IRF460 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET 20A, 500Volts DESCRIPTION D The Nell IRF460 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits UPS and general purpose switching applications. G G D S D S TO-3PB (IRF450B) TO-247AB (IRF460C) D (Drain) FEATURES RDS(ON) = 0.27Ω @ VGS = 10V G (Gate) Ultra low gate charge(210nC Max.) Low reverse transfer capacitance (C RSS = 350pF typical) S (Source) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 20 VDSS (V) 500 RDS(ON) (Ω) 0.27 @ V GS = 10V QG(nC) max. 210 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 500 V DGR Drain to Gate voltage R GS =20KΩ 500 V GS ID Gate to Source voltage UNIT V ±20 Continuous Drain Current (V GS =10V) T C =25°C 20 T C =100°C 13 A I DM Pulsed Drain current(Note 1) 80 I AR Avalanche current(Note 1) 20 E AR Repetitive avalanche energy(Note 1) l AR =20A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) l AS =20A, L =4.3mH 28 mJ dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD TJ T STG TL T C =25°C Derate above 25 ° C 3.5 V /ns 280 W 2.2 W /°C Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.6mm from case Page 1 of 7 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =20 A, L =4.3 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C. 3 . I SD ≤ 20 A, di/dt ≤ 160 A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C. www.nellsemi.com 960 lbf . in (N . m) IRF460 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(c-s) Thermal resistance, case to heat sink Rth(j-a) Thermal resistance, junction to ambient MIN. TYP. MAX. UNIT 0.45 ºC/W 0.24 40 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT STATIC V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS Drain to source leakage current 500 V V/ºC 0.63 V DS =500V, V GS =0V T C = 25°C 25.0 V DS =400V, V GS =0V T C =125°C 250 μA Gate to source forward leakage current V GS = 20V, V DS = 0V 100 Gate to source reverse leakage current V GS = -20V, V DS = 0V -100 R DS(ON) Static drain to source on-state resistance I D = 12A, V GS = 10V 0.27 Ω V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2.0 4.0 V Forward transconductance V DS = 50V, l D = 12A 13 I GSS g fs nA S DYNAMIC C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance t d(ON) Turn-on delay time tr t d(OFF) tf QG Rise time Turn-off delay time 4200 V DS = 25V, V GS = 0V, f =1MHz pF 870 350 18 59 V DD = 250V, V GS = 10V I D = 20A, R G = 4.3Ω, R D = 13Ω (Note1,2) ns 110 Fall time 58 Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) LD Internal drain inductance LS Internal source inductance 210 V DD = 400V, V GS = 10V I D = 20A, (Note1,2) 29 nC 110 5 Between lead, 6mm(0.25”) form package and center of die contact nH 13 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT V Diode forward voltage I SD = 20A, V GS = 0V 1.8 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 20 D (Drain) A I SM Pulsed source current 80 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 20A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 570 860 ns 5.7 8.6 μC IRF460 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME IRF B 460 MOSFET series N = N-Channel,IRF series Current and Voltage rating, ID & VDS 20A / 500V Package type B = TO-3P(B) C = TO-247AB ■ TYPICAL CHARACTERISTICS V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 10 1 4.5V Fig.2 Typical transfer characteristics Drain current, l D (A) Drain Current, l D (A) Fig.1 Typical output characteristics, T C =25°C Note: 1. 20µs Pulse Test 2. T C = 25°C 10 0 10 0 150ºC 10 1 Note: 1. V DS = 50V 2. 20µs Pulse Test 10 0 10 1 4 Drain-Source voltage, V DS (V) 6 5 7 8 9 10 Gate-Source voltage, V GS (V) Fig.3 Typical output characteristics, T C =150°C Fig.4 Normalized On-Resistance vs. Temperature 3.5 V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 4.5V 10 1 Note: 1. 