HAL 549 Hall-Effect Sensor with Undervoltage Reset

Hardware
Documentation
Data Sheet
®
HAL 549
Hall-Effect Sensor with
Undervoltage Reset
Edition Jan. 30, 2009
DSH000022_003EN
HAL549
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person
or entity of such revision or changes. For further
advice please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL549
DATA SHEET
Contents
Page
Section
Title
4
4
4
4
4
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Features
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability and Welding
Pin Connections
6
2.
Functional Description
7
7
12
12
12
12
13
14
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
19
19
4.
4.1.
Type Description
HAL549
21
21
21
21
21
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-Up Behavior
EMC and ESD
22
6.
Data Sheet History
Micronas
Jan. 30, 2009; DSH000022_003EN
3
HAL549
DATA SHEET
Hall-Effect Sensor with Undervoltage Reset
in CMOS Technology
Release Note: Revision bars indicate significant
changes to the previous edition.
1.2. Marking Code
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
Type
1. Introduction
The HAL549 is a Hall Effect switch produced in CMOS
technology. The sensor includes a temperature-compensated Hall plate with active offset compensation, a
comparator, and an open-drain output transistor. The
comparator compares the actual magnetic flux through
the Hall plate (Hall voltage) with the fixed reference
values (switching points). Accordingly, the output transistor is switched on or off. In addition to the HAL50x/
51x family, the HAL549 features a power-on and undervoltage reset.
The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are
robust against mechanical stress effects.
The sensor is designed for industrial and automotive
applications and operates with supply voltages from
4.3 V to 24 V in the ambient temperature range from
−40 °C up to 140 °C.
The HAL549 sensor is available in the SMD-package
SOT89B-1 and in the leaded versions TO92UA-1 and
TO92UA-2.
HAL549
Temperature Range
K
E
549K
549E
1.3. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
Note: Due to power dissipation, there is a difference
between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on
page 21 for details.
1.4. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K or E
1.1. Features
– switching offset compensation at typically 62 kHz
Package: SF for SOT89B-1
UA for TO92UA
– operates from 4.3 V to 24 V supply voltage
Type: 549
– power-on and undervoltage reset
– overvoltage protection at all pins
Example: HAL549UA-K
– reverse-voltage protection at VDD-pin
→ Type: 549
→ Package: TO92UA
→ Temperature Range: TJ = −40 °C to +140 °C
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
– constant switching points over a wide supply voltage range
– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
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HAL549
DATA SHEET
1.5. Solderability and Welding
All packages: according to IEC68-2-58.
Solderability
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.6. Pin Connections
1 VDD
3
OUT
2 GND
Fig. 1–1: Pin configuration
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HAL549
DATA SHEET
2. Functional Description
HAL549
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the magnetic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
output pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
A built-in reset-circuit clamps the output to the “low”
state (reset state) during power-on or when the supply
voltage drops below a reset voltage of Vreset < 4.3 V.
For supply voltages between Vreset and 4.3 V, the output state of the device responds to the magnetic field.
For supply voltages above 4.3 V, the device works
according to the specified characteristics. The output
state is not defined for VDD < 3 V.
6
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Power-on &
Undervoltage
Reset
Short Circuit &
Overvoltage
Protection
Comparator
Switch
OUT
Output
3
Clock
GND
2
Fig. 2–1: HAL549 block diagram
fosc
t
B
BON
t
VOUT
VOH
VOL
t
IDD
1/fosc = 9 μs
tf
t
Fig. 2–2: Timing diagram
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Micronas
HAL549
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
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HAL549
DATA SHEET
Fig. 3–2:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
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HAL549
DATA SHEET
Fig. 3–3:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
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HAL549
DATA SHEET
Fig. 3–4:
TO92UA/UT-2: Dimensions ammopack inline, not spread
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HAL549
DATA SHEET
Fig. 3–5:
TO92UA/UT: Dimensions ammopack inline, spread
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Jan. 30, 2009; DSH000022_003EN
