50N06 Series

50N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(50A, 60Volts)
DESCRIPTION
The Nell 50N06 is a three-terminal silicon
device with current conduction capability
of 50A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
D
D
G
S
They are designed for use in applications
such as switching regulators, switching
converters, motor drivers and relay drivers.
These transistors can be operated directly
from integrated circuits.
G
D
S
TO-251
(50N06F)
FEATURES
TO-252
( 50N06 G)
D
RDS(ON) = [email protected] = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(C RSS = 80pF typical)
G
D
Fast switching capability
100% avalanche energy specified
GD
S
TO-220AB
( 50N06A )
Improved dv/dt capability
175°C operation temperature
S
ITO-220AB (TO-220F)
(50N06AF)
D (Drain)
PRODUCT SUMMARY
ID (A)
50
VDSS (V)
60
RDS(ON) (Ω)
0.022 @ V GS = 10V
QG(nC) max.
40
G
(Gate)
S (Source)
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Page 1 of 9
50N06 Series
SEMICONDUCTOR
RoHS
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Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltag
T J =25°C to 150°C
60
V DGR
Drain to Gate voltage
R GS =20KΩ
60
V GS
ID
Gate to Source voltage
V
±20
T C =25°C
50
T C =100°C
35
Continous Drain Current
A
I DM
Pulsed Drain current(Note 1)
200
E AS
Single pulses avalanche energy(Note 2)
480
E AR
Repetitive avalanche energy(Note 1)
dv/dt
PD
T STG
TL
mJ
13
Peak diode recovery dv/dt(Note 3)
V /ns
7
TO-251
130
TO-252
130
TO-220
120
Total power dissipation, T C =25 °C
W
TO-220F
TJ
UNIT
70
Operation junction temperature
-55 to 175
Storage temperature
-55 to 175
Maximum soldering temperature, for 10 seconds
300
1.6mm from case
Mounting torque, #6-32 or M3 screw
ºC
10 (1.1)
lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2. L = 5.6mH, I AS = 50A, V DD = 25V, R G = 0Ω, starting T J =25°C.
3. I SD ≤ 50 A, di/dt ≤ 300 A/us, V DD ≤ V (BR)DSS , starting T J =25°C.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Min.
PARAMETER
Thermal resistance, junction to case
Typ.
Max.
TO-251/TO-252
1.15
TO-220
1.24
TO-220F
1.78
UNIT
ºC/W
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
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0.5
TO-251/TO-252
100
TO-220/TO-220F
62.5
Page 2 of 9
50N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
PARAMETER
TEST CONDITIONS
Drain to source breakdown voltage
I D = 250µA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 250µA, referenced to 25°C
Drain to source leakage current
V DS =60V, V GS =0V
Min.
Typ.
Max.
60
V
V/ºC
0.07
T C = 25°C
1.0
T C =150°C
50
μA
Gate to source forward leakage current
V GS = 20V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -20V, V DS = 0V
-100
R DS(ON)
Static drain to source on-state resistance
I D = 50A, V GS = 10V
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
I GSS
nA
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
t d(ON)
tr
t d(OFF)
tf
QG
UNIT
18
2.0
22
mΩ
4.0
V
900
1220
430
550
Reverse transfer capacitance
80
100
Turn-on delay time
40
60
100
200
90
180
80
160
30
40
Rise time
Turn-off delay time
V DS = 25V, V GS = 0V, f =1MHz
V DD = 30V, I D = 25A, R G =50Ω
(Note 1, 2)
Fall time
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
V DS = 48V, V GS = 10V, I D = 50A
(Note 1, 2)
9.6
pF
ns
nC
10
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
IS
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 50A, V GS = 0V
1.5
Continous source current
Integral reverse P-N junction
diode in the MOSFET
50
D (Drain)
A
I SM
Pulsed source current
200
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I S = 50A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Page 3 of 9
55
ns
80
nC
50N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
50 N 06
A
Current rating, ID
50 = 50A
MOSFET series
N = N-Channel
Voltage rating, VDS
06 = 60V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251 ( I-PAK)
G = TO-252(D-PAK)
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T)
Body Diode Recovery dv/dt
V DD
Body Diode
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Page 4 of 9
Forward Voltage Drop
50N06 Series
SEMICONDUCTOR
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Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
Fig.3A Gate charge test circuit
12V
tF
Fig.3B Gate charge waveform
QG
Same Type as
D.U.T.
50kΩ
0.2µF
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
VG
1mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
RG
V DD
D.U.T.
