BGY888 - Octopart

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGY888
860 MHz, 34 dB gain push-pull
amplifier
Product specification
Supersedes data of 1999 Mar 30
2001 Oct 25
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
FEATURES
BGY888
PINNING SOT115J
• Excellent linearity
PIN
• Extremely low noise
DESCRIPTION
1
• High gain
input
2, 3
• Excellent return loss properties.
common
5
+VB
7, 8
APPLICATIONS
common
9
output
• Single module line extender in CATV systems operating
over a frequency range of 40 to 860 MHz.
handbook, halfpage
1
DESCRIPTION
Hybrid high dynamic range amplifier module operating
with a voltage supply of 24 V in a SOT115J package. The
high gain module consists of two cascaded stages both in
cascode configuration.
2
3
5
7
8
9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
CONDITIONS
power gain
total current consumption (DC)
MIN.
MAX.
UNIT
f = 50 MHz
33.5
34.5
dB
f = 860 MHz
34
−
dB
VB = 24 V
−
340
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
−
55
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2001 Oct 25
2
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
BGY888
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
33.5
34
34.5
dB
f = 860 MHz
34
35
−
dB
SL
slope cable equivalent
f = 40 to 860 MHz
0.5
1.1
2.5
dB
FL
flatness of frequency response
f = 40 to 860 MHz
−
±0.2
±0.5
dB
S11
input return losses
S22
output return losses
f = 40 to 80 MHz
20
25
−
dB
f = 80 to 160 MHz
18.5
28
−
dB
f = 160 to 320 MHz
17
28
−
dB
f = 320 to 640 MHz
15.5
21
−
dB
f = 640 to 860 MHz
14
18.5
−
dB
f = 40 to 80 MHz
20
25.5
−
dB
f = 80 to 160 MHz
18.5
28.5
−
dB
f = 160 to 320 MHz
17
26.5
−
dB
f = 320 to 640 MHz
15.5
20.5
−
dB
f = 640 to 860 MHz
14
21
−
dB
S21
phase response
f = 50 MHz
135
−
225
deg
CTB
composite triple beat
49 channels flat; Vo = 44 dBmV;
measured at 859.25 MHz
−
−63.5
−60
dB
Xmod
cross modulation
49 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
−
−63
−59
dB
CSO
composite second order
distortion
49 channels flat; Vo = 44 dBmV;
measured at 860.5 MHz
−
−64
−55
dB
d2
second order distortion
note 1
−
−74
−65
dB
Vo
output voltage
dim = −60 dB; note 2
58
60
−
dBmV
F
noise figure
Itot
total current consumption (DC)
f = 50 MHz
−
4
4.5
dB
f = 550 MHz
−
−
5
dB
f = 600 MHz
−
−
5
dB
f = 650 MHz
−
−
5.5
dB
f = 750 MHz
−
−
6
dB
f = 860 MHz
−
5.5
7
dB
note 3
−
325
340
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo−6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
3
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 2
BGY888
Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 50 MHz
33.5
34
34.5
dB
f = 860 MHz
34
35
−
dB
f = 40 to 860 MHz
0.5
1.1
2.5
dB
SL
slope cable equivalent
FL
flatness of frequency response
f = 40 to 860 MHz
−
±0.2
±0.5
dB
S11
input return losses
f = 40 to 80 MHz
20
25
−
dB
f = 80 to 160 MHz
18.5
28
−
dB
f = 160 to 320 MHz
17
28
−
dB
f = 320 to 640 MHz
15.5
21
−
dB
f = 640 to 860 MHz
14
18.5
−
dB
S22
output return losses
f = 40 to 80 MHz
20
25.5
−
dB
f = 80 to 160 MHz
18.5
28.5
−
dB
f = 160 to 320 MHz
17
26.5
−
dB
f = 320 to 640 MHz
15.5
20.5
−
dB
f = 640 to 860 MHz
14
21
−
dB
S21
phase response
f = 50 MHz
135
−
225
deg
CTB
composite triple beat
129 channels flat; Vo = 44 dBmV;
measured at 859.25 MHz
−
−47.5
−46
dB
Xmod
cross modulation
129 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
−
−53.5
−50
dB
CSO
composite second order
distortion
129 channels flat; Vo = 44 dBmV;
measured at 860.5 MHz
−
−56
−48
dB
d2
second order distortion
note 1
−
−74
−65
dB
Vo
output voltage
dim = −60 dB; note 2
58
60
−
dBmV
F
noise figure
see Table 1
