Hardware Documentation P rel i m i n a r y D a ta Sh eet ® HAL 242x High-Precision Programmable Linear Hall-Effect Sensor Family Edition May 3, 2013 PD000211_001E HAL 242x PRELIMINARY DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas Trademarks – HAL Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, military, aviation, or aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET Contents Page Section Title 4 4 4 5 5 5 5 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Major Applications Features Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Pin Connections and Short Descriptions 6 6 7 7 7 7 10 12 13 2. 2.1. 2.2. 2.2.1. 2.2.2. 2.2.2.1. 2.2.2.2. 2.2.2.3. 2.2.2.4. 13 14 2.3. 2.4. Functional Description General Function Signal path and Register Definition Signal path Register Definition RAM registers EEPROM Registers NVRAM Registers Setpoint linearization accuracy (HAL2425 only) On-Board Diagnostic features Calibration of the sensor 15 15 19 19 19 19 20 20 21 23 23 24 24 25 26 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.5.1. 3.6. 3.7. 3.8. 3.9. 3.10. 3.11. 3.12. 3.12.1. Specifications Outline Dimensions Soldering, Welding and Assembly Dimensions of Sensitive Area Package Parameter and Position of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life TO92UT package Recommended Operating Conditions Characteristics Open-Circuit Detection Overvoltage and Undervoltage Detection Output Short Detection Parameter Output Voltage in Case of Error Detection Magnetic Characteristics Definition of Sensitivity Error ES 27 27 27 27 4. 4.1. 4.2. 4.3. Application Notes Application Circuit Use of two HAL 242x in Parallel Ambient Temperature 28 28 29 29 5. 5.1. 5.2. 5.3. Programming of the Sensor Programming Interface Programming Environment and Tools Programming Information 30 6. Data Sheet History Micronas May 3, 2013; PD000211_001E 3 HAL 242x PRELIMINARY DATA SHEET High-Precision Programmable Linear Hall-Effect Sensor Family The calculation of the individual sensor characteristics and the programming of the EEPROM can easily be done with a PC and the application kit from Micronas. 1. Introduction The sensors are designed for hostile industrial and automotive applications and operate with typically 5 V supply voltage in the junction temperature range from 40 °C up to 170 °C. The HAL 242x is available in the very small leaded package TO92UT-1/-2. HAL 242x is a new family of Micronas’ programmable linear Hall-effect sensors. This family consists of two members: the HAL 2420 and the HAL 2425. Both devices are universal magnetic field sensors with a linear output based on the Hall effect. Major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B=0 mT), and output voltage range are programmable in a non-volatile memory. The sensors have a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. Additionally, both sensors offer wire-break detection. The HAL 2425 offers 16 setpoints to change the output characteristics from linear to arbitrary or vice versa. Due to the sensor’s versatile programming characteristics and low temperature drifts, the HAL 242x is the optimal system solution for applications such as: – contact less potentiometers, – angle sensors (like throttle position, paddle position and EGR applications), – distance and linear movement measurements, – magnetic field and current measurement. 1.2. Features Table 1–1: Family member overview – high-precision linear Hall-effect sensor with 12-bit analog output Device Key Function HAL 2420 2 Setpoints (calibration points) – 16 setpoints for various output signal shapes (HAL 2425 only) HAL 2425 16 Setpoints – 16 bit digital signal processing The HAL 242x features a temperature-compensated Hall plate with spinning current offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM with redundancy and lock function for calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade digital signals. The easy programmability allows a 2-point calibration by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the final manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. In addition, the temperature compensation of the Hall IC can be fit to all common magnetic materials by programming first- and second-order temperature coefficients of the Hall sensor sensitivity. It is also possible to compensate offset drift over temperature generated by the customer application with a first-order temperature coefficient for the sensors offset. This enables operation over the full temperature range with high accuracy. 