RoHS RoHS MBR6060PT Series SEMICONDUCTOR Nell Semiconductors Dual Common-Cathode Schottky Rectifier, Available RoHS* 60A (30A x2), 60V COMPLIANT FEATURES 150°C T J operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 260°C maximum, 40 s per JESD 22B-106 (for TO-247AB package) 1 2 3 TO-247AB CASE PIN 2 DESCRIPTION PIN 1 The MBR6060PT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. PIN 3 PRODUCT SUMMARY APPLICATIONS Switching mode power supplies DC to DC converters Freewheeling diodes Reverse battery protection. MECHANICAL DATA Case: TO-247AB (TO-3P) Molding compound meets UL 94 V-O flammability rating Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: As marked Mounting Torque: 10 in-lbs maximum l F(AV) 30A x 2 VR 60V V F at l F 0.65V l RM max . 100mA at 125°C T J max. 150°C Diode variation Dual dice, Common cathode E AS 27 mJ MAJOR RATINGS AND CHARACTERISTICS VALUE UNIT 30 x 2 A 60 V 8.3 ms single half sine-wave 400 A VF 30 A pk , T J = 125°C 0.65 V TJ Range -65 to 150 °C SYMBOL l F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM www.nellsemi.com Page 1 of 6 MBR6060PT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors VOLTAGE RATINGS SYMBOL PARAMETER Maximum DC reverse voltage VALUE UNIT 60 V VR Maximum working peak reverse voltage V RWM V DC Maximum DC blocking voltage ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per device per diode VALUE TEST CONDITIONS UNIT 60 l F(AV) T C = 122°C, rated V R A 30 Non-repetitive peak surge current l FSM Surge applied at rated load condition half wave single phase 60 Hz Non-repetitive avalanche energy E AS T J = 25°C, l AS = 4A, L = 3.4mH Repetitive avalanche current l AR Current decaying linearly to zero in 1 μs Frequency limited by T J maximum V A = 1.5 x V R typical 400 A 27 mJ 6 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS I F = 30A VALUE UNIT 0.76 T J = 25°C Maximum forward voltage drop V FM (1) I F = 60A 0.90 I F = 30A 0.65 V T J = 125°C I F = 60A Maximum instantaneous reverse current l RM (1) 0.80 T J = 25°C 1 Rated DC voltage mA T J = 125°C 100 Maximum junction capacitance CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C 800 pF Typical series inductance LS Measured from top of terminal to mounting plane 7.5 nH 10000 V/µs Maximum voltage rate of change dV/dt Rated V R Note (1) Pulse width < 300 µs, duty cycle < 2% www.nellsemi.com Page 2 of 6 RoHS RoHS MBR6060PT Series SEMICONDUCTOR Nell Semiconductors THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER VALUE TEST CONDITIONS Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range T stg -65 to 175 UNIT °C Maximum thermal resistance, junction to case 1.0 R thJC DC operation R thCS Mounting surface, smooth and greased °C/W Typical thermal resistance, case to heatsink 0.24 6.2 g 0.22 oz. minimum 6 (5) maximum 12 (10) kgf . cm (lbf . in) Approximate weight Mounting torque Case style TO-247 AB Marking device MBR6060PT Ordering Information Table Device code www.nellsemi.com MBR 60 60 PT 1 2 3 4 1 - Schottky MBR series 2 - Current rating (60 = 60A, 30A x 2) 3 - Voltage ratings, 60 = 60V 4 - Circuit configuration, Center tap common cathode, TO-247 AB series package Page 3 of 6 RoHS RoHS MBR6060PT Series SEMICONDUCTOR Nell Semiconductors Fig.2 Typical values of reverse current vs. reverse voltage (Per Leg) 500 1000 Reverse current, l R (mA) lnstantaneous forward current, I F (A) Fig.1 Maximum forward voltage drop characteristics (Per Leg) 100 T J =125° T J =25° 10 1 0 0.2 0.4 0.6 0.8 1.0 T J=1 25 ° T J= 1 0 0 10 ° ° T J= 7 5 1 T J= 5 0 ° 0.1 T J= 2 5 ° 0.01 0.001 0 1.2 6 12 18 24 30 36 42 48 54 Reverse voltage, V R (V) Fig.3 Typical junction capacitance vs. reverse voltage (Per Leg) Fig.4 Maximum allowable case temperature vs. average forward current (Per Leg) Allowable case temperature ( ° C) 1000 TJ = 2 5 ° 100 0 10 20 30 40 150 140 DC 130 Square wave (D = 0.50) 100% Rated V R applied 120 110 See note (1) 100 50 0 5 10 15 20 25 30 35 40 Average forward current, l F(AV) (A) Reverse voltage, V R (V) Fig.5 Maximum thermal impedance R th(j-c) characteristics (Per Leg) Thermal lmpedance, R th(j-c) (°C/W) 60 Forward voltage drop, V FM (V) 10000 Junction capacitance, C T (pF) T J=1 50 ° 100 10 1 P DM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty Factor D =t 1 /t 2 2.Peak T J = PDM x R th(j-c) +T C 0.01 0.1 Rectangular pulse duration, t 1 (s) www.nellsemi.com Page 4 of 6 1 10 100 45 MBR6060PT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Fig.7 Maximum non-repetitive peak worward surge current (Per Leg) Fig.6 Forward power loss characteristics (Per Leg) Non-repetitive peak forward surge current, l FSM (A) Average power loss (W) 30 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 25 20 15 RMS limit 10 DC 5 0 0 5 10 15 20 25 30 35 45 40 400 At any rated load condition and with rated V RRM applied following surge 300 200 100 0 10 1 Average forward current, l F(AV) (A) Number of cycles at 60Hz Fig.8 Unclamped inductive test circuit L D.U.T. Rg = 25Ω Current monitor High-speed switch IRF460B Freewheel diode 40FD04 Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6); Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = 100% Rated V R www.nellsemi.com Page 5 of 6 + V d = 25V 100 MBR6060PT Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.138) 3.81 (0.150) 1 4.50 (0.177)Max 2 Anode 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) 3 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) (TYP.) 5.45 (0.215) 5.45 (0.215) 2.21 (0.087) 2.59 (0.102) CASE PIN 2 All dimensions in millimeters (inches) www.nellsemi.com Page 6 of 6 PIN 1 PIN 3