D1600C Series

D1600C Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Standard Recovery Diodes
(Hockey PUK Version), 1600A
FEATURES
Wide current range
High voltage ratings up to 2000 V
High surge current capabilities
Diffused junction
Hockey PUK version
Case style DO-200AB(B-PUK), Nell’s C-type Capsule
Lead (Pb)-free
TYPICAL APPLICATIONS
DO-200AB(B-PUK)
Converters
Power supplies
(Nell’s C-type Capsule)
Machine tool controls
High power drives
Medium traction applications
PRODUCT SUMMARY
IT(AV)
1600A
MAJOR RATINGS AND CHARACTERISTICS
TEST CONDITIONS
PARAMETER
IF(AV)
T hs
I F(RMS)
T hs
I FSM
UNIT
VALUES
1600
A
55
ºC
3010
A
25
ºC
50 HZ
16600
60 HZ
17400
50 HZ
1378
60 HZ
1256
A
I 2t
V RRM
TJ
Typical
kA 2 s
400 to 3000
V
-40 to 175
ºC
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
08
800
900
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
D1600C
www.nellsemi.com
Page 1 of 5
lRRM, MAXIMUM
AT TJ = TJ MAXIMUM
mA
50
D1600C Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
FORWARD CONDUCTION
SYMBOL
PARAMETER
Maximum average forward current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
I F(AV)
I F(RMS)
Maximum RMS forward current
TEST CONDITIONS
25°C heatsink temperature double side cooled
t = 10ms
Maximum peak, one cycle
t = 8.3ms
I FSM
non-reptitive surge current
t = 8.3ms
t = 10ms
1600(820)
A
55 (85)
ºC
3010
A
No voltage
reapplied
16600
100%V RRM
reapplied
14000
17400
t = 10ms
14700
1378
1256
100%V RRM
reapplied
980
t = 0.1 to 10 ms, no voltage reapplied
13778
t = 8.3ms
I 2√t
Sinusoidal half wave,
initial T J = T J maximum
No voltage
reapplied
t = 8.3ms
I 2t
Maximum l²√t for fusing
UNIT
A
t = 10ms
Maximum l²t for fusing
VALUES
897
Low level value of threshold voltage
V F(TO)1
(16.7% x π x l F(AV) < I < π x l F(AV) ),T J =T J maximum
0.83
High level value of threshold voltage
V F(TO)2
(I > π x l F(AV) ),T J =T J maximum
0.95
r t1
(16.7% x π x l F(AV) < I < π x l F(AV) ),T J =T J maximum
0.27
High level value of forward slope resistance
r t2
(I > π x l F(AV) ),T J =T J maximum
0.25
l pk = 3000A, T J =T J maximum ,
t p = 10 ms sinusoidal wave
1.64
V FM
kA 2√s
V
Low level value of forward slope resistance
Maximum forward voltage drop
kA 2 s
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
SYMBOL
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
TEST CONDITIONS
VALUES
TJ
-40 to 175
T stg
-40 to 200
UNIT
ºC
R thJ-hs
DC operation single side cooled
0.073
DC operation double side cooled
0.031
K/W
Mounting force, ±10%
Approximate weight
14700
(1500)
N
(kg)
255
g
TO-200AB (B-PUK), Nell’s C-type Capsule
Case style
RthJC CONDUCTION
CONDUCTION ANGEL
SINUSOIDAL CONDUCTION
SINGLE SIDE
RECTANGULAR CONDUCTION
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.009
0.009
0.006
0.006
120°
90°
0.011
0.014
0.011
0.014
0.011
0.015
60°
0.020
0.020
0.021
0.011
0.015
0.021
30°
0.035
0.035
0.036
0.036
TEST CONDUCTIONS
UNITS
T J = T J maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
www.nellsemi.com
Page 2 of 5
D1600C Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Current ratings characteristics
Fig.2 Current ratings characteristics
180
(Single side cooled)
R thJ-hs (DC) = 0.073K/W
160