4 1.1. Major Applications – multiple customer-programmable magnetic characteristics in a non-volatile memory with redundancy and lock function – programmable temperature compensation for sensitivity and offset – magnetic field measurements in the range up to 200 mT – low output voltage drifts over temperature – active open-circuit (ground and supply line break detection) with 5 k pull-up and pull-down resistor, overvoltage and undervoltage detection – programmable clamping function – digital readout of temperature and magnetic field information in calibration mode – programming and operation of multiple sensors at the same supply line – active detection of output short between two sensors – high immunity against mechanical stress, ESD, and EMC – operates from TJ =40 °C up to 170 °C – operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V – operates with static magnetic fields and dynamic magnetic fields up to 2 kHz – overvoltage and reverse-voltage protection at all pins – short-circuit protected push-pull output May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 1.3. Marking Code 1.6. Pin Connections and Short Descriptions The HAL 242x has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Marking A HAL 2420 2420A HAL 2425 2425A Pin No. Pin Name Type Short Description 1 VSUP SUPPLY Supply Voltage 2 GND GND Ground 3 OUT I/O Push-Pull Output and Programming Pin 1 VSUP 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). OUT Pin 3 A: TJ = 40 °C to +170 °C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.3. on page 27. 2 GND Fig. 1–1: Pin configuration 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A Package: UT for TO92UT-1/-2 Type: 2420 or 2425 Example: HAL2425UT-A Type: Package: Temperature Range: 2425 TO92UT-1/-2 TJ = 40 °C to +170 °C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes. Micronas May 3, 2013; PD000211_001E 5 HAL 242x PRELIMINARY DATA SHEET In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The analog output is switched off during the communication. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. 2. Functional Description 2.1. General Function The HAL 242x is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted back to an analog voltage with ratiometric behavior, and buffered by a push-pull output transistor stage. The open-circuit detection provides a defined output voltage if the VSUP or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enable operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also reduces offset shifts due to mechanical stress from the package. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. The setting of a LOCK bit disables the programming of the EEPROM memory for all time. This bit cannot be reset by the customer. As long as the LOCK bit is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the output voltage. VSUP Internally Stabilized Supply and Protection Devices Temperature Dependent Bias Oscillator Switched Hall Plate A/D Converter Digital Signal Processing Temperature Sensor A/D Converter Open-circuit, Overvoltage, Undervoltage Detection Linearization 16 Setpoints EEPROM Memory D/A Converter Protection Devices Analog Output IO Programming Interface Lock Control GND Fig. 2–1: HAL 242x block diagram 6 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 2.2. Signal path and Register Definition 2.2.1. Signal path D Output Clamping A (Magnetic Ranges) Hall-Plate Barrel Shifter CFX MIC_COMP Micronas Offset & Gain Trimming CUST_COMP Customer Offset & Gain Trimming Gain & Offset Scaling block SETPT_IN SETPT Setpoint Linearization DAC Gain & Offset Scaling Only available with HAL2425 TEMP_ADJ -C- Micronas Temp-Sensor Trimming DAC Drift Compensation Output Clamping DAC GAINOFF Temp-Sensor DAC Fig. 2–2: Signal path of HAL 242x 2.2.2. Register Definition CFX The DSP is the major part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2–2 and Fig. 2–3. The CFX register is representing the magnetic field information directly after A/D conversion, decimation filter and magnetic range (barrel shifter) selection. The register content is not temperature compensated. The temperature variation of this register is specified in Section 3.12. on page 25 by the parameter RANGEABS. Terminology: GAIN: Name of the register or register value Gain: Name of the parameter The sensors signal path contains two kinds of registers. Registers that are readout only (RAM) and programmable registers (EEPROM & NVRAM). The RAM registers contain measurement data at certain positions of the signal path and the EEPROM registers have influence on the sensors signal processing. 2.2.2.1. RAM registers Note: During application design, it must be taken into consideration that CFX should never overflow in the operational range of the specific application and especially over the full temperature range. In case of a potential overflow the barrel shifter should be switched to the next higher range. This register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary between 32768...32767. CFX register values will increase for positive magnetic fields (south pole) on the branded side of the package (positive CFX values) and it will decrease with negative magnetic field polarity. TEMP_ADJ MIC_COMP The TEMP_ADJ register contains the calibrated temperature sensor information. TEMP_ADJ can be used for the sensor calibration over temperature. This register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary between 32768...32767. Micronas The MIC_COMP register is representing the