2N60 Series

2N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(2A, 600Volts)
DESCRIPTION
The Nell 2N60 is a three-terminal silicon
device with current conduction capability
of 2A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
D
D
G
S
G
D
S
TO-251 (I-PAK)
(2N60F)
TO-252 (D-PAK)
(2N60G)
D
FEATURES
RDS(ON) = [email protected] = 10V
Ultra low gate charge(11nC max.)
Low reverse transfer capacitance
(C RSS = 5pF typical)
G
D
GD
S
Fast switching capability
100% avalanche energy specified
S
TO-220F
(2N60AF)
TO-220AB
(2 N60A )
Improved dv/dt capability
150°C operation temperature
D (Drain)
PRODUCT SUMMARY
ID (A)
2
VDSS (V)
600
RDS(ON) (Ω)
5.0 @ V GS = 10V
QG(nC) max.
11
G
(Gate)
S (Source)
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Page 1 of 8
2N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
600
V DGR
Drain to Gate voltage
R GS =20KΩ
600
V GS
ID
Gate to Source voltage
UNIT
V
±30
T C =25°C
2
Continous Drain Current
T C =100°C
1.24
A
I DM
Pulsed Drain current(Note 1)
8
I AR
Avalanche current(Note 1 )
2
E AR
Repetitive avalanche energy(Note 1 )
I AR =2A, R GS =50Ω, V GS =10V
4.5
E AS
Single pulse avalanche energy (Note 2 )
I AS =2A, L = 64mH
140
mJ
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-251/ TO-252
PD
Total power dissipation
44
T C =25°C TO-220AB
54
TO-220F
TJ
T STG
TL
V /ns
4.5
W
23
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
Maximum soldering temperature, for 10 seconds
1.6mm from case
ºC
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . I AS = 2 A, V DD = 50V, L = 64mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 2.4 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C.
THERMAL RESISTANCE
SYMBOL
PARAMETER
Min.
TO-251/ TO-252
Rth(j-c)
Thermal resistance, junction to case
TO-220AB
Typ.
Max.
UNIT
2.9
2.35
TO-220F
5.5
TO-251/TO-252
100
TO-220AB
62.5
TO-220F
62.5
ºC/W
Rth(j-a)
Thermal resistance, junction to ambient
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Page 2 of 8
2N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
PARAMETER
Drain to Source breakdown voltage
∆V (BR)DSS /∆T J Breakdown voltage temperature coefficient
I DSS
Drain to source leakage current
TEST CONDITIONS
I D =250µA,V GS =0V
Min.
Typ.
Max.
V
600
V/°C
0.4
I D =250µA,V DS =V GS
V DS =600V, V GS =0V T C =25°C
V DS =480V, V GS =0V
10
µA
100
T C =125°C
Gate to source forward leakage current
V GS =30V,V DS =0V
100
Gate to source forward leakage current
V GS =-30V,V DS =0V
-100
R DS(ON)
Static drain to source on-state resistance
I D =1.0A,V GS =10V
V GS(TH)
Gate threshold voltage
V GS =V DS ,I D =250µA
I GSS
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
t d(ON)
t d(OFF)
tf
2.0
Ω
4
V
350
40
50
Reverse transfer capacitance
5.5
7
Turn-on delay time
10
30
25
60
20
50
25
60
9
11
Turn-off delay time
V DD =300V, V GS =10V,
I D =2.4A, R GS =25Ω (Note 1, 2)
Fall time
QG
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller cgarge)
V DD =480V,V GS =10V,
I D =2.4A (Note 1,2)
nA
5
270
Rise time
tr
3.5
V DS =25A, V GS =0V, f=1MHZ
UNIT
pF
ns
1.5
uC
4.5
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
PARAMETER
TEST CONDITIONS
Diode forward voltage
I SD = 2A, V GS = 0V
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
Min.
Typ.
Max.
UNIT
1.4
V
2
D (Drain)
I SM
8
Pulsed source current
A
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 2.4A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Page 3 of 8
180
ns
0.7
µC
2N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
2
N 60
A
Current rating, ID
2 = 2A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver.)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T.)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T.)
Body Diode Recovery dv/dt
V DD
Body Diode
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Page 4 of 8
Forward Voltage Drop
2N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
V GS
Same Type as
D.U.T.
50kΩ
12V
0.2µF
QG
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
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Page 5 of 8
2N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.2 Drain current vs. gate threshold
voltage
300
300
250
250
Drain current, l D (µA)
Drain Current, l D (µA)
Fig.1 Drain current vs. Drain-source breakdown
voltage
200
150
100
200
150
100
50
50
0
0
0
200
400
600
800
0
1000
Fig.3 Drain-source on-state resistance
characteristics
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
Drain to source voltage, V DS (V)
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1.5
2
2.5
3
3.5
4
Fig.4 Drain current vs. source-drain
voltage
Continuous source-drain current, l SD (A)
Drain Current,I D (A)
1.0
1
Gate threshold voltage, V GS(TH) (V)
Drain-source breakdown voltage, BV DSS (V)
1.2
0.5
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
Source to drain voltage, V SD (V)
Page 6 of 8
1.2
2N60 Series
SEMICONDUCTOR
Nell High Power Products
Case Style
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
0.62(0.024)
0.48(0.019)
1.37(0.054)
5.2(0.204)
6.2(0.244)
6(0.236)
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
1
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
3
2
0.89(0.035)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
0.62(0.024)
0.45(0.017)
4.57(0.180)
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
D (Drain)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
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Page 7 of 8
RoHS
RoHS
2N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-220F
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
D (Drain)
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 8 of 8