10V
tp
l AS
Time
tp
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Page 5 of 9
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
4.5V
0º
10 1
25ºC
10 1
15
5V
Bottorm: 4.5V
C
10 2
7V
6V
5.5V
Drain current, l D (A)
Drain Current, l D (A)
Fig.2 Transfer characteristics
V GS
Top: 15V
10V
8V
10 2
RoHS
RoHS
50N06 Series
SEMICONDUCTOR
Note:
1. V DS = 50V
2. 250µs Pulse Test
10 0
10 0
10 1
2
3
7
6
8
9
10
Gate-Source voltage, V GS (V)
Fig.3 On-Resistance variation vs drain
current and gate voltage
Fig.4 On state current vs. allowable case
temperature
3.5
3.0
2.5
2.0
1.5
V GS = 10V
1.0
V GS = 20V
0.5
20
40
60
150 ºC
25ºC
10 1
Note:
1. V GS = 0V
2. 250µs Test
10 0
0.2
0.0
0
10 2
80 100 120 140 160 180 200
0.4
Drain current, I D (A)
Gate-to-Source voltage,V GS (V)
C lSS
2000
Note:
1. V GS = 0V
2. f = 1MHz
C OSS
1000
500
C RSS
0
0
5
10
15
20
25
30
35
10
1.2
1.4
1.6
V DS = 30V
8
6
V DS = 48V
4
2
Note: l D = 50A
0
0
Drain-Source voltage, V DC (V)
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1.0
12
C lSS = C GS + C GD (C DS = shorted)
C OSS = C DS + C GD (C DS = shorted)
C RSS = C GD
1500
0.8
Fig.6 Gate charge characteristics
3000
2500
0.6
Source-Drain voltage, V SD (V)
Fig.5 Capacitance characteristics
(Non-Repetitive)
Capacitance (pF)
5
4
Drain-Source voltage, V DS (V)
Reverse drain current, l SD (A)
Drain-Source On-Resistance, R DS(ON) (mΩ)
10 0
10 -1
5
10
15
20
25
30
35
Total gate charge, Q G (nC)
Page 6 of 9
40
45
50N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.7 Breakdown voltage variation vs
junction temperature
Fig.8 On-Resistance variation vs
junction temperature
3.0
1.0
0.9
Note:
1. V GS = 0V
2. l D = 250μA
10 3
-50
0
50
100
150
0
50
100
150
Fig.9 Maximum safe operating
Fig.10 Maximum drain current vs.
case temperature
50
40
10ms
10 1
10ms
Note:
1. T C = 25 ° C
2. T J = 150°C
3. Sing Pulse
10 -1
10 -1
10 0
10 1
0.2
0.1
0.05
0.02
0.01
Single pulse
10 -3
Note:
1. R th(j-c) (t) = 1.42°C/W Max.
2. Duty Factor, D = t1/t2
3. T J -T C = P DM x R th(j-c) (t)
10 -2
10 -1
10 0
50
75
100
125
Case temperature, T C (°C)
D =0.5
10 1
Square wave pulse duration, t 1 (sec)
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20
0
25
10 2
Fig.11 Transient thermal response curve
10 -4
30
10
Drain-Source voltage, V DS (V)
Thermal response, R th(j-c) (t)
Note:
1. V GS = 10V
2. l D = 25A
0.5
-50
100μs
10 -2
10 -5
1.0
Junction temperature, T J (°C)
1ms
10 -1
1.5
200
Operation in This
Area by R DS (on)
10 0
2.0
Junction temperature, T j (°C)
10 2
10 0
2.5
0.0
0.8
-100
Drain current, l D, (A)
Drain-Source On-Resistance,
R Ds(ON) , (Normalized)
1.1
Drain current, l D (A)
Drain-Source breakdown voltage,
BV Dss (Normalized)
1.2
Page 7 of 9
150
50N06 Series
SEMICONDUCTOR
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
1.37(0.054)
5.2(0.204)
0.62(0.024)
0.48(0.019)
6.2(0.244)
4T
6(0.236)
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
1.37(0.054)
0.62(0.024)
0.48(0.019)
2
1
1.14(0.045)
0.76(0.030)
2.28(0.090)
2
3
9.35(0.368)
10.1(0.397)
0.89(0.035)
0.64(0.025)
6.2(0.244)
6(0.236)
0.62(0.024)
0.45(0.017)
D (Drain)
4.57(0.180)
G
(Gate)
S (Source)
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Page 8 of 9
50N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
ITO-220AB
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
D (Drain)
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 9 of 9