magnetic field information directly after the Micronas temperature trimming. The register content is temperature compensated and has a typical gain drift over temperature of 0 ppm/k. Also the offset and its drift over temperature is typically zero. The register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary between 32768...32767. May 3, 2013; PD000211_001E 7 HAL 242x PRELIMINARY DATA SHEET CUST_COMP DAC The CUST_COMP register is representing the magnetic field information after the customer temperature trimming. For HAL 242x it is possible to set a customer specific gain of second order over temperature as well as a customer specific offset of first order over temperature. The customer gain and offset can be set with the EEPROM registers TCCO0, TCCO1 for offset and TCCG0...TCCG2 for gain. Details of these registers are described on the following pages. The DAC register offers the possibility to read the magnetic field information at the end of the complete signal path. The value of this register is then converted into an analog output voltage. The register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary between 32768...32767. MIC_ID1 and MIC_ID2 SETPT_IN (HAL2425 only) The SETPT_IN register offers the possibility to read the magnetic field information after the scaling of the input signal to the input range of the linearization block. For further details see the description of the EEPROM registers SCALE_GAIN and SCALE_OFFSET that are described in the next chapter. The register has a length of 16 bit and it is two’s-complement coded. Therefor the register value can vary between 32768...32767. SETPT (HAL2425 only) The SETPT register offers the possibility to read the magnetic field information after the linearization of the magnetic field information with 16 setpoints. This information is also required for the correct setting of the sensors DAC GAIN and OFFSET in the following block. The register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary between 32768...32767. The register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary between 32768...32767. The two registers MIC_ID1 and MIC_ID2 are used by Micronas to store production information like, wafer number, die position on wafer, production lot, etc. Both registers have a length of 16 bit each and are readout only. DIAGNOSIS The DIAGNOSIS register enables the customer to identify certain failures detected by the sensor. HAL 242x performs certain self tests during power-up of the sensor and also during normal operation. The result of these self tests is stored in the DIAGNOSIS register. DIAGNOSIS register is a 16 bit register. Bit no. Function Description 15:6 None Reserved 5 State Machine (DSP) Self test This bit is set to 1 in case that the statemachine self test fails. (continuously running) 4 EEPROM Self test This bit is set to 1 in case that the EEPROM self test fails. (Performed during power-up only) 3 ROM Check This bit is set to 1 in case that ROM parity check fails. (continuously running) 2 AD converter overflow This bit is set to 1 in case the input signal is too high, indicating a problem with the magnetic range. 1:0 None Reserved GAINOFF The GAINOFF register offers the possibility to read the magnetic field information after the DAC GAIN and OFFSET scaling. This register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary between 32768...32767. 8 Details on the sensor self tests can be found in Section 2.3. on page 13. May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET PROG_DIAGNOSIS The PROG_DIAGNOSIS register enables the customer to identify errors occurring during programming and writing of the EEPROM or NVRAM memory. The customer must either check the status of this register after each write or program command or alternatively the second acknowledge. Please check the Programming Guide for HAL 242x. The PROG_DIAGNOSIS register is a 16 bit register. The following table shows the different bits indicating certain errors possibilities. Bit no. Function Description 15:11 None Reserved 10 Charge Pump Error This bit is set to 1 in case that the internal programming voltage was to low 9 Voltage Error during Program/ Erase This bit is set to 1 in case that the internal supply voltage was to low during program or erase 8 NVRAM Error This bit is set to 1 in case that the programming of the NVRAM failed 7:0 Programming These bits are used for programming the memory Micronas May 3, 2013; PD000211_001E 9 HAL 242x PRELIMINARY DATA SHEET 2.2.2.2. EEPROM Registers EEPROM A D (Magnetic Ranges) Barrel Shifter Hall-Plate SCALE_GAIN SCALE_OFFSET SETPOINTx TCCOx TCCGx CUSTOMER SETUP DAC_GAIN DAC_OFFSET HAL2425 only Micronas Offset & Gain Trimming Customer Offset & Gain Trimming Offset & Gain Scaling Setpoint Linearization DAC Gain & Offset Scaling Digital Signal Processing Temp-Sensor -C- Micronas Temp-Sensor Trimming DAC Drift Compensation Output Clamping DAC DAC_CMPLO DAC_CMPHI Fig. 2–3: Details of EEPROM and Digital Signal Processing Table 2–1: Relation