DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of September 1992 1998 Jul 02 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control andbook, halfpage 4 3 • Good thermal stability • Withstands full load mismatch. d APPLICATIONS g • Designed for industrial and military applications in the HF/VHF frequency range. MBB072 1 s 2 DESCRIPTION MLA876 Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline (SOT121B) and symbol. CAUTION A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING PINNING Product and environmental safety - toxic materials PIN DESCRIPTION 1 drain 2 source 3 gate 4 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION SSB class-AB CW class-B 1998 Jul 02 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) d3 (dB) d5 (dB) 28 50 150 (PEP) >20 >35 <−30 <−30 108 50 150 typ. 19 typ. 70 − − 2 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V VGS gate-source voltage − ±20 V ID drain current (DC) − 16 A Ptot total power dissipation − 220 W Tstg storage temperature Tmb ≤ 25 °C −65 150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base max. 0.8 K/W Rth mb-h thermal resistance from mounting base to heatsink max. 0.2 K/W MRA906 102 handbook, halfpage MGP089 300 handbook, halfpage ID (A) Ptot (W) 10 (1) 200 (2) (1) (2) 1 10−1 100 1 10 102 VDS (V) 0 103 0 (1) Current in this area may be limited by RDSon. (2) Tmb = 25 °C. 100 Th (°C) (1) Short-time operation during mismatch. (2) Continuous operation. Fig.2 DC SOAR. 1998 Jul 02 50 Fig.3 Power derating curves. 3 150 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 50 mA; VGS = 0 110 − − V IDSS drain-source leakage current VGS = 0; VDS = 50 V − − 2.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V ∆VGS gate-source voltage difference of matched pairs ID = 50 mA; VDS = 10 V − − 100 mV gfs forward transconductance ID = 5 A; VDS = 10 V 4.5 6.2 − S RDSon drain-source on-state resistance ID = 5 A; VGS = 10 V − 0.2 0.3 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 25 − A Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 480 − pF Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 190 − pF Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 14 − pF MGP090 0 MGP091 30 handbook, halfpage handbook, halfpage T.C. ID (A) (mV/K) −1 20 −2 −3 10 −4 −5 10−2 10−1 0 1 ID (A) 0 10 5 10 VGS (V) 15 VDS = 10 V; valid for Th = 25 to 70 °C. VDS = 10 V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 1998 Jul 02 Fig.5 4 Drain current as a function of gate-source voltage; typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP092 400 MBK408 1200 handbook, halfpage handbook, halfpage RDSon C (pF) (mΩ) 800 300 Cis 400 200 Cos 0 100 0 50 100 Tj (°C) 0 150 ID = 5 A; VGS = 10 V. Fig.6 Fig.7 MGP093 300 handbook, halfpage Crs (pF) 200 100 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. 1998 Jul 02 40 VDS (V) 60 VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature; typical values. 0 20 5 Input and output capacitance as functions of drain-source voltage; typical values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB test circuit (see Fig.13). Th = 25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) d3 (dB) (note 1) d5 (dB) (note 1) SSB, class-AB 28 50 0.7 20 to 150 (PEP) >20 typ. 35 >35 typ. 40 <−30 typ. −35 <−30 typ. −38 Note 1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB. Ruggedness in class-AB operation The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: f = 28 MHz; VDS = 50 V at rated output power. MGP096 30 MGP094 60 handbook, halfpage handbook, halfpage Gp (dB) ηD (%) 20 40 10 20 0 0 0 100 PL (W) PEP 200 0 100 PL (W) PEP 200 Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.9 Fig.10 Two tone efficiency as a function of load power; typical values. Power gain as a function of load power; typical values. 1998 Jul 02 6 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP097 −20 MGP098 −20 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) −30 −30 −40 −40 −50 −50 −60 −60 0 100 0 200 PL (W) PEP 100 PL (W) PEP 200 Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.11 Third order intermodulation distortion as a function of load power; typical values. Fig.12 Fifth order intermodulation distortion as a function of load power; typical values. handbook, full pagewidth C9 C1 C12 L6 C10 C11 C2 C4 R1 C15 L4 R2 C13 C5 C6 R5 C7 R3 R4 L5 C8 +VG +VD MGP095 Fig.13 Test circuit for class-AB operation at 28 MHz. 1998 Jul 02 C14 L2 L1 input 50 Ω L3 D.U.T. C3 7 output 50 Ω Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 List of components class-AB test circuit (see Fig.13) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C4, C13, C14 film dielectric trimmer 7 to 100 pF 2222 809 07015 C2 multilayer ceramic chip capacitor (note 1) 56 pF C3, C11 multilayer ceramic chip capacitor (note 1) 62 pF C5, C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C7 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C8 electrolytic capacitor 2.2 µF, 63 V C9, C10 multilayer ceramic chip capacitor (note 1) 20 pF C12 multilayer ceramic chip capacitor (note 1) 100 pF C15 multilayer ceramic chip capacitor (note 1) 150 pF L1 5 turns enamelled 0.7 mm copper wire 133 nH length 4.5 mm; int. dia. 6 mm; leads 2 × 5 mm L2, L3 stripline (note 2) 41.1 Ω length 13 × 6 mm L4 7 turns enamelled 1.5 mm copper wire 236 nH length 12.5 mm; int. dia. 8 mm; leads 2 × 5 mm L5 grade 3B Ferroxcube wideband HF choke L6 5 turns enamelled 2 mm copper wire 170 nH R1, R2 metal film resistor 10 Ω, 1 W R2 metal film resistor 10 kΩ, 0.4 W R3 metal film resistor 1 MΩ, 0.4 W R5 metal film resistor 10 kΩ, 1 W 4312 020 36642 length 11.5 mm; int. dia. 8 mm; leads 2 × 5 mm Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1.6 mm. 1998 Jul 02 8 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP099 10 MGP100 30 handbook, halfpage handbook, halfpage Zi (Ω) Gp (dB) ri 5 20 0 10 xi −5 0 0 10 20 f (MHz) 30 0 10 20 f (MHz) 30 Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω. Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Power gain as a function of frequency; typical values. 1998 Jul 02 9 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in CW operation in a common source class-B test circuit (see Fig.19). Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 15.8 Ω unless otherwise specified. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) 108 50 0.1 150 typ. 19 typ. 70 MGP101 30 MGP102 100 handbook, halfpage handbook, halfpage Gp (dB) ηD (%) 20 50 10 0 0 0 100 PL (W) 200 0 100 PL (W) 200 Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 Ω; f = 108 MHz. Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 Ω; f = 108 MHz. Fig.16 Power gain as a function of load power; typical values. Fig.17 Two tone efficiency as a function of load power; typical values. 1998 Jul 02 10 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP103 200 handbook, halfpage PL (W) 100 0 0 1 2 3 PIN (W) 4 Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 Ω; f = 108 MHz. Fig.18 Load power as a function of input power; typical values. C17 handbook, full pagewidth C1 C3 L2 L1 input 50 Ω C2 D.U.T. BLF177 C4 L4 C13 L8 C15 C14 C16 L7 L3 L5 C5 R1 C9 R2 C11 C6 C10 R6 C12 C7 L6 R3 +VD C8 C19 R5 R4 MGP104 Fig.19 Test circuit for class-B operation at 108 MHz. 1998 Jul 02 11 C18 output 50 Ω Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 List of components class-B test circuit (see Fig.19) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C16, C18 film dielectric trimmer 2.5 to 20 pF 2222 809 07004 C3 multilayer ceramic chip capacitor (note 1) 20 pF C4, C5 multilayer ceramic chip capacitor (note 1) 62 pF C6, C7, C9, C10 multilayer ceramic chip capacitor (note 1) 1 nF C8 multilayer ceramic chip capacitor 100 nF C11 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C12 multilayer ceramic chip capacitor 3 × 100 nF 2222 852 47104 C13, C14 multilayer ceramic chip capacitor (note 1) 36 pF C15 multilayer ceramic chip capacitor (note 1) 12 pF C17 multilayer ceramic chip capacitor (note 1) 5.6 pF C19 electrolytic capacitor 4.4 µF, 63 V L1 3 turns enamelled 0.8 mm copper wire 22 nH length 5.5 mm; int. dia. 3 mm; leads 2 × 5 mm L2 stripline (note 2) 64.7 Ω 31 × 3 mm L3, L4 stripline (note 2) 41.1 Ω 10 × 6 mm L5 6 turns enamelled 1.6 mm copper wire 122 nH length 13.8 mm; int. dia. 6 mm; leads 2 × 5 mm L6 grade 3B Ferroxcube wideband HF choke L7 1 turn enamelled 1.6 mm copper wire 16.5 nH int. dia. 9 mm; leads 2 × 5 mm L8 2 turns enamelled 1.6 mm copper wire 34.4 nH length 3.9 mm; int. dia. 6 mm; leads 2 × 5 mm R1, R2 metal film resistor 31.6 Ω, 1 W R3 metal film resistor 1 kΩ, 0.4 W R4 cermet potentiometer 5 kΩ R5 metal film resistor 44.2 Ω, 0.4 W R6 metal film resistor 10 Ω, 1 W 2222 852 47104 2222 030 28478 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 1.6 mm. 1998 Jul 02 12 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 174 handbook, full pagewidth strap strap rivet 70 strap R4 R5 C19 L6 R3 C6 C7 R1 C4 C3 R6 C11 C10 C8 C9 +VD C12 L5 R2 C13 C15 L2 L1 C1 C5 L4 L3 L7 C14 L8 C17 C16 C2 C18 MGP105 Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a direct contact between upper and lower sheets. Fig.20 Component layout for 108 MHz class-B test circuit. 1998 Jul 02 13 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 MGP107 MGP108 4 10 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) 2 8 ri RL 0 6 xi XL −2 4 −4 2 −6 0 100 0 f (MHz) 200 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 Ω. Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 Ω. Fig.21 Input impedance as a function of frequency (series components); typical values. Fig.22 Load impedance as a function of frequency (series components); typical values. MGP109 30 handbook, halfpage Gp (dB) 20 handbook, halfpage 10 Zi ZL MBA379 0 0 100 f (MHz) 200 Class-B operation; VDS = 50 V; IDQ = 0.1 A; PL = 150 W; RGS = 15 Ω. Fig.24 Power gain as a function of frequency; typical values. Fig.23 Definition of transistor impedance. 1998 Jul 02 14 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F q C B U1 c H b L 4 α w2 M C 3 A D1 U2 p U3 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.006 0.219 0.004 OUTLINE VERSION D D1 12.86 12.83 12.59 12.57 F H L p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 7.93 6.32 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.51 1.02 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.02 0.04 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 45° 0.312 0.130 0.249 0.120 REFERENCES IEC JEDEC EIAJ SOT121B 1998 Jul 02 α EUROPEAN PROJECTION ISSUE DATE 97-06-28 15 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jul 02 16 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 NOTES 1998 Jul 02 17 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 NOTES 1998 Jul 02 18 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 NOTES 1998 Jul 02 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125108/00/03/pp20 Date of release: 1998 Jul 02 Document order number: 9397 750 04059