TTC5200

RoHS
RoHS
TTC5200
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
15A/230V/150W
5.00
20.00±0.20
18.00
3.00
6.00
26.00
2.00
9.00
4.00
ø3.30±0.20
TO-3PL
20.50
2.50
3.00
2.50
(typ.)
FEATURES
High-speed switching
High collector-emitter voltage: VCEO = 230V(min)
Complementary to TTA1943
TO-3PL package which can be installed to the heat sink
with one screw
1.00
(typ.)
5.45±0.05
0.60
3.20
5.45±0.05
1
2
3
C
1. BASE
2. COLLECTOR (HEAT SINK)
APPLICATIONS
B
3. EMITTER
E
Power amplifier
Recommended for 100W high-fidelity audio frequency
amplifier output stage
PNP
All dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
VALUE
VCBO
Collector to base voltage
230
V CEO
Collector to emitter voltage
230
V EBO
UNIT
V
5
Emitter to base voltage
IC
Collector current
15
I CP
Peak collector current, tp ≤ 5ms
30
IB
Base current
1.5
PC
Collector power dissipation
Tj
Junction temperature
150
T stg
Storage temperature
-55 to 150
A
T C = 25°C
150
W
ºC
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TTC5200
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
CONDITIONS
PARAMETER
MIN
UNIT
MAX
TYP
ICBO
Collector cutoff current
V CBO = 230V, l E = 0
5.0
I EBO
Emitter cutoff current
V EBO = 5V, l C = 0
5.0
Collector to emitter breakdown voltage
l CEO = 50mA
230
V CBO
Collector to base voltage
l CBO = 50mA
230
V EBO
Emitter to base voltage
l EBO = 0.1mA
5
µA
V (BR)CEO
Forward current transfer ratio
(DC current gain)
h FE
V CE(sat)
V CE = 5V, l C = 1A
80
V CE = 5V, l C = 7A
35
V
160
Collector to emitter voltage
l C = 8A, I B = 0.8V
3.0
Base to emitter voltage
l C = 7A, V CE = 5V
1.5
Transition frequency
V CE = 5V, l C = 1A
Collector output capacitance
V CB = 10V, l E = 0, f = 1MHz
V
V BE
fT
C ob
Fig.1 l C -V CE Characteristics
145
pF
1000
Common emitter
T C = 25°C
Single pulse test
400m
A
300m
12
A
200m
DC Current Gain, h FE
Collector current, l C (A)
MHz
Fig.2 h FE -l C Characteristics
16
A
150m
A
100mA
8
60mA
40mA
4
T C = 100°C
100
2
0
4
8
6
25°C
-55°C
10
Common emitter
V CE = 5V
Single pulse test
l B = 20mA
1
0.001
0
10
Collector emitter voltage, V CE (V)
1
0.01
T C = 100°C
25°C
Common emitter
I C /I B = 10
Single pulse test
-55°C
0.001
0.001
0.01
0.1
1
10
100
Collector current, I C (A)
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0.1
1
10
100
Fig.4 V BE (sat) - I C Temperature Characteristics
Base -Emitter Saturation Voltage, V BE(sat) (V)
10
0.1
0.01
Collector Current, l C (A)
Fig.3 V CE (sat) - I C Temperature Characteristics
Collector-Emitter Saturation Voltage, V CE(sat) (V)
30
10
1
-55°C
T C = 100°C
25°C
Common emitter
I B /I B = 10V
Single pulse test
0.1
0.001
0.01
0.1
1
10
Collector current, l C (A)
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100
TTC5200
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.5 I C - V BE Temperature Characteristics
Fig.6 P C -Ta Derating
Collector Power Dissipation, P C (W)
Collector Current, l C (A)
16
12
8
-55°C
25°C
4
T C = 100°C
Common emitter
V CE = 5V
Single pulse test
0
0
0.4
0.8
1.6
1.2
200
150
Infinite heat sink
100
50
0
2.0
0
Base-Emitter Voltage, V BE (V)
100
50
150
Ambient Temperature, T a (°C)
Fig.7 Transient thermal resistance
Transient thermal resistance,
R th(j-c) (°C/W)
10
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse
T C = 25°C Infinite heat sink
1
0.1
0.01
0.001
0.01
10
1
0.1
Pulse width, t (s)
Fig.8 Safe Operating Area (SOA)
100
10
DC operation
T C = 25°C
1ms*
10ms*
100ms*
1
*Single nonrepetitive pulse
T C = 25°C
0.1
V CEO MAX
Collector Current, l C (A)
I C MAX (Pulse)*
I C MAX (continuous)
Curves must be derated linearly
with increase in temperature.
0.01
1
10
100
Collector-Emitter Voltage, V CE (V)
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1000
100
200