KBPC35

KBPC35
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Single-Phase Bridge Rectifier, 35A
KBPC3506 Thru KBPC3512
FEATURES
UL recognition file number E320098
Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
High surge current capability
Low thermal resistance
Solder dip 260°C, 40s
Compliant to RoHS
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for power supply, home appliances,
office equipment, industrial automation applications.
MECHANICAL DATA
Case: KBPC, KBPC-W
Epoxy meets UL 94 V-O flammability rating
Terminals: Nickel plated on faston lugs or silver plated on
wire leads,solderable per J-STD-002 and
JESD22-B102. Suffix letter “W” added to
indicate wire leads(e.g. KBPC3506W).
Polarity: As marked
Mounting Torque: 20 inches-lbs. max. (M5 screw)
Weight: 21g (0.74 ozs)
KBPC-W
~
~
+
KBPC
28.6
28.6
18.1
18.1
18.1
Ø5.3 28.6
11.4
-
16.6
28.6 14.3
Ø5.3
12.2
16.6
1.0(x4)
0.8
6.35
Ø2.4
32~34
20
11.0
11.0
All dimensions in inches (millimeters)
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Page 1 of 3
KBPC35
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
PRIMARY CHARACTERRISTICS
IF(AV)
35A
V RRM
600V to 1200V
I FSM
400A
IR
5 µA
VF
1.1V
T J max.
150ºC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
KBPC35
PARAMETER
UNIT
SYMBOL
06
08
10
12
Maximum repetitive peak reverse voltage
V RRM
600
800
1000
1200
V
Maximum RMS voltage
V RMS
420
560
700
840
V
Maximum DC blocking voltage
V DC
600
800
1000
1200
V
Maximum average forward rectified output current (Fig.1)
I F(AV)
35
A
I FSM
400
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
I 2t
660
A 2s
RMS isolation voltage from case to leads
V ISO
2500
V
TJ
-40 to 150
ºC
T STG
-25 to 125
ºC
Peak forward surge current single sine-wave superimposed on
rated load
Operating junction storage temperature range
Storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TEST
CONDITIONS
SYMBOL
Maximum instantaneous forward drop per diode
I F = 17.5A
VF
Maximum reverse DC current at rated DC blocking
T A = 25°C
PARAMETER
voltage per diode
T A = 150°C
Typical junction capacitance per diode
4V, 1MHz
KBPC35
06
08
10
12
1.1
V
5
IR
UNIT
µA
3000
CJ
pF
300
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
KBPC35
PARAMETER
SYMBOL
Typical thermal resistance
R θJC (1)
UNIT
06
08
10
1.4
12
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
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Page 2 of 3
KBPC35
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum instantaneous forward
voltage per leg
Fig.2 Maximum output rectified current
50
Average forward current (A)
Forward current I F , (A)
100
10
1.0
0.1
T j = 25ºC
Pulse Width = 300µs
0.01
40
30
20
10
Resistive or
lnductive load
0
0
0.2 0.4
0.6 0.8
1.0 1.2
1.4 1.6
1.8
Forward voltage V F , (V)
500
Single Half-Sine Wave
(JEDEC Method)
400
300
200
100
T j = 150ºC
0
1
10
100
Cycles @ 50Hz
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0
50
100
Case temperature (°C)
Fig.3 Maximum non-repetitive peak-forward
surge current per leg
Peak forward surge current, (A)
Mounted on a
220x220x50 mm
AL plate heatsink
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