4N60 Series

4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
(4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon
device with current conduction capability
of 4A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
D
D
G
S
G
D
S
TO-251 (I-PAK)
(4N60F)
TO-252 (D-PAK)
(4N60G)
D
FEATURES
RDS(ON) = [email protected] = 10V
Ultra low gate charge(20nC max.)
Low reverse transfer capacitance
(C RSS = 8pF typical)
G
D
GD
S
Fast switching capability
100% avalanche energy specified
S
TO-220F
(4N60AF)
TO-220AB
(4 N60A )
Improved dv/dt capability
150°C operation temperature
D (Drain)
PRODUCT SUMMARY
ID (A)
4
VDSS (V)
600
RDS(ON) (Ω)
2.5 @ V GS = 10V
QG(nC) max.
20
G
(Gate)
S (Source)
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Page 1 of 10
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
600
V DGR
Drain to Gate voltage
R GS =20KΩ
600
V GS
ID
UNIT
V
±30
Gate to Source voltage
T C =25°C
4
Continous Drain Current
T C =100°C
2.48
A
I DM
Pulsed Drain current(Note 1)
I AR
Avalanche current(Note 1 )
E AR
Repetitive avalanche energy(Note 1 )
I AR =4A, R GS =50Ω, V GS =10V
10.6
E AS
Single pulse avalanche energy (Note 2 )
I AS =4A, L = 30mH
260
dv/dt
Peak diode recovery dv/dt(Note 3)
16
4
mJ
4.5
TO-251/ TO-252
PD
Total power dissipation (Derate above 25°C)
T C =25°C TO-220AB
T STG
TL
50 (0.39)
100 (0.8)
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
Maximum soldering temperature, for 10 seconds
W(W/°C)
36 (0.26)
TO-220F
TJ
V /ns
ºC
300
1.6mm from case
10 (1.1)
Mounting torque, #6-32 or M3 screw
lbf . in (N . m)
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2 . I AS = 4 A, V DD = 50V, L = 30mH, R GS = 25Ω, starting T J =25°C.
3 . I SD ≤ 4 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
PARAMETER
Thermal resistance, junction to case
Min.
Typ.
Max.
TO-251/ TO-252
2.5
TO-220AB
1.2
TO-220F
3.5
TO-251/TO-252
85
UNIT
ºC/W
Rth(j-a)
Thermal resistance, junction to ambient
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TO-220AB
62.5
TO-220F
62.5
Page 2 of 10
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
OFF CHARACTERISTICS
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
Drain to source breakdown voltage
I D = 250µA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 250µA, V DS = V GS
Drain to source leakage current
V
600
V/ºC
0.6
V DS =600V, V GS =0V
T C = 25°C
10
V DS =480V, V GS =0V
T C =125°C
100
μA
Gate to source forward leakage current
V GS = 30V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -30V, V DS = 0V
-100
I GSS
nA
ON CHARACTERISTICS
R DS(ON)
Static drain to source on-state resistance
I D = 2A, V GS = 10V
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
Forward transconductance
V DS =40V, l D =2A
g FS
2.2
2.0
2.5
Ω
4.0
V
4.7
S
DYNAMIC CHARACTERISTICS
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
V DS = 25V, V GS = 0V, f =1MHz
520
670
70
90
8.0
11
13
35
45
100
25
60
35
80
15
20
pF
SWITCHING CHARACTERISTICS
t d(ON)
tr
t d(OFF)
tf
QG
Turn-on delay time
Rise time
Turn-off delay time
V DD = 300V, V GS = 10V,
I D = 4A, R GS = 25Ω (Note 1, 2)
Fall time
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
V DD = 480V, V GS = 10V, I D = 4A
(Note 1, 2)
3.5
ns
nC
7.0
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
Is (Is D )
PARAMETER
TEST CONDITIONS
Diode forward voltage
I SD = 4A, V GS = 0V
Continous source to drain current
Integral reverse P-N junction
diode in the MOSFET
Min.
Typ.
Max.
UNIT
1.4
V
4
D (Drain)
I SM
Pulsed source current
16
A
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 4A, V GS = 0V,
dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Page 3 of 10
250
ns
1.5
μC
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
4
N 60
A
Current rating, ID
4 = 4A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T)
Body Diode Recovery dv/dt
V DD
Body Diode
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Page 4 of 10
Forward Voltage Drop
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
V GS
Same Type as
D.U.T.
50kΩ
12V
0.2µF
QG
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
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Page 5 of 10
RoHS
RoHS
4N60 Series
SEMICONDUCTOR
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.1 Breakdown voltage variation vs.
