2N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET (2A, 600Volts) DESCRIPTION The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. D D G S G D S TO-251 (I-PAK) (2N60F) TO-252 (D-PAK) (2N60G) D FEATURES RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (C RSS = 5pF typical) G D GD S Fast switching capability 100% avalanche energy specified S TO-220F (2N60AF) TO-220AB (2 N60A ) Improved dv/dt capability 150°C operation temperature D (Drain) PRODUCT SUMMARY ID (A) 2 VDSS (V) 600 RDS(ON) (Ω) 5.0 @ V GS = 10V QG(nC) max. 11 G (Gate) S (Source) www.nellsemi.com Page 1 of 8 2N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 600 V DGR Drain to Gate voltage R GS =20KΩ 600 V GS ID Gate to Source voltage UNIT V ±30 T C =25°C 2 Continous Drain Current T C =100°C 1.24 A I DM Pulsed Drain current(Note 1) 8 I AR Avalanche current(Note 1 ) 2 E AR Repetitive avalanche energy(Note 1 ) I AR =2A, R GS =50Ω, V GS =10V 4.5 E AS Single pulse avalanche energy (Note 2 ) I AS =2A, L = 64mH 140 mJ dv/dt Peak diode recovery dv/dt(Note 3) TO-251/ TO-252 PD Total power dissipation 44 T C =25°C TO-220AB 54 TO-220F TJ T STG TL V /ns 4.5 W 23 Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds 1.6mm from case ºC 300 Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . I AS = 2 A, V DD = 50V, L = 64mH, R GS = 25Ω, starting T J =25°C. 3 . I SD ≤ 2.4 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C. THERMAL RESISTANCE SYMBOL PARAMETER Min. TO-251/ TO-252 Rth(j-c) Thermal resistance, junction to case TO-220AB Typ. Max. UNIT 2.9 2.35 TO-220F 5.5 TO-251/TO-252 100 TO-220AB 62.5 TO-220F 62.5 ºC/W Rth(j-a) Thermal resistance, junction to ambient www.nellsemi.com Page 2 of 8 2N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL V(BR)DSS PARAMETER Drain to Source breakdown voltage ∆V (BR)DSS /∆T J Breakdown voltage temperature coefficient I DSS Drain to source leakage current TEST CONDITIONS I D =250µA,V GS =0V Min. Typ. Max. V 600 V/°C 0.4 I D =250µA,V DS =V GS V DS =600V, V GS =0V T C =25°C V DS =480V, V GS =0V 10 µA 100 T C =125°C Gate to source forward leakage current V GS =30V,V DS =0V 100 Gate to source forward leakage current V GS =-30V,V DS =0V -100 R DS(ON) Static drain to source on-state resistance I D =1.0A,V GS =10V V GS(TH) Gate threshold voltage V GS =V DS ,I D =250µA I GSS C ISS Input capacitance C OSS Output capacitance C RSS t d(ON) t d(OFF) tf 2.0 Ω 4 V 350 40 50 Reverse transfer capacitance 5.5 7 Turn-on delay time 10 30 25 60 20 50 25 60 9 11 Turn-off delay time V DD =300V, V GS =10V, I D =2.4A, R GS =25Ω (Note 1, 2) Fall time QG Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller cgarge) V DD =480V,V GS =10V, I D =2.4A (Note 1,2) nA 5 270 Rise time tr 3.5 V DS =25A, V GS =0V, f=1MHZ UNIT pF ns 1.5 uC 4.5 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) PARAMETER TEST CONDITIONS Diode forward voltage I SD = 2A, V GS = 0V Continuous source to drain current Integral reverse P-N junction diode in the MOSFET Min. Typ. Max. UNIT 1.4 V 2 D (Drain) I SM 8 Pulsed source current A G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 2.4A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 3 of 8 180 ns 0.7 µC 2N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 2 N 60 A Current rating, ID 2 = 2A MOSFET series N = N-Channel Voltage rating, VDS 60 = 600V Package type A = TO-220AB AF = TO-220F F = TO-251(I-PAK) G = TO-252(D-PAK) ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver.) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T.) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T.) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 4 of 8 Forward Voltage Drop 2N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) t d(OFF) tR Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RG V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp www.nellsemi.com Page 5 of 8 2N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.2 Drain current vs. gate threshold voltage 300 300 250 250 Drain current, l D (µA) Drain Current, l D (µA) Fig.1 Drain current vs. Drain-source breakdown voltage 200 150 100 200 150 100 50 50 0 0 0 200 400 600 800 0 1000 Fig.3 Drain-source on-state resistance characteristics 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 Drain to source voltage, V DS (V) www.nellsemi.com 1.5 2 2.5 3 3.5 4 Fig.4 Drain current vs. source-drain voltage Continuous source-drain current, l SD (A) Drain Current,I D (A) 1.0 1 Gate threshold voltage, V GS(TH) (V) Drain-source breakdown voltage, BV DSS (V) 1.2 0.5 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 Source to drain voltage, V SD (V) Page 6 of 8 1.2 2N60 Series SEMICONDUCTOR Nell High Power Products Case Style TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 0.62(0.024) 0.48(0.019) 1.37(0.054) 5.2(0.204) 6.2(0.244) 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 0.62(0.024) 0.48(0.019) 1.37(0.054) 2 1 6.2(0.244) 6(0.236) 9.35(0.368) 10.1(0.397) 3 2 0.89(0.035) 0.64(0.025) 1.14(0.045) 0.76(0.030) 2.28(0.090) 0.62(0.024) 0.45(0.017) 4.57(0.180) TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) D (Drain) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) 0.56 (0.022) 0.36 (0.014) G (Gate) S (Source) All dimensions in millimeters(inches) www.nellsemi.com Page 7 of 8 RoHS RoHS 2N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-220F 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 8 of 8