BLF246B VHF push-pull power MOS transistor

DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D075
BLF246B
VHF push-pull power MOS
transistor
Product specification
Supersedes data of 2000 Feb 04
2001 Oct 10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
BLF246B
PIN CONFIGURATION
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures
excellent reliability.
2
handbook, halfpage
4
6
8
d2
g2
s
g1
APPLICATIONS
d1
Large signal applications in the VHF
frequency range.
1
3
5
7
MBB157
Top view
MBC826
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in an 8-lead
SOT161A balanced flange package
with a ceramic cap. All leads are
isolated from the flange.
PINNING - SOT161A
PIN
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
DESCRIPTION
1
source
2
source
3
drain 1
4
gate 1
5
drain 2
6
gate 2
7
source
8
source
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-AB
2001 Oct 10
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
175
28
60
>14
>55
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±20
V
ID
drain current (DC)
−
8
A
Ptot
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded −
130
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to
mounting base
total device; both sections equally
loaded
1.35
K/W
Rth mb-h
thermal resistance from mounting base total device; both sections equally
to heatsink
loaded
0.25
K/W
MGR738
MRA932
160
handbook, 50
halfpage
handbook, halfpage
ID
(A)
Ptot
(W)
10
120
(2)
(1)
(2)
80
(1)
1
40
10−1
1
10
VDS (V)
0
102
0
40
80
160
Th (°C)
(1) Current in this area may be limited by RDSon.
(2) Tmb = 25 °C.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
2001 Oct 10
120
Fig.3 Power/temperature derating curves.
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 mA
−
65
−
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
2
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
1
µA
VGSth
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
−
4.5
V
gfs
forward transconductance
ID = 1.5 A; VDS = 10 V
1.2
1.8
−
S
RDSon
drain-source on-state resistance
ID = 1.5 A; VGS = 10 V
−
0.4
0.75
Ω
IDSX
on-state drain current
VGS = 10 V; VDS = 10 V
−
10
−
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
125
−
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
75
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
11
−
pF
MGR739
6
T.C.
(mV/K)
4
MGR740
12
handbook, halfpage
handbook, halfpage
Tj = 25 °C
ID
(A)
125 °C
8
2
0
−2
4
−4
−6
10
102
103
ID (mA)
0
104
0
10
VGS (V)
20
VDS = 10 V.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
2001 Oct 10
Fig.5
4
Drain current as a function of gate-source
voltage; typical values per section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
MGR741
MGR742
240
0.8
handbook, halfpage
handbook, halfpage
RDSon
C
(pF)
(Ω)
0.6
180
0.4
120
0.2
60
Cis
Cos
0
0
0
40
80
120
160
0
10
Tj (°C)
VGS = 10 V; ID = 1.5 A.
VGS = 0; f = 1 MHz.
Fig.6
Fig.7
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
MGR743
24
handbook, halfpage
Crs
(pF)
18
12
6
0
0
10
20
30
VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
2001 Oct 10
5
20
30
VDS (V)
40
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
APPLICATION INFORMATION
RF performance in CW operation in a push-pull, common source, class-B circuit. Th = 25 °C; Rth mb-h = 0.25 K/W;
unless otherwise specified.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
175
28
2 × 50
60
ηD
(%)
Gp
(dB)
>14
>55
typ. 19
typ. 65
Ruggedness in class-B operation
The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: VDS = 28 V; f = 175 MHz at rated output power.
MGR745
MGR744
100
25
handbook, halfpage
Gp
(dB)
100
handbook, halfpage
ηD
(%)
Gp
PL
(W)
20
80
80
15
60
60
10
40
40
5
20
20
0
0
ηD
0
0
20
40
60
PL (W)
80
0
0.5
1.0
1.5
2.0
2.5
PIN (W)
Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA;
ZL = 4.6 + j5 Ω; f = 175 MHz.
Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA;
ZL = 4.6 + j5 Ω; f = 175 MHz.
Fig.9
Fig.10 Load power as a function of input power;
typical values per section.
Power gain and efficiency as a function of
load power; typical values per section.
2001 Oct 10
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
+VD
handbook, full pagewidth
R5
R3
C11
+VG
C12
C7
C13
C8
L12
C14
R7
C15
R1
L13
L1
50 Ω
input
C1
L4
L6
L8
L10 L16
L18
L20 C25
L23
L2
C3
C4
C5
C6
C21
C22
C23
C2
L3
L5
L7
L9
L11 L17
L19
L14
C16
R2
C17
C10
R8
L15
C18
C9
C19
C20
+VG
R4
R6
+VD
MGR749
f = 175 MHz.
Fig.11 Test circuit for class-B operation.