20µs Pulse Test 2. T C = 150°C Drain-Source On-Resistance, R Ds(ON) (Normalized) Drain Current, I D (A) 25ºC 10 0 3.0 I D = 20A V GS = 10V 2.5 2.0 1.5 1.0 0.5 0.0 10 1 10 0 -60 -40 -20 20 40 60 80 100 120 140 160 Junction temperature, T j (°C) Drain-Source voltage, V DS (V) www.nellsemi.com 0 Page 3 of 7 RoHS RoHS IRF460 Series SEMICONDUCTOR Nell High Power Products Fig.5 Typical capacitance vs. Drain-to-Source voltage Fig.6 Typical source-drain diode forward voltage 10000 10 2 Capacitance (pF) 8000 Reverse drain current,I SD (A) V GS = 0V, f = 1MHz C iss = C gs +C gd ( C ds shorted ) C oss = C ds +C gd C rss = C gd 6000 C iss 4000 C oss 2000 C rss 25ºC V GS = 0V 10 1 0 10 1 10 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain- Source voltage, V SD (V) Source- Drain voltage, V SD (V) Fig.7 Typical gate charge vs. gate-to-source voltage Fig.8 Maximum safe operating area 20 10 3 I D = 20 A Operation in This Area is Limited by R DS(ON) 16 V DS = 400V Drain current, l D (A) Gate-Source voltage, V GS (V) 150ºC V DS = 250V 12 V DS = 100V 8 10 2 10µs 100µs 10 Note: 1. T C = 25°C 2. T J = 150°C 3. Single Pulse 4 1 0 40 0 80 120 160 200 1 10 1ms 10ms 10 2 10 3 2.0 Drain-source voltage, V DS (V) Total gate charge, Q G (nC) Fig.9 Maximum drain current vs. Case temperature 20 Drain current, l D (A) 16 12 8 4 0 25 50 75 100 125 150 Case temperature, T C (°C) www.nellsemi.com Page 4 of 7 IRF460 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.10 Maximum effective transient thermal impedance, Junction-to-Case Thermal response R th(J-C) (t) 1 D ~ 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.02 0.01 10 -2 Single pulse (Thermal response) t2 Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC 10 -3 10 -5 10 -4 10 -3 10 2 0.1 10 1 Rectangular pulse duration, t 1 (S) Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms RD V DS V DS 90% V GS RG D.U.T. + - V DD 10V V GS Pulse width ≤ 1µs Duty Factor ≤ 0.1% 10% t d(ON) t d(OFF) tR Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms L V DS tF BV DSS l AS RG D.U.T. l AS + V - DD l D(t) A 10V V DS(t) V DD tP 0.01Ω Time Vary t p to obtain required I AS www.nellsemi.com tp Page 5 of 7 RoHS RoHS IRF460 Series SEMICONDUCTOR Nell High Power Products Fig.12c. Maximum avalanche energy vs. Drain current Single pulse energy, E AS (mJ) 2400 lD 8.9A 13A BOTTOM 20A TOP 2000 1600 1200 800 400 V DD = 50 V 0 50 25 75 100 150 125 Starting Junction temperature, T J (°C) Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit Current Regulator Same Type as D.U.T. V GS 50KΩ QG 0.2µF 12V 10V 0.3µF + Q GD Q GS - D.U.T. V GS 3mA RG Charge RD Current Sampling Resistors Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET Driver Gate Drive D.U.T. P.W. + Circuit Layout Considerations • Low Stray lnductance • Ground Plane • Low Leakage lnductance Current Transformer + Body Diode Forward Current di/dt D.U.T. VDS Waveform + Re-Applied Voltage RG • • • • dv/dt controlled by R G Driver same type as D.U.T. l SD controlled by Duty Factor " D " D.U.T. -Device Under Test * D.U.T. I SD Waveform Reverse Recovery Current - P.W. Period VGS=10V - - D= Period Body Diode VDD Forward Drop Inductor Curent + - Diode Recovery dv/dt V DD Ripple ≤ 5% ISD *V GS = 5V for Logic Level Devices and 3V for drive devices www.nellsemi.com Page 6 of 7 V DS IRF460 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 19.9±0.3 4.0 20.0 min 4.0 max 1.8 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3PB 4.8±0.2 2.0±0.1 Φ3.2 ± 0,1 2 3 5.45±0.1 G D +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 S D (Drain) 1 3 2 G (Gate) All dimensions in millimeters(inches) S (Source) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) Drain 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) 3.55 (0.138) 3.81 (0.150) G 4.50 (0.177)Max D S 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) (TYP.) 5.45 (0.215) 5.45 (0.215) 2.21 (0.087) 2.59 (0.102) D (Drain) All dimensions in millimeters(inches) G (Gate) S (Source) www.nellsemi.com Page 7 of 7