Hardware Documentation D at a S h e e t ® HAL 1002 Highly Precise Programmable Hall-Effect Switch Edition April 25, 2014 DSH000163_001E HAL 1002 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks – HAL Micronas Patents EP0 953 848, EP 0 647 970, EP 1 039 357, EP 1 575 013, EP 1 949 034 Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, military, aviation, or aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 April 25, 2014; DSH000163_001EN Micronas HAL 1002 Contents Page Section Title 4 4 4 1. 1.1. 1.2. Introduction Major Applications Features 5 5 5 5 2. 2.1. 2.2. 2.3. Ordering Information Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes 6 6 8 10 12 13 3. 3.1. 3.2. 3.3. 3.4. 3.5. Functional Description General Function Digital Signal Processing and EEPROM MODE register General Calibration Procedure Example: Calibration of a Position Switch 14 14 16 16 16 16 17 18 18 19 19 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.6.1. 4.7. 4.8. 4.9. Specifications Outline Dimensions Soldering, Welding and Assembly Pin Connections and Short Descriptions Dimension of Sensitive Area Physical Dimensions Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics 20 20 20 21 21 5. 5.1. 5.2. 5.3. 5.4. Application Notes Application Circuit Temperature Compensation Ambient Temperature EMC and ESD 22 22 22 24 25 25 28 6. 6.1. 6.2. 6.3. 6.4. 6.5. 6.6. Programming Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information 29 7. Data Sheet History 3 April 25, 2014; 000163_001EN Micronas HAL 1002 DATA SHEET Highly Precise Programmable Hall-Effect Switch 1.1. Major Applications Release Note: Revision bars indicate significant changes to the previous edition. Due to the sensor’s versatile programming characteristics, the HAL1002 is the optimal system solution for applications which require very precise contactless switching: 1. Introduction – Endpoint detection The HAL1002 is the improved successor of the HAL 1000 Hall switch. The major sensor characteristics, the two switching points BON and BOFF, are programmable for the application. The sensor can be programmed to be unipolar or latching, sensitive to the magnetic north pole or sensitive to the south pole, with normal or with an electrically inverted output signal. Several examples are shown in Fig. 3–4 through Fig. 3–7. – Level switch (e.g. liquid level) The HAL1002 is based on the HAL83x family and features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a push-pull output stage, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. Internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress effects do not degrade the sensor accuracy. – EMC and ESD optimized design ESD HBM performance >7 kV The HAL1002 is programmable by modulating the supply voltage. No additional programming pin is needed. Programming is simplified through the use of a 2-point calibration. Calibration is accomplished by adjusting the sensor output directly to the input signal. Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated for the final assembly. This offers a low-cost alternative for all applications that presently require mechanical adjustment or other system calibration. In addition, the temperature compensation of the Hall IC can be tailored to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with constant switching points. – Electronic fuse (current measurement) 1.2. Features – High-precision Hall switch with programmable switching points and switching behavior – AEC-Q100 qualified – Switching points programmable from 150 mT up to 150 mT in steps of 0.5% of the magnetic field range – Multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function – Temperature characteristics are programmable for matching all common magnetic materials – Programming through a modulation of the supply voltage – Operates from 40 °C up to 150 °C ambient temperature – Operates from 4.5 V up to 8.5 V supply voltage in specification and functions up to 11 V – Operates with static magnetic fields and dynamic magnetic fields up to 2 kHz – Magnetic characteristics are extremely robust against mechanical stress effects – Overvoltage and reverse-voltage protection at all pins – Short-circuit protected push-pull output The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The sensor is designed and produced in sub-micron CMOS technology for the use in hostile industrial and automotive applications with nominal supply voltage of 5 V in the ambient temperature range from 40 °C up to 150 °C. The HAL1002 is available in the leaded package TO92UT-2. 