110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Phase Control Thyristors (Stud version, 110A) FEATURES High current and high surge capability Hermetic ceramic housing Planar SCR chips Compliant to RoHS Designed and qualified for multiple level TYPICAL APPLICATIONS DC motor control and drives TO-209AC (TO-94) Battery chargers AC controllers Controlled DC power supplies PRODUCT SUMMARY I T(AV) 110A MAJOR RATINGS AND CHARACTERISTICS SYMBOL I T(AV) VALUE UNITS 90°C 110 A I T(RMS) 90°C 173 50 Hz 2250 60 Hz 2360 50 Hz 25.3 60 Hz 23.1 CHARACTERISTICS I TSM /l FSM l 2t I 2√t A kA 2 s 253 kA2√s 400 to 1600 V V DRM /V RRM Range tq typical 110 µS TJ Range -40 to 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 110PT..S VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 www.nellsemi.com Page 1 of 8 IRRM /I DRM AT 150 °C mA 20 110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature I T(AV) I T(RMS) Maximum RMS on-state current TEST CONDITIONS I TSM non-reptitive surge current t = 8.3 ms t = 8.3 ms t = 10 ms t = 8.3 ms I 2t Maximum I 2√t for fusing A 90 ºC 173 No voltage reapplied 2250 100%V RRM reapplied 1890 No voltage reapplied 2360 Sine half wave, 1980 initial T J = T J maximum 25.3 23.1 100%V RRM reapplied 17.9 t = 0.1 to 10 ms, no voltage reapplied 253 t = 10 ms t = 8.3 ms l 2√t 110 180° conduction, half sine wave, 50Hz, T C =90°C t = 10 ms Maximum l 2 t for fusing UNIT 180° conduction, half sine wave, 50Hz t = 10 ms Maximum peak, one-cycle, on-state VALUES V T(TO)1 (16.7% x π x I T(AV) ) < I < π x I T(AV) , T J = T J maximum 0.80 High level value of threshold voltage V T(TO)2 I > π x I T(AV) , T J = T J maximum 1.05 kA 2√s V Low level value of on-state slope resistance r t1 (16.7% x π x I T(AV) ) < I < π x I T(AV) , T J = T J maximum 2.10 High level value of on-state slope resistance r t2 I > π x I T(AV) , T J = T J maximum 1.75 V TM kA 2 s 16.3 Low level value of threshold voltage Maximum on-state voltage drop A mΩ I TM = 350A, T J = 25°C, 180°C conduction 1.6 Maximum holding current lH Anode supply = 6V, resistive load T J = 25°C 150 Maximum latching current lL Anode supply = 6V, resistive load T J = 25°C 400 V mA BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current l RRM l DRM T J = 150°C Maximum critical rate of rise of off-state voltage dV/dt T J = T J maximum, exponential to 67% rated V DRM VALUES UNITS 20 mA 1000 V/μs Voltage code UNITS SWITCHING PARAMETER Typical delay time Typical turn-off time www.nellsemi.com SYMBOL TEST CONDITIONS td Gate current 1A, dl g /dt = 1A/μs V d = 67% V DRM, T J = 25°C tq l TM = 50A, T J = T J maximum, dl/dt = -5 A/μs V R = 50V, dV/dt = 20 V/μs, gate 0V, 25Ω Page 2 of 8 1 μs 110 110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power SYMBOL Max. t p ≤ 5ms, T J = T J maximum 12 P G(AV) f = 50Hz, T J = T J maximum 3 l GM Maximum peak positive gate voltage +V GM Maximum peak negative gate voltage -V GM t p ≤ 5ms, T J = T J maximum UNITS W A 3 20 10 V V GT T J = -40°C 1.60 - T J = 25°C 1.0 1.5 0.7 - 140 - T J = 25°C 60 120 T J = 150°C 30 - Anode supply = 12V, resistive load; R L = 30Ω T J = 150°C T J = -40°C Maximum required DC gate current to trigger VALUES TYP. P GM Maximum peak positive gate current Maximum required DC gate voltage to trigger TEST CONDITIONS l GT Maximum gate voltage that will not trigger V GD Maximum gate current that will not trigger l GD Maximum rate of rise of turmed-on current dl/dt 0.25 mA V T J = T J maximum, 66.7% V DRM applied T J = 25°C, l GM = 1.5A, t r ≤ 0.5 µs 10 mA 150 A/µs VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TJ Maximum junction operating temperature range T stg TEST CONDITIONS -40 to 150 °C -40 to 150 Maximum thermal resistance, junction to case per junction R thJC DC operation Maximum thermal resistance, case to heatsink per module R thCS Mounting surface, smooth, flat and greased 0.25 °C/W 0.1 Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) Mounting torque, ±10% N.m (lbf . in) 115 g 4.06 oz. Approximate weight Case style www.nellsemi.com