between Barrel Shifter setting and emulated magnetic range CUST_ID1 and CUST_ID2 The two registers CUST_ID1 and CUST_ID2 can be used to store customer information. Both registers have a length of 16 bit each. Barrel Shifter (Magnetic ranges) The signal path of HAL 242x contains a Barrel Shifter to emulate magnetic ranges. The customer can select between different magnetic ranges by changing the Barrel shifter setting. After decimation filter the signal path has a word length of 22 bit. The Barrel Shifter selects 16 bit out of the available 22 bit. Table 2–1: Relation between Barrel Shifter setting and emulated magnetic range BARREL SHIFTER Used bits Typ. magnetic range 0 22...7 not used 1 21...6 200 mT 2 20...5 100 mT 3 19...4 50 mT 4 18...3 25 mT 10 BARREL SHIFTER Used bits Typ. magnetic range 5 17...2 12 mT 6 16...1 6 mT The Barrel Shifter bits are part of the CUSTOMER SETUP register (bits 14...12). The CUSTOMER SETUP register is described on the following pages. Note: In case that the external field exceeds the magnetic field range the CFX register will be clamped either to 32768 or 32767 depending on the sign of the magnetic field. May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET Magnetic Sensitivity TCCG The TCCG (Sensitivity) registers (TCCG0...TCCG2) contain the customer setting temperature dependant gain factor. The multiplication factor is a second order polynomial of the temperature. All three polynomial coefficients have a bit length of 16 bit and they are two’s-complement coded. Therefore the register values can vary between 32768...32767. In case that the target polynomial is based on normalized values, then each coefficient can vary between 1 ... +1. To store each coefficient into the EEPROM it is necessary to multiply the normalized coefficients with 32768. Example: – Tccg0 = 0.5102 => TCCG0 = 16719 – Tccg1 = 0.0163 => TCCG1 = 536 – Tccg2 = 0.0144 => TCCG2 = 471 In case that the polynomial was calculated based on not normalized values of TEMP_ADJ and MIC_COMP, then it is not necessary to multiply the polynomial coefficients with a factor of 32768. Magnetic Sensitivity TCCO The TCCO (Offset) registers (TCCO0 and TCCO1) contain the parameters for temperature dependant offset correction. The offset value is a first order polynomial of the temperature. Both polynomial coefficients have a bit length of 16 bit and they are two’s-complement coded. Therefore the register values can vary between 32768...32767. In case that the target polynomial is based on normalized values, then each coefficient can vary between 1 ... +1. To store each coefficient into the EEPROM it is necessary to multiply the normalized coefficients with 32768. Sensitivity and Offset Scaling before setpoint linearization SCALE_GAIN/SCALE_OFFSET (HAL2425 only) The setpoint linearization uses the full 16 bit number range 0...32767 (only positive values possible). So the signal path should be properly scaled for optimal usage of all 16 setpoints. For optimum usage of the number range an additional scaling stage is added in front of the set point algorithm. The setpoint algorithm allows positive input numbers only. The input scaling for the linearization stage is done with the EEPROM registers SCALE_GAIN and SCALE_OFFSET. The register content is calculated based on the calibration angles. Both registers have a bit length of 16 bit and are two’s-complemented coded. Analog output signal scaling with DAC_GAIN/ DAC_OFFSET The required output voltage range of the analog output is defined by the registers DAC_GAIN (Gain of the output) and DAC_OFFSET (Offset of the output signal). Both register values can be calculated based on the angular range and the required output voltage range. They have a bit length of 16 bit and are two’s-complemented coded. Clamping Levels The clamping levels DAC_CMPHI and DAC_CMPLO define the maximum and minimum output voltage of the analog output. The clamping levels can be used to define the diagnosis band for the sensor output. Both registers have a bit length of 16 bit and are two’s-complemented coded. Both clamping levels can have values between 0% and 100% of VSUP. In case that the polynomial was calculated based on not normalized values of TEMP_ADJ and MIC_COMP, then it is not necessary to multiply the polynomial coefficients. In addition HAL2425 features a linearization function based on 16 setpoints. The setpoint linearization in general allows to linearize a given output characteristic by applying the inverse compensation curve. Each of the 16 setpoints (SETPT) registers have a length of 16 bit. The setpoints have to be computed and stored in a differential way. This means that if all setpoints are set to 0, then the linearization is set to neutral and a linear curve is used. Micronas May 3, 2013; PD000211_001E 11 HAL 242x PRELIMINARY DATA SHEET 2.2.2.3. NVRAM Registers Customer Setup The CUST_SETUP register is a 16 bit register that enables the customer to activate various functions of the sensor like, customer burn-in mode, diagnosis