2001 Oct 10
L22
7
L21
C24
C26
L24
50 Ω
output
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
List of components class-B test circuit (see Figs 11 and 12)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C2, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF
C3
film dielectric trimmer
4 to 40 pF
C4
multilayer ceramic chip capacitor; note 1 180 pF
C5, C22, C24
film dielectric trimmer
C6
multilayer ceramic chip capacitor; note 2 100 pF
C7, C9, C12,
C14, C17, C19
multilayer ceramic chip capacitor; note 1 100 nF
C8, C10
multilayer ceramic chip capacitor; note 1 680 pF
C11, C20
multilayer ceramic chip capacitor
10 nF
C13, C18
electrolytic capacitor
10 µF, 63 V
C15, C16, C21
multilayer ceramic chip capacitor; note 1 82 pF
C23
multilayer ceramic chip capacitor; note 1 33 pF
2222 809 08002
5 to 60 pF
2222 809 08003
2222 852 47104
2222 852 47103
L1, L3, L22, L24
stripline; note 3
55 Ω
111 × 2.5 mm
L2, L23
semi-rigid cable
50 Ω
length 111 mm
ext. dia 2.2 mm
L4, L5
stripline; note 3
50 Ω
38 × 2.8 mm
L6, L7
stripline; note 3
50 Ω
9 × 2.8 mm
L8, L9
stripline; note 3
50 Ω
8 × 2.8 mm
L10, L11
stripline; note 3
50 Ω
11 × 2.8 mm
L12, L15
grade 3B Ferroxcube wideband
HF choke
L13, L14
4 turns enamelled 1 mm copper wire
50 nH
length 6.5 mm
int. dia. 4 mm
leads 2 × 5 mm
L16, L17
stripline; note 3
50 Ω
16 × 2.8 mm
L18, L19
stripline; note 3
50 Ω
25 × 2.8 mm
L20, L21
stripline; note 3
50 Ω
3 × 2.8 mm
R1, R2
metal film resistor
0.4 W, 10 Ω
R3, R4
10 turns potentiometer
50 kΩ
R5, R6
metal film resistor
0.4 W, 205 kΩ
R7, R8
metal film resistor
1 W, 21.5 Ω
4312 020 36642
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with epoxy glass dielectric (εr = 4.5); thickness
1⁄ inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side
16
of the board are connected together by means of copper straps and hollow rivets.
2001 Oct 10
8
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
200
handbook, full pagewidth
rivet
rivet
strap
strap
strap
strap
rivet
rivet
110
strap
strap
strap
strap
rivet
rivet
+VG
+VD
L22
L12 C11
C13
C14
C12
R7
L1 + L2
C15
C7
C8
R1
C1
C3
C2
L8
L9
L13
C21
L16
L17
C22
L14
L6
L7
L4
C4
L5
C5
R2
C10
C9
C6
L10
L11
L20
C23
C25
C26
L18
L19
C24
L21
C16
R3
C17
L15 C19
C20
C18
L23 + L24
L3
+VG
+VD
MGR750
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as a ground plane.
Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 175 MHz class-B test circuit.
2001 Oct 10
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
MGR746
MGR747
10
15
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
ri
5
RL
10
XL
0
5
xi
−5
0
0
100
200
300
400
0
100
200
300
f (MHz)
400
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA;
RGS = 10 Ω; PL = 60 W (total device).
Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA;
RGS = 10 Ω; PL = 60 W (total device).
Fig.13 Input impedance as a function of frequency
(series components); typical values per
section.
Fig.14 Load impedance as a function of frequency
(series components); typical values per
section.
MGR748
25
handbook, halfpage
Gp
(dB)
20
handbook, halfpage
15
Zi
ZL
10
MBA379
5
0
0
100
200
300
400
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 2 × 50 mA;
RGS = 10 Ω; PL = 60 W (total device).
Fig.16 Power gain as a function of frequency;
typical values per section.
Fig.15 Definition of MOS impedance.
2001 Oct 10
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 8 leads
SOT161A
D
A
F
D1
U1
B
q
C
H1
w2 M C M
c
b
2
H
4
6
8
E1
U2
1
A
3
5
7
E
w1 M A M B M
p
Q
w3 M
b1
e1
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
mm
7.27
6.47
2.93
2.66
2.04
1.77
inches
c
D
D1
E
E1
e
0.18 10.22 10.21 10.21 10.21
3.80
0.10 10.00 9.94 10.00 9.94
F
e1
3.50
H
H1
p
Q
q
U1
U2
w1
2.70 16.81 12.83 3.33 4.32
24.97 10.34
18.42
0.25
2.08 16.21 12.57 3.07 4.06
24.71 10.08
w2
w3
0.51
0.25
0.286 0.115 0.080 0.007 0.402 0.402 0.402 0.402
0.106 0.662 0.505 0.131 0.170
0.983 0.407
0.150 0.138
0.725
0.010 0.020 0.010
0.255 0.105 0.070 0.004 0.394 0.391 0.394 0.391
0.082 0.638 0.495 0.121 0.160
0.973 0.397
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-03-29
99-10-04
SOT161A
2001 Oct 10
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 10
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
NOTES
2001 Oct 10
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
NOTES
2001 Oct 10
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF246B
NOTES
2001 Oct 10
15
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/06/pp16
Date of release: 2001
Oct 10
Document order number:
9397 750 08678