4 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET 2. Ordering Information 2.1. Marking Code The HAL1002 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range A HAL1002 1002A 2.2. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = 40 °C to +170 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 5.3. on page 21. 2.3. Hall Sensor Package Codes HALXXXXPA-T Temperature Range: A Package: UT for TO92UT-1/-2 Type: 1002 Example: HAL1002UT-A Type: 1002 Package: TO92UT Temperature Range: TJ = 40 °C to +170 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. Micronas April 25, 2014; DSH000163_001EN 5 HAL 1002 DATA SHEET 3. Functional Description 3.1. General Function The HAL1002 is a monolithic integrated circuit which provides a digital output signal. The sensor is based on the HAL83x design. The Hall plate is sensitive to magnetic north and south polarity. The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. This voltage is converted to a digital value and processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers. The function and the parameters for the DSP are explained in Section 3.2. on page 8. The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset. As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 3–1). After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The digital output is switched off during the communication. Internal temperature compensation circuitry and the choppered offset compensation enable the operation over the full temperature range with minimal changes of the switching points. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant EEPROM cells. In addition, the HAL1002 is equipped with devices for overvoltage and reverse-voltage protection at all pins. HAL 1002 VSUP VOUT (V) VSUP (V) 8 7 6 5 VSUP OUT GND Fig. 3–1: Programming with VSUP modulation 6 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET VSUP Internally stabilized Supply and Protection Devices Switched Hall Plate Temperature Dependent Bias Oscillator A/D Converter Digital Signal Processing Protection Devices Digital Output 100 OUT EEPROM Memory Supply Level Detection Lock Control GND Fig. 3–2: HAL1002 block diagram ADC-Readout Register 12 bit Digital Signal Processing Digital Output 12 bit Limiter A/D Converter TC TCSQ 5 bit 3 bit Digital Filter Mode Register Range Filter 3 bit 2 bit Multiplier Adder Comparator Sensitivity 14 bit VOQ 11 bit Low Level 8 bit High Level 9 bit Lock Micronas 1 bit Register Other: 5 bit TC Range Select 2 bit EEPROM Memory Lock Control Fig. 3–3: Details of EEPROM Registers and Digital Signal Processing Micronas April 25, 2014; DSH000163_001EN 7 HAL 1002 DATA SHEET 3.2. Digital Signal Processing and EEPROM The DSP is the main part of the sensor and performs the signal processing. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 3–3. Group 3 contains the Micronas registers and LOCK for the locking of all registers. The Micronas registers are programmed and locked during production and are read-only for the customer. These registers are used for oscillator frequency trimming, A/D converter offset compensation, and several other special settings. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter EEPROM Registers: The EEPROM registers include three groups: Group 1 contains the registers for the adaption of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC and TCSQ for the temperature characteristics of the magnetic sensitivity and thereby for the switching points. Group 2 contains the registers for defining the switching points: SENSITIVITY, VOQ, LOW-LEVEL, and HIGH-LEVEL. The comparator compares the processed signal voltage with the reference values Low-Level and HighLevel. The output switches on (low) if the signal voltage is higher than the High-Level, and switches off (high) if the signal falls below the Low-Level. Several examples of different switching characteristics are shown in Fig. 3–4 to Fig. 3–7. – The parameter VOQ (Output Quiescent Voltage) corresponds to the signal voltage at B = 0 mT. – The parameter Sensitivity defines the magnetic sensitivity: Sensitivity = VSignal B – The signal voltage can be calculated as follows: VSignal Sensitivity B + VOQ Therefore, the switching points are programmed by setting the SENSITIVITY, VOQ, LOW-LEVEL, and HIGH-LEVEL registers. The available Micronas software calculates the best parameter set respecting the ranges of each register. 