BF992 Silicon N-channel dual gate MOS-FET

BF992
Silicon N-channel dual gate MOS-FET
Rev. 04 — 21 November 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
APPLICATIONS
BF992
PINNING
• VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
PIN
SYMBOL
DESCRIPTION
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
source
d
handbook, halfpage
4
3
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
g2
g1
CAUTION
1
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
2
s,b
Top view
MAM039
Marking code: %MB.
Fig.1
Simplified outline (SOT143B) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
20
V
ID
drain current (DC)
−
40
mA
Ptot
total power dissipation
Tamb = 60 °C
−
200
mW
Yfs
forward transfer admittance
f = 1 kHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
25
−
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
4
−
pF
Crs
reverse transfer capacitance
f = 1 MHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
30
−
fF
F
noise figure
GS = 2 mS; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V; f = 200 MHz
1.2
−
dB
Tj
operating junction temperature
−
150
°C
Rev. 04 - 21 November 2007
2 of 9
NXP Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
20
V
ID
drain current
−
40
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Tamb ≤ 60 °C; see Fig.2; note 1
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
MBL033
handbook, halfpage
200
Ptot max
(mW)
100
0
0
100
Tamb (o C)
200
Fig.2 Power derating curves.
Rev. 04 - 21 November 2007
3 of 9
NXP Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air
VALUE
UNIT
460
K/W
note 1
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-SS = ±10 mA
8
20
V
±V(BR)G2-SS gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-SS = ±10 mA
8
20
V
−V(P)G1-S
gate 1-source cut-off voltage
VG2-S = 4 V; VDS = 10 V; ID = 20 µA
0.2
1.3
V
−V(P)G2-S
gate 2-source cut-off voltage
VG1-S = 0; VDS = 10 V; ID = 20 µA
0.2
1.1
V
±IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = ±7 V
−
25
nA
±IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = ±7 V
−
25
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
20
25
−
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
4
−
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
−
1.7
−
pF
Cos
output capacitance
f = 1 MHz
−
2
−
pF
Crs
reverse transfer capacitance
f = 1 MHz
−
30
40
fF
F
noise figure
f = 200 MHz; GS = 2 mS
−
1.2
−
dB
Rev. 04 - 21 November 2007
4 of 9
NXP Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
MGE797
24
BF992
MGE799
30
handbook,
halfpage
I
handbook, halfpage
D
(mA)
20
ID
(mA)
VG1-S = 0.2 V
0.1 V
16
4V3V
VG2-S = 5 V
20
0V
12
2V
1V
−0.1 V
−0.2 V
8
10
−0.3 V
0V
−0.4 V
−0.5 V
4
−0.6 V
0
−1
0
0
2
4
6
8
10
VDS (V)
12
VG2-S = 4 V; Tj = 25 °C.
0
VG1-S (V)
1
VDS = 10 V; Tj = 25 °C.
Fig.3 Output characteristics; typical values.
MGE798
30
Fig.4 Transfer characteristics; typical values.
MGE800
30
handbook, halfpage
handbook, halfpage
5V
4V
3V
|yfs|
(mS)
Yfs
(mS)
VG2-S =
5V
4V
2V
20
20
3V
10
10
2V
1V
VG2-S = 0 V
1V
0
0
10
ID (mA)
VDS = 10 V; Tj = 25 °C.
Fig.5
0
−1
20
0V
0
VG1-S (V)
1
VDS = 10 V; Tj = 25 °C.
Forward transfer admittance as a function
of drain current; typical values.
Fig.6
Rev. 04 - 21 November 2007
Forward transfer admittance as a function
of gate 1-source voltage; typical values.
5 of 9
NXP Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
MGE794
102
handbook, halfpage
MGE793
10
handbook, halfpage
yis
(mS)
yos
(mS)
bos
10
bis
1
1
gis
gos
10−1
10−1
10−2
10
102
f (MHz)
103
10−2
10
102
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.7
Fig.8
Input admittance as a function of frequency;
typical values.
MGE795
25
handbook, halfpage
Output admittance as a function of
frequency; typical values.
MGE796
120
handbook, halfpage
gfs
Yfs
(mS)
20
103
f (MHz)
yrs
(µS)
80
15
−brs
10
−bfs
40
5
grs
0
10
102
f (MHz)
103
0
10
102
103
f (MHz)
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.9
Fig.10 Reverse transfer admittance as a function
of frequency; typical values.
Forward transfer admittance as a function
of frequency; typical values.
Rev. 04 - 21 November 2007
6 of 9
NXP Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 04 - 21 November 2007
7 of 9
BF992
NXP Semiconductors
Silicon N-channel dual gate MOS-FET
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 21 November 2007
8 of 9
BF992
NXP Semiconductors
Silicon N-channel dual gate MOS-FET
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BF992_N_4
20071121
Product data sheet
-
BF992_3
•
Modifications:
Fig. 1 on page 2; Figure note changed
BF992_3
(9397 750 06013)
19990811
Product specification
-
BF992_2
BF992_2
19960730
Product specification
-
BF992_SF_1
BF992_SF_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 November 2007
Document identifier: BF992_N_4