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HAL549
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT89B-1
TO92UA-1/-2
x
center of
the package
center of
the package
y
0.95 mm nominal
1.0 mm nominal
A4
0.3 mm nominal
–
Bd
0.2 mm
–
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−15
281)
V
VO
Output Voltage
3
−0.3
281)
V
IO
Continuous Output On Current
3
−
501)
mA
TJ
Junction Temperature Range
−40
−40
150
1702)
°C
1)
2)
as long as TJmax is not exceeded
t < 1000h
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
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HAL549
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4.3
24
V
IO
Continuous Output On Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
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HAL549
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
2.3
3
4.2
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
−
28
32
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage over
Temperature Range
3
−
130
4001)
mV
IOL = 20 mA
IOH
Output Leakage Current over
Temperature Range
3
−
−
10
μA
Output switched off,
TJ ≤140 °C, VOH = 4.3 to 24 V
fosc
Internal Oscillator Chopper
Frequency over Temperature
Range
−
−
62
−
kHz
Vreset
Reset Voltage
1
−
3.8
−
V
ten(O)
Enable Time of Output after
Setting of VDD
1
−
70
−
μs
VDD = 12 V2)
tr
Output Rise Time
3
−
75
400
ns
tf
Output Fall Time
3
−
50
400
ns
VDD = 12 V,
RL = 820 Ω,
CL = 20 pF
SOT89B Package
Thermal Resistance
Rthja
Junction to Ambient
−
−
−
2093)
K/W
Rthjc
Junction to Case
−
−
−
563)
K/W
Rthjs
Junction to Solder Point
−
−
−
824)
K/W
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
TO92UA Package
Thermal Resistance
Rthja
Junction to Ambient
−
−
−
2463)
K/W
Rthjc
Junction to Case
−
−
−
703)
K/W
Rthjs
Junction to Solder Point
−
−
−
1274)
K/W
1) For supply voltage below 4.3 V, the output
2) B > B
ON + 2 mT or B < BOFF − 2 mT
3) Measured with a 1s0p board
4) Measured with a 1s1p board
14
low voltage will increase and will be higher than 400 mV
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HAL549
DATA SHEET
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
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HAL549
DATA SHEET
mA
25
mA
5
HAL 549
HAL 549
20
IDD
IDD
TA = –40 °C
15
4
TA = 25 °C
VDD = 24 V
VDD = 12 V
TA=140 °C
10
3
5
2
0
VDD = 3.8 V
–5
1
–10
–15
–15–10 –5 0
0
–50
5 10 15 20 25 30 35 V
0
50
100
VDD
200 °C
TA
Fig. 3–7: Typical supply current
versus supply voltage
mA
5.0
150
Fig. 3–9: Typical supply current
versus ambient temperature
kHz
100
HAL 549
4.5
HAL 549
90
IDD 4.0
fosc
TA = –40 °C
3.5
80
VDD = 3.8 V
70
TA = 25 °C
3.0
60
TA = 100 °C
2.5
50
VDD = 4.5 V...24 V
TA = 140 °C
2.0
40
1.5
30
1.0
20
0.5
10
0
1
2
3
4
5
6
7
0
–50
8 V
VDD
Fig. 3–8: Typical supply current
versus supply voltage
16
0
50
100
150
200 °C
TA
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
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Micronas
HAL549
DATA SHEET
kHz
100
mV
350
HAL 549
HAL 549
IO = 20 mA
90
300
fosc 80
VOL
250
70
TA = 25 °C
60
TA = –40 °C
50
200
TA = 100 °C
150
TA = 25 °C
TA = 140 °C
40
30
TA = –40 °C
100
20
50
10
0
0
5
10
15
20
25
0
30 V
0
5
10
15
20
VDD
30 V
VDD
Fig. 3–11: Typ. internal chopper frequency
versus supply voltage
kHz
100
25
Fig. 3–13: Typical output low voltage
versus supply voltage
mV
400
HAL 549
HAL 549
IO = 20 mA
90
fosc
VDD = 3.8 V
VOL
80
300
VDD = 4.5 V
70
TA = 25 °C
60
TA = –40 °C
50
TA = 140 °C
VDD = 24 V
200
40
30
100
20
10
0
3
3.5
4.0
4.5
5.0
5.5
0
–50
6.0 V
VDD
50
100
150
200 °C
TA
Fig. 3–12: Typ. internal chopper frequency
versus supply voltage
Micronas
0
Fig. 3–14: Typical output low voltage
versus ambient temperature
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HAL549
DATA SHEET
μA
104
dBμA
30
HAL 549
HAL 549
VDD = 12 V
TA = 25 °C
Quasi-PeakMeasurement
103
IOH 102
101
IDD
TA = 150 °C
20
max. spurious
signals
10
100
10–1
TA = 100 °C
0
10–2
10–3
10–4
TA = 25 °C
–10
TA = –40 °C
–20
10–5
10–6
15
20
25
30
–30
0.01
35 V
0.10
1.00
1
f
VOH
Fig. 3–15: Typ. output high current
versus output voltage
μA
Fig. 3–17: Typ. spectrum of supply current
dBμV
80
HAL 549
102
HAL 549
VP = 12 V
TA = 25 °C
Quasi-PeakMeasurement
test circuit 2
70
101
IOH
10.00
100.00
10
100 1000.00
1000 MHz
VDD
VOH = 24 V
60
100
50
max. spurious
signals
10–1
40
VOH = 3.8 V
10–2
30
10–3
20
10–4
10–5
–50
10
0
50
100
150
0
0.01
200 °C
1.00
1
10.00
100.00
10
100 1000.00
1000 MHz
f
TA
Fig. 3–16: Typical output leakage current
versus ambient temperature
18
0.10
Fig. 3–18: Typ. spectrum of supply voltage
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Micronas
HAL549
DATA SHEET
4. Type Description
Applications
4.1. HAL549
The HAL549 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic amplitude at the sensor position such as:
The HAL549 is a very sensitive unipolar switching sensor only sensitive to the magnetic north polarity (see
Fig. 4–1).