8 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET Digital Output VOQ Digital Output High-Level High-Level Low-Level Low-Level VOQ B B VOUT VSUP VOUT VSUP B Fig. 3–4: HAL1002 with unipolar behavior B Fig. 3–6: HAL1002 with unipolar inverted behavior Digital Output Digital Output High-Level High-Level VOQ Low-Level Low-Level VOQ B B VOUT VOUT VSUP VSUP B Fig. 3–5: HAL1002 with latching behavior Micronas B Fig. 3–7: HAL1002 with unipolar behavior sensitive to the other magnetic polarity April 25, 2014; DSH000163_001EN 9 HAL 1002 DATA SHEET 3.3. MODE register The MODE register contains all bits used to configure the A/D converter and the different output modes. MODE Bit Number 9 8 7 6 5 Parameter RANGE Signed Offset Correction OUTPUTMODE 4 3 FILTER 2 1 RANGE (together with bit 9) 0 Offset Correction Table 3–1: MODE register of the HAL 1002 Offset Correction Magnetic Range The Offset Correction function can be used for handling unipolar magnetic fields or systems with high magnetic offset and small magnetic amplitudes. The OFFSET CORRECTION register allows to adjust the digital offset after the built-in A/D-converter. The digital offset can be programmed to 50%, 0% and 50% of A/D-converter full-scale range. Offset Correction OFFSET CORRECTION MODE [8] MODE [0] 50% 0 1 0 0 0 50% 1 1 MODE [9] MODE [2:1] 40 mT 1 10 60 mT 0 01 80 mT 0 10 100 mT 0 11 150 mT 1 11 Table 3–2: Magnetic Range Filter The FILTER bits define the 3 dB frequency of the digital low pass filter. For Offset correction please contact Micronas service. Magnetic Range The RANGE bits define the magnetic field range of the A/D converter. Magnetic Range RANGE 3 dB Frequency MODE [4:3] 80 Hz 00 500 Hz 10 1 kHz 11 2 kHz 01 RANGE MODE [9] MODE [2:1] 15 mT 1 00 30 mT 0 00 Table 3–2: Magnetic Range 10 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET Output Format VOQ Register The OUTPUTMODE bits define the different output modes of HAL1002. The VOQ register contains the parameter for the adder in the DSP. VOQ is the signal voltage without external magnetic field (B = 0 mT, respectively ADC-READOUT = 0) and programmable from VSUP up to VSUP. For VSUP = 5 V, the register can be changed in steps of 4.9 mV. Output Format MODE [7:5] Switch (positive polarity) 100 Switch (negative polarity) 101 Note: If VOQ is programmed to a negative voltage, the maximum signal voltage is limited to: Table 3–3: OUTPUTMODE VSignal max = VOQ + VSUP TC Register The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaptation is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be constant over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about 3100 ppm/K up to 1000 ppm/K and quadratic coefficients from about -7 ppm/K² to 2 ppm/K². The full TC range is separated in the following four groups: Reference Level Register The LOW-LEVEL and HIGH-LEVEL registers contain the reference values of the comparator. The Low-Level is programmable between 0 V and VSUP/2. The register can be changed in steps of 2.44 mV. The High-Level is programmable between 0 V and VSUP in steps of 2.44 mV. The four parameters Sensitivity, VOQ, Low-Level, and High-Level define the switching points BON and BOFF. For calibration in the system environment, a 2-point adjustment procedure is recommended (see Section 3.4.). The suitable parameter set for each sensor can be calculated individually by this procedure. GP Register TC-Range [ppm/k] GROUP 3100 to 1800 0 1750 to 550 2 500 to +450 (default value) 1 +450 to +1000 3 This register can be used to store information, like production date or customer serial number. Micronas will store production lot number, wafer number and x,y coordinates in registers GP1 to GP3. The total register contains four blocks with a length of 13 bit each.The customer can read out this information and store it in his production data base for reference or he can store own production information instead. TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example 0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ = 1. Please refer to Section 5.2. on page 20 for more details. Sensitivity Register The SENSITIVITY register contains the parameter for the multiplier in the DSP. Sensitivity is programmable between 4 and 4 in steps of 0.00049. Sensitivity = 1 corresponds to an increase of the signal voltage by VSUP if the ADC-READOUT increases by 2048. Micronas Note: This register is not a guarantee for traceability because readout of registers is not possible after locking the IC. To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In case of a writing the registers it necessary to first write all registers followed by one store sequence at the end. Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written again to these registers. April 25, 2014; DSH000163_001EN 11 HAL 1002 DATA SHEET LOCK Register By setting the LSB of this 2-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. After locking of sensor is active, it will no longer respond to power supply modulation. For the individual calibration of each sensor in the customer‘s application, a two-point adjustment is recommended (see Fig. 3–1 for an example). When using the application kit, the calibration can be done in three steps: Step 1: Input of the registers which need not be adjusted individually Warning: This register cannot be reset! The magnetic circuit, the magnetic material with its temperature characteristics, and the filter frequency, are given for this application. ADC-READOUT Register Therefore, the values of the following registers should be identical for all sensors in the application. This 14-bit register delivers the actual digital value of the applied magnetic field after filtering but before the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. – FILTER (according to maximum signal frequency) The 500 Hz range is recommended for highest accuracy. D/A-READOUT – RANGE (according to the maximum magnetic field at the sensor position) This 14-bit register delivers the actual digital value of the applied magnetic field after the signal processing. – TC and TCSQ (depends on the material of the magnet and the other temperature dependencies of the application) This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. Write the appropriate settings into the HAL1002 registers. Step 2: Calculation of the Sensor Parameters Note: The MSB and LSB are reversed compared with all the other registers. Please reverse this register after readout. Note: During calibration it is mandatory to select the Analog Output as output format.The D/A-Readout register can be read out only in the output mode. For all other modes the result read back from the sensor will be a 0. After the calibration the output format can than easily be switched to the wanted output mode. Set the system to the calibration point where the sensor output must be high, and press the key “Readout BOFF”. The result is the corresponding ADC-READOUT value. Note: The magnetic south pole on the branded side generates negative ADC-READOUT values, the north polarity positive values. 3.4. General Calibration Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input or calculation of the register values. In this section, the programming of the sensor using this tool is explained. Please refer to Section 5. on page 24 for information about programming without this tool. 12 Fig. 3–1 shows the typical characteristics for a contactless switch. There is a mechanical range where the sensor must be switched high and where the sensor must be switched low. Then, set the system to the calibration point where the sensor output must be low, press the key “Readout BON” and get the second ADC-READOUT value. Now, adjust the hysteresis to the desired value. The hysteresis is the difference between the switching points and suppresses oscillation of the output signal. With 100% hysteresis, the sensor will switch low and high exactly at the calibration points. A lower value will adjust the switching points closer together. Fig. 3–1 shows an example with 80% hysteresis. April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET By pressing the key “calibrate and store”, the software will calculate the corresponding parameters for Sensitivity, VOQ, Low-Level, High-Level and stores these values in the EEPROM. This calibration must be done individually for each sensor. Step 1: Input of the registers which need not be adjusted individually The register values for the following registers are given for all sensors in the application: – FILTER Select the filter frequency: 500 Hz The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. – RANGE Select the magnetic field range: 30 mT VOUT – TCSQ For this magnetic material: 14 Sensor switched off Hysteresis (here 80 %) Sensor