modes, functionality mode, customer lock, etc. Table 2–2: Functions in CUST_SETUP register Bit no. Function Description 15 None Reserved 14:12 Barrel Shifter Magnetic Range (see Section Table 2–1: on page 10) 11:10 None Reserved 9:8 Output Short Detection 0: Disabled 1: High & low side over current detection -> OUT = VSUP in error case 2: High & low side over current detection -> OUT = GND in error case 3: Low side over current detection -> OUT = Tristate in error case 7 Error Band Error band selection for locked devices (Customer Lock bit set). The Output Short Detection feature is implemented to detect an short circuit between two sensor outputs. The customer can define how the sensor should signalize a detected short circuit (see table above). The time interval in which the sensor is checking for an output short and the detectable short circuit current are defined in Section 3.10. on page 24. This feature should only be used in case that two sensors are used in one module. In case that the Output Short Detection is not active both sensors will try to drive their output voltage and the resulting voltage will be within the valid signal band. Note: The Output Short Detection feature is only active after setting the Customer Lock bit and a power-on reset. 0: High error band (VSUP) 1: Low error band (GND) The sensor will always go to high error band as long as it is not locked (Customer Lock bit not set). (see Section 3.11. on page 24) 6 None Reserved 5 Functionality Mode 1: Normal 4 Communication Mode (POUT) Communication via output pin 0: Disabled 1: Enabled 3 Overvoltage Detection 0: Overvoltage detection active 1: Overvoltage detection disabled 2 Diagnosis Latch Latching of diagnosis bits 0: No latching 1: Latched till next POR (power-on reset) 1 Diagnosis 0: Diagnosis errors force output to the selected error band 1: Diagnosis errors do not force output to the selected error band 0 12 Customer Lock Bit must be set to 1 to lock the sensor memory May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 2.2.2.4. Setpoint linearization accuracy (HAL2425 only) The set point linearization in general allows to linearize a given output characteristic by applying the inverse compensation curve. For this purpose the compensation curve will be divided into 16 segments with equal distance. Each segment is defined by two setpoints, which are stored in EEPROM. Within the interval, the output is calculated by linear interpolation according to the position within the interval. The constraint of the linearization is that the input characteristic has to be a monotonic function. In addition to that it is recommended that the input does not have a saddle point or inflection point, i.e. regions where the input is nearly constant. This would require a high density of set points 2.3. On-Board Diagnostic features The HAL 242x features two groups of diagnostic functions. The first group contains basic functions that are always active. The second group can be activated by the customer and contains supervision and self-tests related to the signal path and sensor memory. 4 4 x 10 Diagnostic features that are always active: 3 – Wire break detection for supply and ground line 2 – Undervoltage detection 1 – Thermal supervision of output stage (overcurrent, short circuit, etc.) 0 -1 Diagnostic features that can be activated by customer: -2 Linearized Distorted Compensation -3 – Overvoltage detection – EEPROM self-test at power-on -4 -4 -3 -2 -1 0 1 2 3 4 4 x 10 – Continuous ROM parity check – Continuous state machine self-test Fig. 2–4: Linearization - Principle – Adder overflow output The sensor indicates a fault immediately by switching the output signal to the selected error band in case that the diagnostic mode is activated by the customer. The customer can select if the output goes to the upper or lower error band by setting bit number 7 in the CUST_SETUP register (Table 2–2 on page 12). Further details can be found in Section 3.11. on page 24. ysn+1 yl ysn xsn xnl The sensor switches the output to tristate if an over temperature is detected by the thermal supervision. The sensor switches the output to ground in case of a VSUP wire break. xsn+1 input Fig. 2–5: Linearization - Detail xnl: non linear distorted input value yl: linearized value remaining error Micronas May 3, 2013; PD000211_001E 13 HAL 242x PRELIMINARY DATA SHEET 2.4. Calibration of the sensor For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming (HAL-APB V1.5) and the corresponding LabView based programming environment for the input of the register values. For the individual calibration of each sensor in the customer application, a two point calibration is recommended. A detailed description of the calibration software, calibration algorithm, programming sequences and register value calculation can be found in the Application Note “HAL 242x Programming Guide”. 