65N06 Series

RoHS
RoHS
65N06 Series
SEMICONDUCTOR
Nell High Power Products
N-Channel Power MOSFET
(63A, 55Volts)
DESCRIPTION
The Nell 65N06 is a three-terminal silicon
device with current conduction capability
of 63A, fast switching speed, low on-state
resistance, breakdown voltage rating of 55V,
and max. threshold voltage of 4 volts.
D
D
They are designed as an extremely efficient
and reliable device and has integral zener
giving diodes ESD protection up to 2KV.
They are intended for use in DC to DC
convertors and general purpose switching
applications.
G
G
D
S
S
TO-263 (D2PAK)
TO-220AB
(6 5N06A )
FEATURES
(6 5N06H )
RDS(ON) = [email protected] = 10V
Ultra low gate charge(40nC typical)
Low reverse transfer capacitance
(C RSS = 170pF typical)
D (Drain)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
PRODUCT SUMMARY
ID (A)
63
VDSS (V)
60
RDS(ON) (Ω)
0.018 @ V GS = 10V
QG(nC) typ.
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltag
T J =25°C to 150°C
55
V DGR
Drain to Gate voltage
R GS =20KΩ
55
V GS
ID
I DM
dv/dt
PD
Gate to Source voltage
V GS =10V , T C =25°C
63
V GS =10V , T C =100°C
44
Continous Drain Current
Pulsed Drain current(Note 1)
240
Peak diode recovery dv/dt(Note 2)
7.0
Total power dissipation
T C =25°C
Derating factor above 25°C
Human body model
(100 pF, 1.5KΩ)
W
W/°C
2
KV
Operation junction temperature
-55 to 175
Storage temperature
-55 to 175
Note: 1. Repetitive rating: pulse width limited by junction temperature.
2. I SD ≤ 50 A, di/dt ≤ 300 A/us, V DD ≤ V (BR)DSS , starting T J =25°C.
Page 1 of 8
ºC
300
10 (1.1)
Mounting torque, #6-32 or M3 screw
www.nellsemi.com
1.6mm from case
V /ns
1.0
TJ
Maximum soldering temperature, for 10 seconds
A
150
Electro-static Discharge capacitor voltage, all pins
TL
V
±20
VC
T STG
UNIT
lbf . in (N . m)
65N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Typ.
Min.
PARAMETER
UNIT
Max.
1.05
0.50
ºC/W
62.5
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
PARAMETER
TEST CONDITIONS
Drain to source breakdown voltage
V GS =0V, I D =250μA
Breakdown voltage temperature coefficient
I D = 250µA, referenced to 25°C
Drain to source leakage current
V DS =60V, V GS =0V
Min.
Typ.
Max.
55
V
V/ºC
0.07
T C = 25°C
5
T C =150°C
250
μA
Gate to source forward leakage current
V GS = -20V, V DS = 0V
100
Gate to source reverse leakage current
V GS = 20V, V DS = 0V
-100
R DS(ON)
Static drain to source on-state resistance
V GS =10V, I D =25A (Note 1)
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =1000μA
2
Forward transconductance
V DS =25V, I D =25A
6
nA
I GSS
g fs
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
t d(ON)
Turn-on delay time
tr
t d(OFF)
Rise time
Turn-off delay time
tf
Fall time
LD
Internal drain inductance
LS
Internal source inductance
QG
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
W DSS
Drain to source non-repetitivw unclamped
inductive turn-off energy
UNIT
15
V DS = 25V, V GS = 0V, f =1MHz
V DD = 30V, I D = 25A, R G =10Ω
V GS =10V (Note 1)
18
mΩ
4
V
30
1500
2000
370
470
170
250
15
25
30
60
35
50
25
40
pF
ns
4.5
Between lead, 6mm form
package and center of die
nH
7.5
40
V DS = 44V, V GS = 10V
I D = 50A
nC
10
15
I D = 50A, V DD≤25V,
V GS =10V, R GD =50Ω
125
mJ
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
I S (I SD )
PARAMETER
Diode forward voltage
Continuous source to drain current
Typ.
Max.
I SD = 25A, V GS = 0V
0.95
1.20
I SD = 50A, V GS = 0V
1.0
1.35
TEST CONDITIONS
Min.