– solid state switches,
– contactless solution to replace micro switches,
The output turns low with the magnetic north pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic south pole.
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires only the magnetic north pole on the branded
side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: unipolar
VOL
– high sensitivity
BON
– typical BON: −5.5 mT at room temperature
BOFF
B
0
Fig. 4–1: Definition of magnetic switching points for
the HAL549
– typical BOFF: −3.6 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
−40 °C
−7.7
−5.9
−4.3
−5.4
−3.8
−2.1
1.6
2.1
2.8
−
−4.8
−
mT
25 °C
−7.2
−5.5
−3.8
−5
−3.6
−2
1.5
1.9
2.7
−
−4.5
−
mT
100 °C
−6.7
−5
−3.4
−4.9
−3.3
−1.9
1.2
1.7
2.6
−
−4.2
−
mT
140 °C
−7
−4.8
−3.0
−5.3
−3.1
−1.7
1
1.7
2.6
−
−4
−
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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HAL549
DATA SHEET
mT
0
HAL 549
TA = –40 °C
TA = 25 °C
BON –1
BOFF
–2
mT
0
TA = 100 °C
BON –1
BOFF
TA = 140 °C
–2
HAL 549
VDD = 4.3 V...24 V
BONmax
–3
–3
BONtyp
BON
–4
–4
–5
–5
BOFFmax
BONmin
BOFF
–6
–6
–7
–7
–8
BOFFtyp
BOFFmin
0
5
10
15
20
25
30 V
–8
–50
0
50
100
150
200 °C
TA, TJ
VDD
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
Fig. 4–3: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax refer
to junction temperature, whereas typical curves
refer to ambient temperature.
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HAL549
DATA SHEET
5. Application Notes
5.3. Start-Up Behavior
5.1. Ambient Temperature
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Characteristics (see Section 3.5. on
page 13).
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = IDD × VDD × R th
The initialization time consists of two parts: internal
power-up time and internal initialization time. During
the internal power-up time (some μsec.), the output
state may change. After the internal power-up time
and with a supply voltage higher than 3 V, the output
state for HAL549 is “On-state”. After ten(O), the output
will be high. The output will be switched to low if the
applied magnetic field “B” is below BON.
5.4. EMC and ESD
If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambienttemperature.
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as possible to the Hall sensor.
Applications with this arrangement passed the EMC
tests according to the international standard ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV
220 Ω
T Amax = T Jmax – ΔT
1
VEMC
VP
3
4.7 nF
Supply Voltage Below 4.3 V
1.2 kΩ
OUT
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see Section 3.5. on page 13).
RL
VDD
20 pF
2 GND
Fig. 5–1: Test circuit for EMC investigations
The devices contain a Power-on Reset (POR) and an
undervoltage reset. For 3 V < VDD < Vreset < 4.3 V, the
output state is “low” (reset state). For VDD < 3 V, the
output state is not defined.
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HAL549
DATA SHEET
6. Data Sheet History
1. Data Sheet “HAL549 Hall Effect Sensor with Undervoltage Reset”, May 27, 2004, 6251-611-1DS. First
release of the data sheet.
2. Data Sheet: “HAL549 Hall Effect Sensor with Undervoltage Reset”, Dec. 10, 2007,
DSH000022_002EN. Second release of the data
sheet. Major changes:
– Outline dimensions for SOT89B and TO92UA
updated
– Position parameters for sensitive areas in SOT89B
package added
– Pad size dimensions SOT89B updated
– Section “Ambient Temperature” updated
3. Data Sheet: “HAL549 Hall-Effect Sensor with Undervoltage Reset”, Jan. 30, 2009,
DSH000022_003EN. Third release of the data
sheet. Major changes:
– Section 1.5. “Solderability and Welding” updated
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
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Jan. 30, 2009; DSH000022_003EN
Micronas