14 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3–1: TO92UT-2 Plastic Transistor Standard UT package, 3 leads Weight approximately 0.12 g Micronas May 3, 2013; PD000211_001E 15 HAL 242x PRELIMINARY DATA SHEET Fig. 3–2: TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g 16 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET Fig. 3–3: TO92UT-2: Dimensions ammopack inline, not spread Micronas May 3, 2013; PD000211_001E 17 HAL 242x PRELIMINARY DATA SHEET Fig. 3–4: TO92UT-1: Dimensions ammopack inline, spread 18 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 3.2. Soldering, Welding and Assembly Please check the Micronas Document “Guidelines for the Assembly of HAL Packages” for further information about solderability, welding, assembly, and second-level packaging. The document is available on the Micronas website or on the service portal. 3.3. Dimensions of Sensitive Area 250 x 250 μm 3.4. Package Parameter and Position of Sensitive Areas TO92UT-1/-2 A4 0.4 mm nominal Bd 0.3 mm D1 4.05 mm ± 0.05 mm H1 min. 22.0 mm max. 24.1 mm y 1.55 mm nominal 3.5. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit Condition VSUP Supply Voltage 1 8.5 18 10 18 V V t < 96 h t<1h Time values are not additive VOUT Output Voltage 3 61) 18 V t<1h VOUT VSUP Excess of Output Voltage over Supply Voltage 3,1 2 V TJ Junction Temperature under Bias 50 1902) °C VESD ESD Protection 8.03) 8.03) kV 1 or 3 1) internal protection resistor = 50 2) For 96h, please contact Micronas 3) for other temperature requirements. AEC-Q-100-002 (100 pF and 1.5 k) Micronas May 3, 2013; PD000211_001E 19 HAL 242x PRELIMINARY DATA SHEET 3.5.1. Storage and Shelf Life TO92UT package The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for two years from the date code on the package. 3.6. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit Remarks VSUP Supply Voltage 1 4.5 5.7 5 6 5.5 6.5 V Normal operation During programming IOUT Continuous Output Current 3 1.2 1.2 mA RL Load Resistor 3 5.0 10 k CL Load Capacitance 3 0.33 47 600 nF NPRG Number of Memory Programming Cycles1) 100 cycles 0°C < Tamb < 55°C TJ Junction Temperature2) 40 40 40 125 150 170 °C for 8000 h for 2000 h for 1000 h Time values are not additive Can be pull-up or pull-down resistor 1) In the EEPROM, it is not allowed to program only one single address within a 'bank' in the memory. In case of programming one single address the complete bank has to be programmed 2) Depends on the temperature profile of the application. Please contact Micronas for life time calculations. Time values are not additive 20 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 3.7. Characteristics at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VSUP = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions ISUP Supply Current over Temperature Range 1 7 10 mA Resolution6) 3 12 bit ratiometric to VSUP 1) DNL Differential Non-Linearity of D/A Converter4) 3 0.9 0 0.9 LSB Test limit at 25 °C ambient temperature INL Non-Linearity of Output Voltage over Temperature7) 3 0.3 0 0.3 %VSUP 2)For Vout = 0.35 V ... 4.65 V; TJ=25 °C VSUP = 5 V ; Linear Setpoint Characteristics INLSIN Non-Linearity of Output Voltage7) 3 2.4 0 2.4 %VSUP 2)For Vout = 0.35 V ... 4.65 V; VSUP = 5 V ; Ideal sinusoidal magnetic field as input signal in the angular range of 85° ER Ratiometric Error of Output over Temperature (Error in VOUT / VSUP) 3 0.25 0 0.25 % Voffset Offset Drift over Temperature Range7) VOUT(B = 0 mT)25°C VOUT(B = 0 mT)max 3 0 0.1 0.2 %VSUP VSUP = 5 V ; BARREL SHIFTER = 3 (±50 mT) VOUTCL Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range6) 3 11 0 11 mV VOUTCH Accuracy of Output Voltage at Clamping High Voltage over Temperature Range6) 3 11 0 11 mV VOUTH Upper Limit of Signal Band3) 3 93 %VSUP VSUP = 5 V, 1 mA IOUT 1 mA VOUTL Lower Limit of Signal Band3) 3 7 %VSUP VSUP = 5 V, 1 mA IOUT 1 mA fOSC Internal Oscillator Frequency over Temperature Range 4 MHz Max of [VOUT5 VOUT4.5 and VOUT5.5 VOUT5] at VOUT = 10% and 90% VSUP RL = 5 k, VSUP = 5 V Spec values are derived from resolution of the registers DAC_CMPHI/LO and Voffset. 1) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096 2) if more than 50% of the selected magnetic field range is used and the temperature compensation is suitable. INL = VOUT - VOUTLSF with VOUTLSF = Least Square Fit through measured output voltage 3) Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH 4) External package stress or overmolding might change this parameter 5) 5% might exceed limit. Definition: 5 out of 100 continuously measured VOUT samples are out of limit 6) Guaranteed by Design 7) Characterized on small sample size, not tested Micronas May 3, 2013; PD000211_001E 21 HAL 242x PRELIMINARY DATA SHEET Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions tr(O) Step Response Time of Output7) 3 0.5 0.6 ms CL = 10 nF, time from 10% to 90% of final output voltage for a step like signal Bstep from 0 mT to Bmax tPOD Power-Up Time (Time to Reach Certain Output Accuracy)7) 3 1.7 8.0 ms ms Additional error of 1% Full-Scale Full accuracy BW Small Signal Bandwidth (3 dB)7) 3 2 kHz VOUTnpp Peak-Peak Output Noise Voltage7) 3 4.5 