RENESAS HAT3015T

HAT3015T
Silicon N/P Channel Power MOS FET
High Speed Power Switching
REJ03G0405-0200
Rev.2.00
Sep.07.2004
Features
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
TSSOP-8
8
D
1
D
87
5
G
4
G
12
34
1, 8
3, 6
4, 5
2, 7
Drain
Source
Gate
NC
S6
S3
MOS1
Nch
65
MOS2
Pch
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse drain current
Channel dissipation
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Pch Note3
Nch
200
±15
0.5
2
0.5
1
Pch
–200
±15
–0.25
–1
–0.25
1
Unit
V
V
A
A
A
W
1.5
150
–55 to +150
1.5
150
–55 to +150
W
°C
°C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Rev.2.00, Sep.07.2004, page 1 of 3
HAT3015T
Electrical Characteristics
(Ta = 25°C)
• N Channel
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leak current
Zero Gate voltage Drain current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–Drain diode forward voltage
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
Min
200
±15
—
—
1.0
—
—
—
0.56
—
—
—
—
—
—
Typ
Max
Unit
—
—
—
—
—
1.6
1.9
2.4
0.86
120
29
10
10
14
24
—
—
±10
5
2.1
2.2
2.7
5.5
—
—
—
—
—
—
—
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
tf
VDF
—
—
9
0.9
—
1.4
ns
V
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
Min
–200
±15
—
—
–1.0
—
—
—
0.29
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
5.0
6.0
7.0
0.45
140
37
10
12
9
25
15
–0.9
Max
—
—
±10
–5
–2.0
6.2
7.5
10.0
—
—
—
—
—
—
—
—
–1.4
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = 200 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 0.5 A, VGS = 10 V Note4
ID = 0.5 A, VGS = 4 V Note4
ID = 2 A, VGS = 5 V Note4
ID = 0.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0
f = 1 MHz
VGS = 5 V, ID = 0.5 A
VDD ≅ 30 V
IF = 0.5 A, VGS = 0 Note4
• P Channel
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leak current
Zero Gate voltage Drain current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–Drain diode forward voltage
Notes: 4. Pulse test
Rev.2.00, Sep.07.2004, page 2 of 3
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = –200 V, VGS = 0
VDS = –10 V, I D = –1 mA
ID = –0.25 A, VGS = –10 V Note4
ID = –0.25 A, VGS = – 4 V Note4
ID = –1 A, VGS = – 5 V Note4
ID = –0.25 A, VDS = –10 V Note4
VDS = –10 V, VGS = 0
f = 1 MHz
VGS = –5 V, ID = –0.25 A
VDD ≅ –30 V
IF = –0.25 A, VGS = 0 Note4
HAT3015T
Package Dimensions
As of January, 2003
Unit: mm
4.40
3.00
3.30 Max
8
5
1
4
0.65
1.0
*0.22 +0.08
–0.07
0.13 M
0.20 ± 0.06
6.40 ± 0.20
0.07 +0.03
–0.04
0.10
*0.17 ± 0.05
0.15 ± 0.04
1.10 Max
0.805 Max
0˚ – 8˚ 0.50 ± 0.10
Package Code
JEDEC
JEITA
Mass (reference value)
*Dimension including the plating thickness
Base material dimension
TTP-8D
—
—
—
Ordering Information
Part Name
HAT3015T-EL-E
Quantity
3000 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Sep.07.2004, page 3 of 3
Sales Strategic Planning Div.
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