NP505W Series SEMICONDUCTOR PASSIVATED ASSEMBLED CIRCUIT ELEMENTS 50 A Features 1. Electrically isolated base plate 2. Voltage rating up to 1600V 3. Glass passivated junctions for greater reliability 4. High dynamic characteristics 5. Simplified mechanical design and assembly 6. Wide choice of circuit configqurations Ordering code NP 50 5 W (1) (2) (3) (4) (1) For Passivated Assembled Modules (2) Maximum average forward current , A (3) 1 = 400V : 2 = 800V : 3 = 1000V : 4 = 1200V : 5=1600V G1 (4) Basic series AC1 AC1 G1 AC2 G2 + AC2 G2 (-) (+) Electrical Characteristics Parameter Condition I T(AV) Max. Average on-state current 180 half sine wave , 50 Hz Single side cooled , Tc =85 C I FSM Non-repetitive on-state or forward current t=10ms V RRM V DRM Max. repetitive peak reverse voltage Max. Value 50 600 400 to 1600 I RRM IDRM Repetitive peak reverse current I TSM Max. peak, one-cycle,on-state non-repetitive surge current 2 Max. Permissible surge energy 900 V TM Max. Forward voltage drop 1.4 V T(TO) Value of threshold voltage 0.83 r t1 On-state slope resistance 9.61 I GD Max. Required DC gate current to trigger V GT Max. Required DC gate voltage to trigger I t IH V R = V RRM t=10ms 10 715 60 T j =25 C Max. Holding current 2 130 Max. Gate voltage which will not trigger any devices At 67% V DRM 0.20 d v/dt Critical rate of rise of off-state voltage V DM = 0.67 V DRM 200 d i/dt Max. Rate of rise of turned-on current Gate drive 20V , 20 Ω , t r < - 0.5 us 200 Tstg Storage temperature range V GD R th(J-C) Wt T Max. Thermal resistance -40 to 125 Single side cooled Approximate weight Module to heatsink ( M 6 ) 1.05 58 A mounting compound is recommened. Torque should be rechecked after a period of 3 hours. 4 RoHS RoHS SEMICONDUCTOR NP505W Series RoHS RoHS