mV 5) ROUT Output Resistance over 3 Recommended Operating Range 1 10 VOUTLmax VOUT VOUTHmin BARREL SHIFTER = 4 (±25 mT); C = 10 nF (VSUP & VOUT to GND) TO92UT Package Thermal Resistance Rthja Junction to Air 235 K/W Measured with a 1s0p board Rthjc Junction to Case 61 K/W Measured with a 1s0p board Rthjs Junction to Solder Point 128 K/W Measured with a 1s1p board 1)Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096 2)if more than 50% of the selected magnetic field range is used and the temperature compensation is suitable. INL = VOUT - VOUTLSF with VOUTLSF = Least Square Fit through measured output voltage 3) Signal Band Area with full accuracy is located between V OUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH 4) External package stress or overmolding might change this parameter 5) 5% might exceed limit. Definition: 5 out of 100 continuously measured VOUT samples are out of limit 6) Guaranteed by Design 7) Characterized 22 on small sample size, not tested May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 3.8. Open-Circuit Detection at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C Symbol Parameter Pin No. Min. Typ. Max. Unit Comment VOUT Output Voltage at Open VSUP Line 3 0 0 0.15 V VSUP = 5 V RL = 10 kto 200 k 0 0 0.2 V VSUP = 5 V RL = 5 kto 10 k 4.85 4.9 5.0 V VSUP = 5 V RL = 10 kto 200 k 4.8 4.9 5.0 V VSUP = 5 V RL = 5 kto 10 k VOUT Output Voltage at Open GND Line 3 RL: Can be pull-up or pull-down resistor 3.9. Overvoltage and Undervoltage Detection at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking Symbol Parameter Pin No. Min. Typ. Max. Unit VSUP,UV Undervoltage Detection Level 1 3.3 3.9 4.3 V VSUP,UVhyst Undervoltage Detection Level Hysteresis1) 1 200 mV VSUP,OV Overvoltage Detection Level 1 5.6 6.2 6.9 V VSUP,OVhyst Overvoltage Detection Level Hysteresis1) 1 225 mV Test Conditions 1) Characterized on small sample size, not tested Micronas May 3, 2013; PD000211_001E 23 HAL 242x PRELIMINARY DATA SHEET 3.10.Output Short Detection Parameter at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking Symbol Parameter Pin No. Min. Typ. Max. Unit tOCD Over Current Detection Time1) 3 128 μs tTimeout Time Period without Over Current Detection1) 3 256 ms IOVC Detectable Output Short Current1) 3 10 mA 1) Characterized Test Conditions on small sample size, not tested Please see Table 2–2 on page 14 for further details. 3.11. Output Voltage in Case of Error Detection at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking Symbol Parameter Pin No. Min. Typ. Max. Unit VSUP,DIAG Supply Voltage required to get defined Output Voltage Level1) 1 2.1 V VError,Low Output Voltage Range of Lower Error Band1) 3 0 4 %VSUP VSUP > VSUP,DIAG 5 k >= RL <= 200 k VError,High Output Voltage Range of Upper Error Band1) 3 96 100 %VSUP VSUP > VSUP,DIAG 5 k >= RL <= 200 k 1) Characterized Test Conditions on small sample size, not tested Vout [V] VSUP,DIAG VSUP,UV 5 VSUP,OV VSUP [V] : Output Voltage will be between VSUP and GND : CUST_SETUP Register Bit no. 7 set to 1 VOUT 4% VSUP : CUST_SETUP Register Bit no. 7 set to 0 VOUT 96% VSUP Fig. 3–5: Behavior of HAL 242x for different VSUP 24 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 3.12. Magnetic Characteristics at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VSUP = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions SENS Magnetic Sensitivity 170 mV/ mT Programmable VSUP = 5 V and TJ = 25 °C; BARREL SHIFTER= ±12 mT Vout = 4 V 100 200 235 % See Section 2.2. on page 7 for CFX register definition. RANGEABS Absolute Range of CFX Register (Magnetic Range)1) BOffset Magnetic Offset1) 3 0.4 0 0.4 mT B = 0 mT, IOUT = 0 mA, TJ = 25 °C, unadjusted sensor BOffset/T Magnetic Offset Change due to TJ1) 3 5 0 5 T/K B = 0 mT, IOUT = 0 mA BARREL SHIFTER = 3 (±50 mT) ES Error in Magnetic Sensitivity 3 1 0 1 % VSUP = 5 V BARREL SHIFTER = 3 (±50 mT) 1) Characterized on small sample size, not tested Micronas May 3, 2013; PD000211_001E 25 HAL 242x PRELIMINARY DATA SHEET 3.12.1. Definition of Sensitivity Error ES ES is the maximum of the absolute value of 1 minus the quotient of the normalized measured value1) over the normalized ideal linear2) value: ES = max abs meas ------------ – 1 ideal Tmin, Tmax In the below example, the maximum error occurs at °C: 10 ES = 1.001 ------------- – 1 = 0.8% 0.993 1) normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 °C 2) normalized to achieve a value of 1 at 25 °C ideal 200 ppm/k 1.03 relative sensitivity related to 25 °C value least-square-fit straight-line of normalized measured data measurement example of real sensor, normalized to achieve a value of 1 of its least-square-fit straight-line at 25 °C 1.02 1.01 1.001 1.00 0.993 0.99 0.98 –50 –25 -10 0 25 50 75 100 temperature [°C] 125 150 175 Fig. 3–6: ES definition example 26 May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 4. Application Notes 4.3. Ambient Temperature 4.1. Application Circuit Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). For EMC protection, it is recommended