RoHS RoHS NKT55A/NKH55A Series SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 60A (ADD-A-PAK Power Modules) 80 3 15 20 20 ADD-A-PAK 15 92 68 3-M5 SCREWS 4-2.8x0.8 18 FEATURES 31 • Electrically isolated by DBC ceramic (AI 2O3) 29.5 • High voltage 5 6 • 3000 V RMS isolating voltage • Industrial standard package • High surge capability • Planar SCR chips All dimensions in millimeters • Modules uses high voltage power thyristors/diodes in two basic configurations • Simple mounting • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS (6) (7) NKT • DC motor control and drives (5) (4) • Battery charges • Welders • Power converters NKH • Lighting control (5) (4) • Heat and temperature control PRODUCT SUMMARY 60 A IT(AV) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUE UNITS 60 A IT(AV) 85 °C IT(RMS) 85 °C 94 50 Hz 1250 60 Hz 1313 50 Hz 7.81 60 Hz 7.13 ITSM /IFSM I2t I2√t A kA2s 78.1 kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 21 5.6 5 4 13.6 7 2 6 1 2-Ø6.4 RoHS RoHS NKT55A/NKH55A Series SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 NKT55..A NKH55..A 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 IRRM /I DRM AT 125 °C mA 8 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C Maximum peak, one-cycle, on-state non-repetitive surge current ITSM t = 10 ms t = 8.3 ms No voltage reapplied I 2t t = 8.3 ms 60 A °C 94 t = 8.3 ms A 1313 Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms UNITS 85 1250 t = 10 ms Maximum I 2t for fusing VALUE 7.81 7.13 kA2s 5.46 4.97 Maximum I 2√t for fusing 2 I √t t = 0.1 ms to 10 ms, no voltage reapplied 78.1 Maximum on-state voltage drop VTM ITM =165A , TJ = 25 °C, 180° conduction 1.6 Maximum forward voltage drop VFM IFM =165A , TJ = 25 °C, 180° conduction 1.3 kA2√s V Maximum holding current IH Anode supply = 6 V,resistive load, TJ = 25 °C 150 Maximum latching current IL Anode supply = 6 V resistive load, TJ = 25 °C 400 SYMBOL TEST CONDITIONS mA BLOCKING PARAMETER Maximum peak reverse and off-state leakage current IRRM IDRM TJ = 125 °C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM www.nellsemi.com Page 2 of 4 VALUES UNITS 8 mA 2500 (1min) 3000 (1s) V 1000 V/μs NKT55A/NKH55A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak gate current Maximum peak negative gate voltage - VGM 3 t p ≤ 5 ms, TJ = TJ maximum UNITS W A 10 V Maximum required DC gate voltage to trigger VGT 0.7~1.5 Anode supply = 6 V, resistive load; Ra = 1 Ω TJ = 25 °C Maximum required DC I GT gate current to trigger Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 20~100 mA 0.25 V 10 mA 150 A/μs TJ = TJ maximum, 66.7% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to ca se per junction RthJC DC operation 0.53 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.146 °C °C/W AAP to heatsink, M6 Mounting torque ± 10 % busbar to AAP, M5 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Approximate weight 4 g 4.23 oz. ORDERING INFORMATION TABLE Device code NKT 55 1 2 / 16 A 3 4 1 - Module type: NKT for (Thyristor + Thyristor) module NKH for (Thyristor + Diode) module 2 - Current rating: IT(AV) 3 - Voltage code x 100 = V RRM 4 - Assembly type,”A” for soldering type Page 3 of 4 N.m 120 ADD-A-PAK Case style www.nellsemi.com UNITS RoHS RoHS NKT55A/NKH55A Series SEMICONDUCTOR Nell High Power Products Fig.1 Peak On-state Voltage vs. Peak On-state Current Max.Junction To case Thermal impedance (°C/W) Peak On-state voltage (V) 3.6 Fig.2 Max. Junction To case Thermal Impedance Vs. Time 3.2 T J = 125°C 2.8 2.4 2 1.6 1.2 0.8 10 100 0.6 0.5 0.4 0.3 0.2 0.1 0 1000 0.001 0.01 0.1 Peak On-state current (A) Time (s) Fig.3 Power Dissipation Vs. Average On-state Current Fig.4 Case Temperature Vs. Average O n-state Current 120 140 180° 100 120° 180 0 90° Conduction Angle 80 60° 30° 60 40 20 Max. Case Temperature (°C) Max. Power Dissipation (W) 10 1 120 180 0 100 Conduction Angle 80 60 40 120° 90° 60° 30° 20 180° 0 0 20 10 30 40 50 60 70 0 0 30 60 120 90 Average On-state Current Average On-state Current (A) Fig.5 Surge On-state Current Vs. Cycles Fig.6 Gate characteristics 2 1.2 Peak Forward Gate Voltage (10V) 1 0.8 0.6 10¹ Av er 5 2 ag Pe Po ak we Ga e r ( te G 10 at w) e Po we r( 3w ) Peak Gate Current (3A) Gate voltage (V) Surge On-state current (KA) 1.4 10° 5 125°C 25°C -30°C 2 0.4 Maximum Gate Voltage that will not trigger any unit 0.2 1 10 100 Time(cycles) www.nellsemi.com 10¯¹ 10¹ 2 5 10² 2 5 10³ Gate current (mA) Page 4 of 4 2 5