Maximum allowable heatsink
temperature(˚C)
Maximum allowable heatsink
temperature(˚C)
180
140
Conduction Angle
120
100
80
30°
60°
90°
120°
180°
60
40
0
200
600
400
800
140
120
Conduction Period
100
80
60
60°
40
1000 1200
90°
120°
30°
20
0
800
400
180°
DC
1200
1600
2000
Average forward current (A)
Average forward current (A)
Fig.3 Current ratings characteristics
Fig.4 Current ratings characteristics
180
180
(Double side cooled)
R thJ-hs (DC) = 0.031 K/W
160
Maximum allowable heatsink
temperature(˚C)
Maximum allowable heatsink
temperature(˚C)
(Single side cooled)
R thJ-hs (DC) = 0.073 K/W
160
140
120
Conduction Angle
100
80
60
60°
30°
90°
120°
180°
40
(Double side cooled)
R thJ-hs (DC) = 0.031 K/W
160
140
120
Conduction Period
30°
100
60°
80
90°
60
120°
40
180°
20
DC
20
0
400
800
1200
1600
0
2000
500
1000
1500 2000 2500
3000 3500
Average forward current (A)
Average forward current (A)
Fig.5 Forward power loss characteristics
Fig.6 Forward power loss characteristics
4500
5000
DC
4000
180°
Maximum average forward
power loss(W)
Maximum average forward
power loss(W)
0
120°
3500
90°
3000
60°
30°
2500
RMS Limit
2000
1500
1000
Conduction Angle
500
180°
4000
120°
90°
RMS Limit
60°
30°
3000
2000
Conduction Period
1000
T J = 175°C
T J = 175°C
0
0
0
400
800
1200
1600
2000
0
Average forward current (A)
www.nellsemi.com
500
1000 1500 2000 2500 3000 3500
Average forward current (A)
Page 3 of 5
D1600C Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.8 Maximum non-repetitive surge current
single and double side cooled
16000
Peak half sine wave forward current(A)
Peak half sine wave forward current(A)
Fig.7 Maximum non-repetitive surge current
single and double side cooled
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge
initial T J = 175°C
@ 60Hz 0.0083 s
@ 50Hz 0.0100 s
14000
12000
10000
8000
6000
4000
10
1
100
17000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J = 175°C, @50Hz
15000
No Voltage Reapplied
Rated V RRM Reapplied
13000
11000
9000
7000
5000
3000
0.01
Number of equal amplitude half cycle
current pulses (N)
0.1
1
Pulse train duration (S)
Fig.9 Forward voltage drop characteristcs
Instantaneous forward current (A)
10000
T J = 25°C
T J = 175°C
1000
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Instantaneous forward voltage (V)
Transient thermal lmpedance Z thJ-hs (K/W)
Fig.10 Thermal lmpedance Z thJ-hs characteristics
0.1
Steady State Value
R thJ-hs (DC) = 0.073 K/W
(Single side cooled)
R thJ-hs (DC) = 0.031 K/W
(Double side cooled)
(DC Operation)
Single side cooled
Double side cooled
0.01
0.001
0.001
0.01
0.1
Square wave pulse duration (s)
www.nellsemi.com
Page 4 of 5
1
10
D1600C Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
D
1600
C
20
1
2
3
4
1
-
"D" for standard recovery diode
2
-
Maximum average forward current, "1600" for 1600A
3
-
Case style : "C" for Nell's C-type Capsule, DO-200AB (B-PUK)
4
-
Voltage code, code x 100 = VRRM
DO-220AB (B-PUK), Nell's C-type Capsule
Ø3.5 (0.14)x
Ø58.5 (2.30) MAX.
1.8 (0.07) deep MIN. both ends
Ø 34 (1.34) MAX.
2 places
26.9(1.06) MAX.
0.8(0.03) MIN.
both ends
Ø53(2.09)MAX.
K
A
All dimensions in millimeters (inches)
www.nellsemi.com
Page 5 of 5