−
−
−
dB
Itot
total current consumption (DC)
note 3
−
325
340
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
4
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 3
BGY888
Bandwidth 40 to 750 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 50 MHz
33.5
34
34.5
dB
f = 750 MHz
34
−
−
dB
f = 40 to 750 MHz
0.2
−
2.2
dB
SL
slope cable equivalent
FL
flatness of frequency response
f = 40 to 750 MHz
−
−
±0.45
dB
S11
input return losses
f = 40 to 80 MHz
20
25
−
dB
f = 80 to 160 MHz
18.5
28
−
dB
f = 160 to 320 MHz
17
28
−
dB
f = 320 to 640 MHz
15.5
21
−
dB
f = 640 to 750 MHz
14
18.5
−
dB
S22
output return losses
f = 40 to 80 MHz
20
25.5
−
dB
f = 80 to 160 MHz
18.5
28.5
−
dB
f = 160 to 320 MHz
17
26.5
−
dB
f = 320 to 640 MHz
15.5
20.5
−
dB
f = 640 to 750 MHz
14
21
−
dB
S21
phase response
f = 50 MHz
135
−
225
deg
CTB
composite triple beat
110 channels flat; Vo = 44 dBmV;
measured at 745.25 MHz
−
−52.5
−50
dB
Xmod
cross modulation
110 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
−
−55.5
−51
dB
CSO
composite second order
distortion
110 channels flat; Vo = 44 dBmV;
measured at 746.5 MHz
−
−61.5
−53
dB
d2
second order distortion
note 1
−
−
−65
dB
Vo
output voltage
dim = −60 dB; note 2
59
−
−
dBmV
F
noise figure
see Table 1
−
−
−
dB
Itot
total current consumption (DC)
note 3
−
325
340
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
fq = 747.25 MHz; Vq = Vo−6 dB;
fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
5
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
Table 4
BGY888
Bandwidth 40 to 600 MHz; VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 50 MHz
33.5
34
34.5
dB
f = 600 MHz
34
−
−
dB
f = 40 to 600 MHz
0
−
2
dB
SL
slope cable equivalent
FL
flatness of frequency response
f = 40 to 600 MHz
−
−
±0.35
dB
S11
input return losses
f = 40 to 80 MHz
20
25
−
dB
f = 80 to 160 MHz
18.5
28
−
dB
f = 160 to 320 MHz
17
28
−
dB
f = 320 to 600 MHz
16
21
−
dB
f = 40 to 80 MHz
20
25.5
−
dB
S22
output return losses
f = 80 to 160 MHz
18.5
28.5
−
dB
f = 160 to 320 MHz
17
26.5
−
dB
f = 320 to 600 MHz
16
20.5
−
dB
S21
phase response
f = 50MHz
135
−
225
deg
CTB
composite triple beat
85 channels flat; Vo = 44 dBmV;
measured at 595.25 MHz
−
−56.5
−55
dB
Xmod
cross modulation
85 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
−
−58
−54
dB
CSO
composite second order
distortion
85 channels flat; Vo = 44 dBmV;
measured at 596.5 MHz
−
−69.5
−56
dB
d2
second order distortion
note 1
−
−
−68
dB
Vo
output voltage
dim = −60 dB; note 2
61
−
−
dBmV
F
noise figure (DC)
see Table 1
−
−
−
dB
Itot
total current consumption
note 3
−
325
340
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp = Vo;
fq = 597.25 MHz; Vq = Vo −6 dB;
fr = 599.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 588.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
6
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
BGY888
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
y M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
min.
p
Q
max.
8.8
4.15
3.85
2.4
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
SOT115J
2001 Oct 25
q
7
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
BGY888
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 25
8
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
NOTES
2001 Oct 25
9
BGY888
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
NOTES
2001 Oct 25
10
BGY888
Philips Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
NOTES
2001 Oct 25
11
BGY888
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/05/pp12
Date of release: 2001
Oct 25
Document order number:
9397 750 08823