Temperature
Fig.2 On-Resistance variation vs. junction
vs. temperature
3.0
Drain-Source On-Resistance,
R DS(ON) (Normalized)
Drain-Source Breakdown voltage
, BV DSS (Normalized)(V)
1.2
1.1
1.0
0.9
Note:
1. V GS = 0V
2. l D = 250µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note:
1. V GS = 10V
2. l D = 2A
0.5
0.0
-100
200
50
100
150
200
Junction-Temperature, T J (°C)
Fig.3-1 Maximum Safe operating area
(for 4N60A)
Fig.3-2 Maximum Safe operating area
(for 4N60AF)
Operation in This Area is Limited by R DS(ON)
Drain Current, l D (A)
Drain Current, l D (A)
0
Junction temperature, T j (°C)
Operation in This Area is Limited by R DS(ON)
100µs
10 1
1ms
10ms
DC
10 0
10 -1
10 0
-50
Note:
1. T J = 25°C
2. T J = 150°C
3. Single Pulse
10 1
10 2
10 1
100µs
1ms
10ms
10ms
10 0
DC
10 -1
Note:
1. T J = 25°C
2. T J = 150°C
3. Single Pulse
10 2
10 0
10 3
10 1
10 2
10 3
Drain-Source voltage, V DS (V)
Drain-Source voltage, V DS (V)
Fig.3-3 Maximum Safe operating area
(for 4N60F/4N60G)
Fig.4 Maximum drain current vs. Case
temperature
5
10 1
4
10 µ s
Drain current, l D (A)
Drain Current, l D (A)
Operation in This Area is Limited by R DS(ON)
100µs
1ms
10ms
10 0
10 -1
DC
Note:
1. T J = 25°C
2. T J = 150°C
3. Single Pulse
10 2
10 0
10 1
2
1
10 2
0
10 3
Drain-Source voltage, V DS (V)
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3
25
50
75
100
125
Case temperature, T C (°C)
Page 6 of 10
150
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.6 Transfer characteristics
Fig.5 On-State characteristics
V GS
Top: 10V
9V
8V
7V
6V
5.5V
Bottorm: 5.0V
10V
8V
10
6V
Drain current, l D (A)
Drain Current, l D (A)
10
5V
1
0.1
Note:
1. 250µs Pulse Test
2. T C = 25°C
25°C
150°C
1
Note:
1. V DS = 50V
2. 250µs Pulse Test
0.1
0.1
10
1
10
Fig.8 Body diode forward voltage variation
vs. source current and temperature
Fig.7 On-Resistance variation vs drain
current and gate voltage
6
Reverse drain current, l DR (A)
Drain-Source On-Resistance, R DS(ON) (Ω)
8
Gate-Source voltage, V GS (V)
Drain-to-Source voltage, V DS (V)
5
4
V GS = 10V
3
2
V GS = 20V
1
0
Note:
1. T C = 25°C
0
2
6
4
8
10
10
150ºC
25ºC
1
Note:
1. V GS = 0V
2. 250µs Test
0.1
0.2
12
Fig.9 Capacitance characteristics
(Non-Repetitive)
C iss = C gs +C gd ( C ds = shorted )
C oss = C ds +C gd C rss = C gd
C iss
1000
800
C oss
600
Note:
1. V GS = 0V
2. f = 1MHz
400
C rss
200
1
10
V DS = 120V
8
V DS = 480V
1.0
1.2
1.4
1.6
1.8
V DS = 300V
6
4
2
Note:
1. l D = 4A
0
10
0
5
10
15
20
Total gate charge, Q G (nC)
Drain-Source voltage, V DS (V)
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0.8
12
0
0.1
0.6
Fig.10 Gate charge characteristics
Gate-Source voltage,V GS (V)
1200
0.4
Source-Drain voltage, V SD (V)
Drain current, I D (A)
Capacitance (pF)
6
4
2
Page 7 of 10
25
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Thermal response, Rth(j-c) (t)
Fig.11-1 Transient thermal response curve for 4N60A
10 0
D = 0.5
0.2
0.1
10 -1
P DM
0.05
t1
Single pulse
0.02
0.01
t2
Notes:
1. Rth(j-c) (t) = 1.20°C/W Max.
2. Duty factor, D = t1/ t 2
3. TJM - TC = PDM * Rth(j-c) (t)
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
Square wave pulse duration, t 1 (sec)
Thermal response, Rth(j-c) (t)
Fig.11-2 Transient thermal response curve for 4N60AF
D = 0.5
10 0
0.2
0.1
0.05
P DM
0.02
0.01
10 -1
t1
Single pulse
Notes:
t2
1. Rth(j-c) (t) = 3.50°C/W Max.
2. Duty factor, D = t1/ t 2
3. TJM - TC = PDW * Rth(j-c) (t)
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
Square wave pulse duration, t 1 (sec)
Thermal response, Rth(j-c) (t)
Fig.11-3 Transient thermal response curve (for 4N60F/4N60G)
D = 0.5
10 0
0.2
0.1
0.05
0.02
0.01
10 -1
P DM
t1
Single pulse
Notes:
1. Rth(j-c) (t) = 2.5°C/W Max.
2. Duty factor, D = t1/ t 2
3. TJM - TC = PDW * Rth(j-c) (t)
10 -5
10 -4
10 -3
10 -2
10 -1
Square wave pulse duration, t 1 (sec)
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t2
Page 8 of 10
10 0
10 1
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Case Style
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
0.62(0.024)
0.48(0.019)
1.37(0.054)
5.2(0.204)
6.2(0.244)
6(0.236)
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
0.62(0.024)
0.48(0.019)
1.37(0.054)
2
1
3
2
6.2(0.244)
6(0.236)
9.35(0.368)
10.1(0.397)
0.89(0.035)
0.64(0.025)
1.14(0.045)
0.76(0.030)
2.28(0.090)
0.62(0.024)
0.45(0.017)
4.57(0.180)
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
D (Drain)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
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Page 9 of 10
4N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-220F
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
D (Drain)
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 10 of 10