1
Rectangular pulse duration, t 1 (S)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
RD
V DS
V DS
90%
V GS
RG
D.U.T.
+
- V DD
10V
V GS
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
10%
t d(ON)
t d(OFF)
tR
Fig.12a. Unclamped lnductive test circuit
tF
Fig.12b. Unclamped lnductive waveforms
15V
BV DSS
L
V DS
DRIVER
l AS
l D(t)
RG
D.U.T.
l AS
+
V
- DD
V DS(t)
V DD
A
20V
tP
0.01Ω
Time
tp
Vary t p to obtain required I AS
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IRF150 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.12c. Maximum avalanche energy vs.
Drain current
Single pulse energy, E AS (mJ)
1000
lD
9.0A
16A
BOTTOM 22A
TOP
800
600
400
200
0
25
75
50
100
125
175
150
Starting Junction temperature, T J (°C)
Fig.13a. Basic gate charge waveform
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
V GS
50KΩ
QG
0.2µF
12V
10V
0.3µF
+
Q GD
Q GS
D.U.T.
V GS
3mA
RG
Charge
RD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
Driver Gate Drive
+
Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
P.W.
D=
Period
P.W.
Period
VGS=10V
-
*
D.U.T. I SD Waveform
+
-
-
RG
Reverse
Recovery
Current
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
l SD controlled by Duty Factor " D "
D.U.T. -Device Under Test
Re-Applied
Voltage
+
-
V DD
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*V GS = 5V for Logic Level Devices and 3V for drive devices
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Page 6 of 7
-
V DS
IRF150 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
1.8
4.8±0.2
2.0±0.1
4.0
19.9±0.3
2.0
15.6±0.4
9.6
5.0 ±0 . 2
TO-3PB
2
4.0 max
20.0 min
Φ3.2 ± 0,1
3
5.45±0.1
G
D
S
1
2
3
+0.2
1.05 -0.1
+0.2
0.65 -0.1
5.45±0.1
1.4
D (Drain)
G
(Gate)
All dimensions in millimeters(inches)
S (Source)
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
Drain
5.38 (0.212)
6.20 (0.244)
16.15 (0.242)
3.55 (0.138)
3.81 (0.150)
G
4.50 (0.177)Max
D
S
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
(TYP.)
2.13 (0.084)
19.81 (0.780)
20.32 (0.800)
0.40 (0.016)
0.79 (0.031)
1.01 (0.040)
1.40 (0.055)
(TYP.)
5.45 (0.215)
5.45 (0.215)
2.21 (0.087)
2.59 (0.102)
D (Drain)
All dimensions in millimeters(inches)
G
(Gate)
S (Source)
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Page 7 of 7