switched on position – TC For this magnetic material: 6 Enter these values in the software and use the “write and store” command to store these values permanently in the registers. Step 2: Calculation of the Sensor Parameters Calibration points Fig. 3–1: Characteristics of a position switch Set the system to the calibration point where the sensor output must be high and press “Readout BOFF”. Step 3: Locking the Sensor Set the system to the calibration point where the sensor output must be low and press “Readout BON”. The last step is activating the LOCK function with the “lock” key. The sensor is now locked and does not respond to any programming or reading commands. Now, adjust the hysteresis to 80% and press the key “calibrate and store”. Warning: The LOCK register cannot be reset! 3.5. Example: Calibration of a Position Switch The following description explains the calibration procedure using a position switch as an example: – The mechanical switching points are given. – temperature coefficient of the magnet: 500 ppm/K Micronas Step 3: Locking the Sensor The last step is activating the LOCK function with the “LOCK” command. The sensor is now locked and does not respond to any programming or reading commands. Please note that the LOCK function becomes effective after power-down and power-up of the Hall-IC. Warning: The LOCK register cannot be reset! April 25, 2014; DSH000163_001EN 13 HAL 1002 DATA SHEET 4. Specifications 4.1. Outline Dimensions A2 E1 Bd A3 A4 F1 D1 y Center of sensitive area 1 2 3 L F2 e b Θ c physical dimensions do not include moldflash. 0 solderability is guaranteed between end of pin and distance F1. 2.5 5 mm scale Sn-thickness might be reduced by mechanical handling. A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet. min/max of D1 are specified in the datasheet. UNIT A2 A3 b c D1 e E1 F1 F2 L Θ mm 1.55 1.45 0.7 0.42 0.36 4.05 1.27 4.11 4.01 1.2 0.8 0.60 0.42 14.5 min 45° JEDEC STANDARD ANSI ISSUE ITEM NO. - - ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. 10-04-29 06615.0001.4 ZG001015_Ver.07 Fig. 4–1: TO92UT-2 Plastic Transistor Standard UT package, 3 leads Weight approximately 0.12 g 14 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET Fig. 4–2: TO92UA/UT: Dimensions ammopack inline, not spread Micronas April 25, 2014; DSH000163_001EN 15 HAL 1002 DATA SHEET 4.2. Soldering, Welding and Assembly Please check the Micronas Document “Guidelines for the Assembly of HAL Packages” for further information about solderability, welding, assembly, and second-level packaging. The document is available on the Micronas website or on the service portal. 4.3. Pin Connections and Short Descriptions Pin No. Pin Name Short Description 1 VSUP Supply Voltage and Programming Pin 2 GND Ground 3 OUT Push-Pull Output and Selection Pin 1 VSUP OUT 3 2 GND Fig. 4–3: Pin configuration 4.4. Dimension of Sensitive Area 0.25 mm x 0.25 mm 4.5. Physical Dimensions TO92UT-1/-2 A4 0.3 mm nominal Bd 0.3 mm D1 4.05 mm ± 0.05 mm H1 min. 22.0 mm max. 24.1 mm y 1.5 mm nominal 16 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET 4.6. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit Condition VSUP Supply Voltage 1 8.5 11 V t < 96 h3) VSUP Supply Voltage 1 16 16 V t < 1 h3) VOUT Output Voltage 3 5 16 V VOUT VSUP Excess of Output Voltage over Supply Voltage 3,1 2 V IOUT Continuous Output Current 3 10 10 mA tSh Output Short Circuit Duration 3 10 min VESD ESD Protection1) 1 3 8.0 7.5 8.0 7.5 kV TJ Junction Temperature under bias2) 50 190 °C 1) AEC-Q100-002 (100 pF and 1.5 k) 2) For 96 h - Please contact Micronas for 3) other temperature requirements No cumulated stress Micronas April 25, 2014; DSH000163_001EN 17 HAL 1002 DATA SHEET 4.6.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for two years from the date code on the package. 4.7. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VSUP Supply Voltage 1 4.5 5 8.5 V IOUT Continuous Output Current 3 1.2 1.2 mA RL Load Resistor 3 5.0 10 k CL Load Capacitance 3 0.33 100 1000 nF NPRG Number of EEPROM Programming Cycles 100 cycles 0°C < Tamb < 55°C TJ Junction Temperature Range1) 40 40 40 125 150 170 °C °C °C for 8000 h2) for 2000 h2) for 1000 h2) 1) 2) 18 Condition Can be pull-up or pulldown resistor (analog output only) Depends on the temperature profile of the application. Please contact Micronas for life time calculations. Time values are not cumulative April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET 4.8. Characteristics at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 8.5 V, after programming and locking of the device, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VSUP = 5 V. Symbol Parameter Pin No. IDD Supply Current over Temperature Range 1 VOUTH Output High Voltage 3 VOUTL Output Low Voltage 3 fADC Internal ADC Frequency fADC Internal ADC Frequency over Temperature Range tr(O) Min. 4.65 Typ. Max. Unit 7 10 mA 4.8 Conditions V VSUP = 5 V, 1 mA IOUT 1 mA 0.2 0.35 V VSUP = 5 V, 1 mA IOUT 1 mA 120 128 140 kHz TJ = 25 °C 110 128 150 kHz VSUP = 5 V Response Time of Output 3 5 4 2 1 10 8 4 2 ms ms ms ms 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, time from 10% to 90% of final output voltage for a steplike signal Bstep from 0 mT to Bmax td(O) Delay Time of Output 3 0.1 0.5 ms CL = 10 nF tPOD Power-Up Time (Time to reach stabilized Output Voltage) 6 5 3 2 11 9 5 3 ms ms ms ms 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz CL = 10 nF, 90% of VOUT BW Small Signal Bandwidth (3 dB) 3 2 kHz BAC < 10 mT; 3 dB Filter frequency = 2 kHz 235 61 159 K/W measured on a 1s0p board measured on a 1s0p board measured on a 1s1p board bit including sign bit Thermal Resistance Rthja Rthjc Rthjs Junction to Ambient Junction to Case Junction to Solder Point BON_OFF_res Programming Resolution BON_OFF_acc Threshold Accuracy 0.1 +0.1 % at TJ = 25 °C based on characterization BON_OFF_acc Threshold Accuracy 4 +4 % over operating temperature range based on characterization 12 4.9. Magnetic Characteristics at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 8.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VSUP = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions BOffset Magnetic Offset 3 0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 °C, unadjusted sensor BOffset Magnetic Offset Drift 200 0 200 T B = 0 mT, IOUT = 0 mA VSUP = 5 V; 60 mT range, 3db frequency = 500 Hz, TC = 15, TCSQ = 1, TC-Range = 1 0.65 < sensitivity < 0.65 Micronas April 25, 2014; DSH000163_001EN 19 HAL 1002 DATA SHEET 5. Application Notes 5.2. Temperature Compensation 5.1. Application Circuit The relationship between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. For EMC protection, it is recommended to connect one ceramic 100 nF capacitor between ground and the supply voltage, and between ground and the output pin. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VSUP line at this time must be able to resist this voltage. The HAL83x and HAL1002 contain the same temperature compensation circuits. If an optimal setting for the HAL83x is already available, the same settings may be used for the HAL1002. VSUP OUT HAL1002 100 nF GND Fig. 5–1: Recommended application circuit For application circuits for high supply voltages, such as 24 V, please contact the Micronas application service. Temperature Coefficient of Magnet (ppm/K) TC-Range TC TCSQ 1075 3 31 7 1000 3 28 1 900 3 24 0 750 3 16 2 675 3 12 2 575 3 8 2 450 3 4 2 400 1 31 0 250 1 24 1 150 1 20 1 50 1 16 2 0 1 15 1 100 1 12 0 200 1 8 1 300 1 4 4 400 1 0 7 500 1 0 0 600 2 31 2 700 2 28 1 800 2 24 3 900 2 20 6 1000 2 16 7 VSUP R1 OUT HAL1002 Z1 100 nF GND Fig. 5–2: Example for an application circuit for high supply voltage 20 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET Temperature Coefficient of Magnet (ppm/K) TC-Range TC TCSQ 1100 2 16 2 1200 2 12 5 1300 2 12 0 1400 2 8 3 1500 2 4 7 1600 2 4 1 1700 2 0 6 1800 0 31 6 1900 0 28 7 2000 0 28 2 2100 0 24 6 2200 0 24 1 2400 0 20 0 2500 0 16 5 2600 0 14 5 2800 0 12 1 2900 0 8 6 3000 0 8 3 3100 0 4 7 3300 0 4 1 3500 0 0 4 5.3. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + T At static conditions and continuous operation, the following equation applies: T = I SUP V SUP R thJ For typical values, use the typical parameters. For worst case calculation, use the max. parameters for ISUP and Rth, and the max. value for VSUP from the application. For VSUP = 5.5 V, Rth = 235 K/W, and ISUP = 10 mA, the temperature difference T = 12.93 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax – T 5.4. EMC and ESD Please contact Micronas for the detailed investigation reports with the EMC and ESD results. Note: The above table shows only some approximate values. Micronas recommends to use the TCCalc software to find optimal settings for temperature coefficients. Please contact Micronas for more detailed information. Micronas April 25, 2014; DSH000163_001EN 21 HAL 1002 DATA SHEET 6. Programming tr tf VSUPH 6.