to connect one ceramic 47 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. T J = T A + T VSUP 47 nF OUT At static conditions and continuous operation, the following equation applies: GND T = I SUP V SUP R thjx HAL242x 47 nF Fig. 4–1: Recommended application circuit 4.2. Use of two HAL 242x in Parallel Two different HAL 242x sensors which are operated in parallel to the same supply and ground line can be programmed individually as the communication with the sensors is done via their output pins. VSUP OUT A 47 nF HAL242x Sensor A 47 nF HAL242x Sensor B For typical values, use the typical parameters. For worst case calculation, use the max. parameters for ISUP and Rthjx (x is representing the different Rth value, like junction to ambient Rthja), and the max. value for VSUP from the application. For VSUP = 5.5 V, Rth = 235 K/W, and ISUP = 10 mA, the temperature difference T = 12.93 K. For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: OUT B T Amax = T Jmax – T 47 nF GND Fig. 4–2: Parallel operation of two HAL 242x Micronas May 3, 2013; PD000211_001E 27 HAL 242x PRELIMINARY DATA SHEET 5. Programming of the Sensor tbittime HAL 242x features two different customer modes. In Application Mode the sensor provides a ratiometric analog output voltage. In Programming Mode it is possible to change the register settings of the sensor. tbittime or logical 0 After power-up the sensor is always operating in the Application Mode. It is switched to the Programming Mode by a pulse on the sensor output pin. tbittime tbittime or 5.1. Programming Interface logical 1 In Programming Mode the sensor is addressed by modulating a serial telegram on the sensors output pin. The sensor answers with a modulation of the output voltage. 50% 50% 50% 50% Fig. 5–1: Definition of logical 0 and 1 bit A logical “0” is coded as no level change within the bit time. A logical “1” is coded as a level change of typically 50% of the bit time. After each bit, a level change occurs (see Fig. 5–1). A description of the communication protocol and the programming of the sensor is available in a separate document (Application: HAL 242x Programming Guide). The serial telegram is used to transmit the EEPROM content, error codes and digital values of the angle information from and to the sensor. Table 5–1: Telegram parameters (All voltages are referenced to GND.) Symbol VOUTL VOUTH Parameter Voltage for Output Low Level during Programming through Sensor Output Pin Pin No. Limit Values 3 Voltage for Output High Level 3 during Programming through Sensor Output Pin Unit Test Conditions Min. Typ. Max. 0 0.2*VSUP V 0 1 V 0.8*VSUP VSUP V 4 5.0 V for VSUP = 5 V Supply voltage for bidirectional communication via output pin. VSUPProgram VSUP Voltage for EEPROM programming (after PROG and ERASE) 1 5.7 6.0 6.5 V tbittime Biphase Bit Time 3 900 1000 1100 μs Slew rate 3 2 V/μs 28 for VSUP = 5 V May 3, 2013; PD000211_001E Micronas HAL 242x PRELIMINARY DATA SHEET 5.2. Programming Environment and Tools For the programming of HAL 242x during product development and also for production purposes a programming tool including hardware and software is available on request. It is recommended to use the Micronas tool kit (HAL-APB V1.x & Lab View Programming Environment) in order to easy the product development. The details of programming sequences are also available on request. Note: For production HAL-APB V1.5 or higher must be used. 5.3. Programming Information For reliability in service, it is mandatory to set the LOCK bit to one and the POUT bit to zero after final adjustment and programming of HAL 242x. The success of the LOCK process should be checked by reading the status of the LOCK bit after locking and by a negative communication test after a power on reset. It is also mandatory to check the acknowledge (first and second) of the sensor or to read/check the status of the PROG_DIAGNOSIS register after each write and store sequence to verify if the programming of the sensor was successful. Please check HAL 242x Programming Guide for further details. Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Note: Please check also the “HAL242x Programming Guide”. It contains additional information and instructions about the programming of the devices. Micronas May 3, 2013; PD000211_001E 29 HAL 242x PRELIMINARY DATA SHEET 6. Data Sheet History 1. Advance Information: “HAL 242x High-Precision Programmable Linear Hall-Effect Sensor Family”, Dec. 18, 2012, AI000168_001EN. First release of the advance information. 2. Preliminary Data Sheet: “HAL 242x High-Precision Programmable Linear Hall-Effect Sensor Family”, May 3, 2013, PD000211_001E. First release of the preliminary data sheet. Major changes: – Outline Dimensions for TO92UT-1 (spread) added – Recommended Operating Conditions: definition of NPRG changed – Characteristics: min./max. values for INLSIN added – Magnetic Characteristics: max. value for SENS changed Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com 30 May 3, 2013; PD000211_001E Micronas