See dimensions ( at the end of datasheet ) Page 3 of 8 TO-209AC (TO-94) 110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ∆RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION 180° 0.043 0.031 120° 90° 0.052 0.066 0.096 0.053 0.071 0.101 0.167 0.169 60° 30° TEST CONDUCTIONS RECTANGULAR CONDUCTION UNITS T J = T J maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC ORDERING INFORMATION TABLE Device code 110 PT 16 S M 1 2 3 4 5 1 - Maximum average on-state current, I T(AV) 2 - For phase control thyristors 3 - Voltage code, V DRM /V RRM = code x 100 4 - Stud version - None for standard device, ½” - 20UNF 5 ″M ″ for metric device, M12 x 1.5 ″S″ for short flexible lead Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics 150 150 R thJC (DC) = 0.25 K/W 140 140 Ø Conduction angle 130 120 110 100 90 80 30°C 0 20 40 60°C 60 90°C 120°C 100 Conduction period 120 110 100 DC 90 30°C 120°C 60°C 180°C 90°C 120 Average on-state current (A) www.nellsemi.com Ø 130 80 180°C 80 Maximum allowable case temperature (°C) Maximum allowable case temperature (°C) R thJC (DC) = 0.25 K/W 70 0 20 40 60 80 100 120 140 160 Average on-state current (A) Page 4 of 8 180 110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.3 On-State power loss characteristics 160 Maximum average on-state power loss (W) 40 Conduction angle 20 T J =150 ºC 0 0 20 40 60 80 100 80 1.5 60 /W K/ W 2 K/ 40 W 4 K /W 5 K /W 20 0 120 W R Ø 1K 100 K/ -∆ 60 8 W 80 0. K/ RMS limit 30°C K/ W 120 3 60°C 100 6 0. 90°C 0. = 120°C 120 140 A 180°C hS 140 Rt Maximum average on-state power loss (W) 160 0 20 40 60 80 100 120 140 120 140 Maximum allowable ambient temperature (°C) Average on-state current (A) Fig.4 On-State power loss characteristics 220 200 Maximum average on-state power loss (W) Maximum average on-state power loss (W) 220 DC 180 180°C 160 120°C 90°C 140 60°C 120 RMS limit 30°C 100 80 60 Ø 40 Conduction period 20 T J =150 ºC 0 0 20 40 60 80 200 th 140 0 .6 120 0 .8 100 1K 80 1.5 = 0. 3 K/ W K/ -∆ R W K /W /W K/ W 2 K /W 60 40 4 K /W 20 5 K /W 0 20 40 60 80 100 Maximum allowable ambient temperature (°C) Average on-state current (A) Fig.5 Maximum non-repetitive surge current Fig.6 Maximum non-repetitive surge current 2500 2000 Maximum Non Repetitive Surge Current At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 150°C 1800 Peak half sine wave On-state current (A) Peak half sine wave On-state current (A) SA 160 0 100 120 140 160 180 R 180 @60 Hz 0.0083 s @50 Hz 0.0100 s 1600 1400 1200 1000 800 1 10 100 Number of equal amplitude half (A) www.nellsemi.com Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T J = 150°C 2000 No Voltage Reapplied @ 50Hz Reted VRRM Reapplied @ 50Hz 1500 1000 500 0.01 0.1 1 Average on-state current (A) Page 5 of 8 10 110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.7 On-state voltage drop characteristics lnstantaneous on-state current (A) 10000 T J =25 ºC 1000 T J =150 ºC 100 10 1 0 1 3 2 5 4 lnstantaneous on-state voltage (A) Fig.8 Thermal lmpedance Z thJC characteristic Transient thermal lmpedance , Z thJC (K/W) 1 Steady state value R thJC = 0.25 K/W (DC operation) 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 10 1 Square wave pulse duration (s) 100 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30Ω t r ≤ 0.5µs, t p ≥ 6µs b) Recommended load line for ≤ 30% rated di/dt : 15V, 40Ω t r ≤ 1µs, t p ≥ 6µs (2) P GM = 30W, t p = 2ms (3) P GM = 60W, t p = 1ms (a) (4) P GM = 200W, t p = 300µs (b) T J =40 ºC V GD (1) P GM = 12W, t p = 5ms T J =25 ºC 1 T J =150 ºC lnstantaneous gate voltage (V) Fig.9 Gate characteristics (1) (2) (3) (4) Frequency limited by P G(AV) 0.1 0.001 0.01 0.1 1 10 lnstantaneous gate voltage (A) www.nellsemi.com Page 6 of 8 100 1000 110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products www.nellsemi.com 200 (7.87) Min 160 (6.30) Min Ceramic Housing Page 7 of 8 110PT Series SEMICONDUCTOR RoHS RoHS Nell High Power Products www.nellsemi.com 130 (5.12) Min 100 (3.94) Min Ceramic housing (for short flexible lead) Page 8 of 8