50N30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET 50A, 300Volts DESCRIPTION The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. threshold voltage of 6.5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, battery chargers, DC choppers, temperature and lighting controls and general purpose switching applications. G D S TO-247AB (50N30C) D (Drain) FEATURES RDS(ON) = 0.080Ω @ VGS = 10V G (Gate) Ultra low gate charge(65nC typical) Low reverse transfer capacitance (C RSS = 60pF typical) S (Source) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 50 VDSS (V) 300 RDS(ON) (Ω) 0.080 @ V GS = 10V QG(nC) typical 65 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 300 V DGR Drain to Gate voltage R GS =20KΩ 300 V GS ID I DM Gate to Source voltage Continuous Drain Current 50 T C =100°C 35 Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) l AR =50A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) l AS =50A, L =0.1mH 50 Peak diode recovery dv/dt(Note 3) Total power dissipation TJ T STG TL Linear derating factor above T C =25 ° C T C =25°C 50 mJ 1500 50 V /ns 690 W 5.8 ° C/W Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.6mm from case Page 1 of 7 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =50A, L=0.1mH, V DD =50V, R GS =25Ω, starting T J = 25°C. 3 . I SD ≤ 50A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , T J ≤ 150 °C. www.nellsemi.com A 150 I AR PD V ±20 T C =25°C E AR dv/dt UNIT lbf . in (N . m) 50N30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN. TYP. MAX. UNIT 0.18 ºC/W 50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT OFF CHARACTERISTICS V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 1mA, V GS = 0V Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS Drain to source leakage current 300 V V/ºC 0.35 V DS =300V, V GS =0V T C =25°C V DS =240V, V GS =0V T C =125°C 10 μA 100 Gate to source forward leakage current V GS = 20V, V DS = 0V 100 Gate to source reverse leakage current V GS = -20V, V DS = 0V -100 0.080 Ω 6.5 V I GSS nA ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance V GS =10V, l D =25A V GS(TH) Gate threshold voltage V GS =V DS , I D =4mA 3.5 Forward transconductance V DS = 20V, l D = 25A 19 g fs S 29 DYNAMIC CHARACTERISTICS C ISS Input capacitance C OSS Output capacitance C RSS RG Reverse transfer capacitance 3160 pF 600 V DS =25V, V GS =0V, f=1MHz 60 Gate input resistance 0.17 Ω SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Turn-on delay time Rise time Turn-off delay time 14 15 V DD =150V, V GS =10V I D =25A, R GS =2Ω (Note1,2) ns 24 Fall time 9 Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) 65 V DD = 150V, V GS =10V I D =25A, (Note1,2) 22 nC 32 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) TEST CONDITIONS PARAMETER Diode forward voltage I SD = 50A, V GS = 0V Continuous source to drain current Integral reverse P-N junction diode in the MOSFET MIN. TYP. MAX. UNIT 1.4 V 50 D (Drain) A I SM Pulsed source current 200 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 25A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 250 0.95 ns μC 50N30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 50 N 30 C Current rating, ID 50 = 50A MOSFET series N = N-Channel Voltage rating, VDS 30 = 300V Package type C = TO-247AB ■ TEST CIRCUITS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 3 of 7 Forward Voltage Drop 50N30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TEST CIRCUIT(Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RD 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) Pulse Width ≤ 1µs Duty Factor ≤ 0.1% t d(OFF) tR Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RD V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp www.nellsemi.com Page 4 of 7 50N30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Extended output characteristics Fig.1 Output characteristics 50 90 T J = 25°C 45 T J = 25°C V GS = 10V Drain current, l D (A) Drain current, l D (A) 40 9V 35 30 25 8.5V 20 15 8V 10 50 9V 40 30 8.5V 20 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20 25 30 Drain-source Voltage, V DS (V) Drain-source Voltage, V DS (V) Fig.3 Output characteristics Fig.4 R DS(on) Normalized to l D =25A value vs. Junction temperature 3.0 50 V GS = 10V T J = 125°C 45 V GS = 10V 2.6 40 9V R DS(on) ( Normalized) Drain current, l D (A) 9.5V 60 7V 0 35 30 25 8V 20 15 7V 10 2.2 l D = 50A 1.8 l D = 25A 1.4 1.0 0.6 5 6V 0 1 3 2 4 5 7 6 8 0.2 -50 9 -25 0 25 50 75 100 125 150 Drain-source Voltage, V DS (V) Junction temperature, T J (°C) Fig.5 R DS(on) Normalized to l D =25A value vs. Drain current Fig.6 Maximum drain current vs. Case temperature 3.0 60 2.8 V GS = 10V 50 Drain current, l D (A) 2.6 R DS(on) ( Normalized) 70 10 5 0 V GS = 10V 80 2.4 2.2 T J = 125°C 2.0 1.8 1.6 1.4 1.2 0.8 0 10 20 30 40 50 60 70 Drain current, l D (A) www.nellsemi.com 30 20 10 T J = 25 °C 1.0 40 0 -50 -25 0 25 50 75 100 Case temperature, T C (°C) Page 5 of 7 125 150 50N30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 55 Forward transconductance, g fs (S) 80 50 Drain current, l D (A) 45 40 35 T J = 125°C 30 25°C 25 -40°C 20 15 10 5 5 5.5 6 6.5 7.5 7 8 8.5 9 40 25°C 30 125°C 20 10 9.5 10 0 10 20 30 40 50 60 Gate-Source voltage, V GS (V) Drain current, l D (A) Fig.9 Forward voltage drop of lntrinsic diode Fig.10 Gate charge characteristics 160 16 Gate-Source voltage, V GS (V) Source-drain current, l S (A) T J = -40°C V DS =20V 0 0 4.5 140 120 100 80 60 T J = 125°C 40 T J = 25°C 20 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 V DS =150V l D =25A l G =10mA 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 Diode forward voltage, V SD (V) Gate charge, Q G (nC) Fig.11 Capacitance characteristics Fig.12 Forward-Bias safe opeerating area 10000 10000 R DS(on) Limit Drain current, l D (A) C iss Capacitance (pF) . Fig.8 Transconductance Fig.7 Transfer characteristics 1000 C oss 100 1000 100 T j =150°C C rss 5 T C =25°C Single Pulse 10 15 20 25 30 35 40 Drain-source voltage, V DS (V) www.nellsemi.com 25µs 100µs V GS =0V f=1 MHZ 10 0 operation in this area is limited by R DS(on) 10 10 1ms 100 Drain-source voltage, V DS (V) Page 6 of 7 1000 50N30 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.13 Maximum transient thermal lmpedance R th(j-c) (°C/W) 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 Pulse width (S) Case Style TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.138) 3.81 (0.150) G 4.50 (0.177)Max D S 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) Drain 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) (TYP.) 5.45 (0.215) 5.45 (0.215) 2.21 (0.087) 2.59 (0.102) D (Drain) All dimensions in millimeters(inches) G (Gate) S (Source) www.nellsemi.com Page 7 of 7 10