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VSUP-line and the output. The bit time for the VSUP-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. tp0 logical 0 tp0 or VSUPL tp1 VSUPH tp0 logical 1 VSUPL or tp0 tp1 Fig. 6–1: Definition of logical 0 and 1 bit 6.2. Definition of the Telegram Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 4 kinds of telegrams: – Write a register (see Fig. 6–2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. – Read a register (see Fig. 6–3) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. – Programming the EEPROM cells (see Fig. 6–4) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. – Activate a sensor (see Fig. 6–5) If more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. The output of all sensors have to be pulled to ground. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands will only be accepted from the activated sensor. 22 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET Table 6–1: Telegram parameters Symbol Parameter Pin Min. Typ. Max. Unit Remarks VSUPL Supply Voltage for Low Level during Programming 1 5 5.6 6 V VSUPH Supply Voltage for High Level during Programming 1 6.8 8.0 8.5 V tr Rise time 1 0.05 ms tf Fall time 1 0.05 ms tp0 Bit time on VSUP 1 1.7 1.75 1.9 ms tp0 is defined through the Sync Bit tpOUT Bit time on output pin 3 2 3 4 ms tpOUT is defined through the Acknowledge Bit tp1 Duty-Cycle Change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT VSUPPROG Supply Voltage for Programming the EEPROM 1 12.4 12.5 12.6 V tPROG Programming Time for EEPROM 1 95 100 105 ms trp Rise time of programming voltage 1 0.2 0.5 1 ms tfp Fall time of programming voltage 1 0 1 ms tw Delay time of programming voltage after Acknowledge 1 0.5 0.7 1 ms Vact Voltage for an Activate pulse 3 3 4 5 V tact Duration of an Activate pulse 3 0.05 0.1 0.2 ms Vout,deact Output voltage after deactivate command 3 0 0.1 0.2 V WRITE Sync COM CP ADR AP DAT DP VSUP Acknowledge VOUT Fig. 6–2: Telegram for coding a Write command READ Sync COM CP ADR AP VSUP Acknowledge DAT DP VOUT Fig. 6–3: Telegram for coding a Read command Micronas April 25, 2014; DSH000163_001EN 23 HAL 1002 DATA SHEET trp tPROG tfp VSUPPROG ERASE, PROM, and LOCK Sync COM CP ADR AP VSUP Acknowledge VOUT tw Fig. 6–4: Telegram for coding the EEPROM programming VACT tr tACT tf VOUT Fig. 6–5: Activate pulse Address Parity Bit (AP) 6.3. Telegram Codes This parity bit is “1” if the number of zeros within the 4 Address bits is uneven. The parity bit is “0” if the number of zeros is even. Sync Bit Data Bits (DAT) Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for tp0. The 14 Data Bits contain the register information. Command Bits (COM) The registers use different number formats for the Data Bits. These formats are explained in Section 6.4. The Command code contains 3 bits and is a binary number. Table 6–2 shows the available commands and the corresponding codes for the HAL 1002. In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is written, only the last 10 bits are valid. Command Parity Bit (CP) In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is read, only the first 10 bits are valid. This parity bit is “1” if the number of zeros within the 3 Command Bits is uneven. The parity bit is “0”, if the number of zeros is even. Data Parity Bit (DP) This parity bit is “1” if the number of zeros within the binary number is even. The parity bit is “0” if the number of zeros is uneven. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 6–3 shows the available addresses for the HAL 1002 registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical “0” pulse defines the exact timing for tpOUT. 24 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET Table 6–2: Available commands Command Code Explanation READ 2 read a register WRITE 3 write a register PROM 4 program all nonvolatile registers (except the lock bits) ERASE 5 erase all nonvolatile registers (except the lock bits) 6.4. Number Formats 6.5. Register Information Binary number: LOW Level The most significant bit is given as first, the least significant bit as last digit. – The register range is from 0 up to 255. – The register value is calculated by: Example: 101001 represents 41 decimal. Low-Level Voltage 2 LOW Level = -------------------------------------------------------- 255 V