UNIT
V
Integral reverse P-N junction
diode in the MOSFET
63
D (Drain)
I SM
Pulsed source current
240
G
(Gate)
A
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
t ON
Forward turn-on time
I SD = 50A, V GS = -10V,
V R =30V, dI F /dt = -100A/µs
ns
0.1
µC
Intrinsic turn-on time is negligible (turn-on is domonated by L S +L D )
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%
www.nellsemi.com
50
Page 2 of 8
65N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
65 N 06
A
Current rating, ID
65 = 65A
MOSFET series
N = N-Channel
Voltage rating, VDS
06 = 60V
Package type
A = TO-220AB
H = TO-263(D²-PAK)
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T)
Body Diode Recovery dv/dt
V DD
Body Diode
www.nellsemi.com
Page 3 of 8
Forward Voltage Drop
65N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
VG
QG
10V
Same Type as
D.U.T.
50kΩ
12V
0.2µF
0.3µF
Q GS
Q GD
V DS
V GS
D.U.T.
1mA
Charge
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
www.nellsemi.com
Page 4 of 8
RoHS
RoHS
65N06 Series
SEMICONDUCTOR
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.2 Transient thermal impedance
120
110
100
10
90
1
R th(j-c) , (°C/W)
P D%
Fig.1 Normalised power dissipation
80
70
60
50
40
30
20
10
0
D=
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0
P D % = 100 P D / P D25°C
0
20
40
60
100 120
80
140 160 180
10 -7
10 -5
10 -3
tp
T
t
10 -1
10
Time(s)
Fig.4 Typical output characteristics, T j =25°C
Fig.3 Normalised continuous drain current
100
120
110
V GS≥5 V
100
90
80
70
60
50
D=
T
0.001
Tc/°C
8
7.5
16
10
VGS (V)=
7
80
6.5
l D (A)
I D%
tp
PD
60
6
40
5.5
40
30
20
10
0
0
20
40
60
80
100
5
20
I D % = 100 I D / I D25°C
4.5
4
120 140
0
160 180
0
2
4
8
6
10
V SD (V)
Tc/°C
Fig.6 Typical on-state resistance, T j =25°C
Fig.5 Safe operating area. T mb =25°C
1000
30
RDS(ON)=VDS/ID
VGS (V)=
6.5
tp=
100
I D (A)
10us
100us
DC
1 ms
10
25
R DS(ON) (mΩ)
1us
6
7
8
20
9
10
15
10 ms
100 ms
10
1
1
10
10
100
V Ds (V)
www.nellsemi.com
15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
I D (A)
Page 5 of 8
65N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.8 Gate threshold voltage
Fig.7 Typical transfer characteristics
100
5
80
4
V GS(th) (V)
I D (A)
max
60
40
typ
3
mi n
2
T J =175 °C
1
20
25 °C
0
0
1
2
3
5
4
6
7
8
9
0
-100
10
-50
0
50
V GS (V)
100
150
200
T J (°C)
Fig.10 Sub-threshold drain current
Fig.9 Typical transconductance,T J =25°C
10 -1
35
30
10 -2
25
I D (A)
g fs (S)
2%
20
15
98%
typ
10 -3
10 -4
10
10 -5
5
V DS =25V
0
60
40
20
0
80
10 -6
100
1
3
2
4
I D (A)
V GS (V)
Fig.11 Normalized drain-source on-state resistance
Fig.12 Typical capacitances,C iss , C oss , C rss
Capacitances, (1000 pF)
2
1.5
1
0.5
-100
5
3
2.5
R DS(ON) /R DS(ON) 25°C
0
I D =25A
V GS =5V
-50
0
50
100
150
200
T C (°C)
www.nellsemi.com
2.5
V GS =0V
F=1 MH Z
C ISS
2
C OSS
1.5
1
C RSS
0.5
0
0.01
0.1
1
V DS (V)
Page 6 of 8
10
100
65N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.13 Typical turn-on gate-charge characteristics
Fig.14 Normalised avalanche energy rating
12
120
10
110
100
90
80
V DS =14V
8
W DSS (%)
V GS (V)
V DS =44V
6
4
2
I D =50A
0
0
10
20
I D =75A
20
40
30
70
60
50
40
30
20
10
0
40
60
80
100
120
140
160
Q G (nC)
T C (°C)
Fig.15 Typical diode forward voltage
Fig.16 Avalanche energy test circuit
180
100
L
V DS
I S (A)
V DD
+
80
60
-
VGS
40
-I D /100
D.U.T.
0
T J =175 °C
R GS
20
R 01
shunt
25 °C
V GS =0
0
0
0.2
0.4
0.6
0.8
1
1.2
W DSS =0.5·L·(I D )²·V (BR)DSS /(V (BR)DSS -V DD )
1.4
V SD (V)
www.nellsemi.com
Page 7 of 8
65N06 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
D (Drain)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2.79 (0.110)
G
(Gate)
S (Source)
www.nellsemi.com
Page 8 of 8