2SA715 - Jmnic.com

JMnic
Product Specification
2SA715
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SC1162
APPLICATIONS
・Low frequency power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-35
V
VCEO
Collector-emitter voltage
Open base
-35
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-2.5
A
ICM
Collector current-Peak
-3
A
PC
Collector power dissipation
Ta=25℃
0.75
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA715
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; RBE=∞
-35
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-35
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-2.0A ;IB=-0.2A(Pulse test)
-0.5
-1.0
V
VBE
Base-emitter voltage
IC=-1.5A;VCE=-2V(Pulse test)
-1.0
-1.5
V
ICBO
Collector cut-off current
VCB=-35V; IE=0
-20
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
60
hFE-2
DC current gain
IC=-1.5A ; VCE=-2V(Pulse test)
20
Transition frequency
IC=-0.2A ; VCE=-2V(Pulse test)
VCEsat
fT
‹
CONDITIONS
hFE-1 Classifications
B
C
D
60-120
100-200
160-320
2
MIN
TYP.
MAX
UNIT
320
160
MHz
JMnic
Product Specification
2SA715
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SA715
Silicon PNP Power Transistors
4