SUP Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: 0101001 represents +41 decimal 1101001 represents 41 decimal HIGH Level – The register range is from 0 up to 511. – The register value is calculated by: Two’s-complement number: The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add “1”. Example: 0101001 represents +41 decimal 1010111 represents 41 decimal High-Level Voltage HIGH Level = ------------------------------------------------ 511 V SUP VOQ – The register range is from 1024 up to 1023. – The register value is calculated by: V OQ VOQ = ------------- 1024 V SUP Micronas April 25, 2014; DSH000163_001EN 25 HAL 1002 DATA SHEET SENSITIVITY – The register range is from 8192 up to 8191. – The register value is calculated by: MODE = RANGE 512 + SIGNOC 256 + OUTPUTMODE 32 + FILTER 8 + RANGE 2 + OFFSETCORRECTION SIGNOC = Sign Offset Correction SENSITIVITY = Sensitivity 2048 D/A-READOUT TC – This register is read only. – The TC register range is from 0 up to 1023. – The register range is from 0 up to 16383. – The register value is calculated by: DEACTIVATE TC = GROUP 256 + TCValue 8 + TCSQValue – This register can only be written. – The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. MODE – The register range is from 0 up to 1023 and contains the settings for FILTER, RANGE, OUTPUTMODE and OFFSET CORRECTION: – The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. Table 6–3: Available register addresses Register Code Data Bits Format Customer Remark LOW LEVEL 1 8 binary read/write/program Low voltage HIGH LEVEL 2 9 binary read/write/program High voltage VOQ 3 11 two’s compl. binary read/write/program Output quiescent voltage SENSITIVITY 4 14 signed binary read/write/program MODE 5 10 binary read/write/program Range, filter, output mode, Offset Correction settings LOCKR 6 2 binary read/write/program Lock Bit GP REGISTERS 1..3 8 3x13 binary read/write/program 1) D/A-READOUT 9 14 binary read Bit sequence is reversed during read TC 11 10 binary read/write/program bits 0 to 2 TCSQ bits 3 to 7 TC bits 7 to 9 TC Range GP REGISTER 0 12 13 binary read/write/program 1) DEACTIVATE 15 12 binary write Deactivate the sensor 1) To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In case of a writing the registers it is necessary to first write all registers followed by one store sequence at the end. Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written again to these registers. 26 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET Table 6–4: Data formats Char DAT3 DAT2 DAT1 DAT0 Register Bit 15 14 13 12 11 10 09 08 07 06 05 04 03 02 01 00 LOW LEVEL Write Read V V V V V V V V V V V V V V V V HIGH LEVEL Write Read V V V V V V V V V V V V V V V V V V VOQ Write Read V V V V V V V V V V V V V V V V V V V V V V SENSITIVITY Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V V V MODE Write Read V V V V V V V V V V V V V V V V V V V V LOCKR Write Read V V V V GP 1..3 Registers Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V D/AREADOUT1) Read V V V V V V V V V V V V V V TC Write Read V V V V V V V V V V V V V V V V V V V V GP 0 Register Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V DEACTIVATE Write 1 0 0 0 0 0 0 0 1 1 1 1 V: valid, : ignore, bit order: MSB first 1) LSB first Micronas April 25, 2014; DSH000163_001EN 27 HAL 1002 DATA SHEET 6.6. Programming Information If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands must be zero. ERASE and PROM act on all registers in parallel. If all HAL 1002 registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. Note: For production and qualification tests it is mandatory to set the LOCK bit after final adjustment and programming of HAL 1002. The LOCK function is active after the next power-up of the sensor. The success of the lock process shall be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. 28 April 25, 2014; DSH000163_001EN Micronas HAL 1002 DATA SHEET 7. Data Sheet History 1. Preliminary Data Sheet “HAL 1002 Highly Precise Programmable Hall-Effect Switch”, Dec. 13, 2013, PD000214_001EN. First release of the preliminary data sheet. 2. Data Sheet “HAL 1002 Highly Precise Programmable Hall-Effect Switch”, April 25, 2014, DSH000163_001EN. First release of the data sheet. Major Changes: – Block diagram updated – Parameter values for Programming Resolution and Threshold Accuracy added Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com 29 April 25, 2014; DSH000163_001EN Micronas