2SC1173 - Jmnic.com

JMnic
Product Specification
2SC1173
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SA473
・Collector current :IC=3A
・Collector dissipation:[email protected]=25℃
APPLICATIONS
・Low frequency power amplifier
・Power regulator
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
30
V
VCEO
Collector-emitter voltage
Open base
30
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
3
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC1173
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
30
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA ;IE=0
30
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=2A IB=0.2A
0.8
V
VBE
Base-emitter on voltage
IC=0.5A ; VCE=2V
1.0
V
ICBO
Collector cut-off current
VCB=20V;IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
70
hFE-2
DC current gain
IC=2.5A ; VCE=2V
25
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
35
pF
fT
Transition frequency
IC=0.5A ; VCE=2V
100
MHz
VCEsat
‹
CONDITIONS
hFE-1 classifications
O
Y
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
JMnic
Product Specification
2SC1173
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3