RENESAS HA16342NT

HA16341NT/FP, HA16342NT/FP
Redundant Secondary Switching Power Supply Controller
REJ03F0148-0400
(Previous: ADE-204-035C)
Rev.4.00
Jun 15, 2005
Description
The HA16341NT/FP and the HA16342NT/FP are switching regulator control ICs for the off-line converters of
redundant power supplies.
The HA16342NT/FP is reverse current detection less version of the HA16341NT/FP.
The HA16341NT/FP have the functions of current sharing and hot swap control for redundancy. These functions
enable high efficiency and high reliability for switching power supplies.
Combination the HA16341 with the HA16141 is suitable for the redundant AC to DC converters.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Secondary-side synchronous rectification control
Main switching controller
Dead-time adjustment for synchronous rectification MOS
Current share function with line resistance compensation
Hot swap power MOS FET control
Remote on/off function, FAIL output function
Synchronized switching with primary side
Soft start function
Maximum duty adjustment
Overcurrent limiting, overcurrent shutdown functions
Reverse current detection (only the HA16341NT/FP)
Light load detection
OVP function
VCC pin UVL function
Ordering Information
Type No.
HA16341NT
HA16342NT
HA16341FP
HA16342FP
Rev.4.00 Jun 15, 2005 page 1 of 19
Package Code
DP-24TS
FP-26DT
HA16341NT/FP, HA16342NT/FP
Pin Arrangement
HA16341NT, HA16342NT
(DP-24TS)
HA16341FP, HA16342FP
(FP-26DT)
CS(+)
1
24
CF(+)
CS(+)
1
26
CF(+)
CS(−)
2
23
CF(−)
CS(−)
2
25
CF(−)
MT
3
22
CFo
MT
3
24
CFo
CB
4
21
CFB
CB
4
23
CFB
Cin
5
20
EIN
SGND
6
19
EOUT
PGND
TAB
TAB
PGND
Cin
5
22
EIN
SGND
6
21
EOUT
PGND
7
20
PGND
PGND
TAB
TAB
PGND
PG1
7
18
MF OUT
FAIL
8
17
VCC
PG1
8
19
MF OUT
Trig
9
16
MR OUT
FAIL
9
18
VCC
CT
10
15
PWM OUT
Trig
10
17
MR OUT
SS
11
14
HSP
CT
11
16
PWM OUT
DB
12
13
Vref
SS
12
15
HSP
DB
13
14
Vref
(Top view)
(Top view)
Pin Functions
Pin No.
DP-24TS
Symbol
FP-26DT
Pin Name
1
2
1
2
CS(+)
CS(−)
Current sense amp input (+)
Current sense amp input (–)
3
4
5
6
7
8
3
4
5
6
8
9
MT
CB
Cin
SGND
PG1
FAIL
Current sense amp output
Current bus output
Line resistance compensation input
Signal ground
Remote on/off
FAIL output (open-drain)
9
10
Trig
External synchronization input
10
11
11
12
CT
SS
Timing capacitance
Soft start
12
13
DB
Dead band
13
14
15
14
15
16
Vref
HSP
PWM OUT
Vref (5 V)
Hot swap output
PWM output
16
17
18
17
18
19
MR OUT
VCC
MF OUT
MR output
Power supply voltage
MF output
19
20
21
21
22
23
EOUT
EIN
CFB
Error amp output
Error amp input
Current share feedback output
22
24
CFo
Current share differential amp output
23
24
25
26
CF(–)
CF(+)
Current share differential amp input (–)
Current share differential amp input (+)
TAB
TAB, 7, 20
PGND
Power ground
Rev.4.00 Jun 15, 2005 page 2 of 19
HA16341NT/FP, HA16342NT/FP
Block Diagram
Current share input
Error amp.
+
OP1
−
+ −
CT'
CS(−)
+
R
OP1-2
−
EOUT
19R
S
Q
latch D
R
Q
OCL
R
2R
+ 0dB
2R
−
R
OP6
+
R
1.25V
+
OP4
−
+
Cin
OP2
−
SGND
TAB
S
latch A
R
Q
+
−
S2
E/IN
1.187V
+
−
to latch B reset
Start-up latch
initial: Lo
from B
1.25V
OCL
−
+
Driver
PWM OUT
Driver
SW2
−12mV
Start-up latch
initial: Hi
Reverse
current
comp.
(only HA16341)
CF(−)
CFo
+
−
Hi: PWM ON
Light load detector
−
20dB
10k
DB generator
HSP
1k
SW2 on
at HSP Hi
CS(+)
R
RS-FF
PGND
R
CF(+)
1k
6dB
E/IN = 95% comp.
PG1
CFB
− 0dB
OP5
2R 1.25V
+
OP3
−
CB
1.25V
VZ = 6.8V
2R
26dB
MT
EIN
+
R
VZ = 1.24V
CT level
compression
Point B
−
2R
+
+
Hi: 0.7V
Lo: 0.5V
90k
TAB
CS(+)
PGND
Dead Band adjust
Driver
16 pulse
delay
UVL1
MF OUT
VCC
+
−
Vref
UVL2
SS comp.
−
+
SS
S1
RS-FF
S
latch B
Q
R
Vref 5V
169µA
CT
Vref 5V
100k
128.5k
Trig
−
+
2.5V
+
−
Exit trigger control
Delay
S
Q
latch C
R
Q
RS-FF
939µA
Driver
Vref
MR OUT
UVL2
Hi: stop
SW1
OVP
SW1 on: 1.3V
SW1 off: 3.4V
+
−
from Trig
7.5V
+
PG1
DB
−
PG1
50k
Hi: 2.5V
Lo: 2.0V
FAIL
FAIL
Oscillator
Unit R: Ω
C: F
Rev.4.00 Jun 15, 2005 page 3 of 19
HA16341NT/FP, HA16342NT/FP
Absolute Maximum Ratings
(Ta = 25°C)
Item
Ratings
Unit
Note
Supply Voltage
VCC
18
V
DC output current1
Io1
±0.1
A
PWM OUT *1
Peak output current1
Iopeak1
±1.0
A
PWM OUT *2
DC output current2
Io2
±0.2
A
MF OUT *1
Peak output current2
Iopeak2
±2.0
A
MF OUT *2
DC output current3
Io3
±0.1
A
MR OUT *1
Peak output current3
Iopeak3
±1.0
A
MR OUT *2
DC output current4
Io4
–
mA
CB OUT
DC output current5
Io5
±500
µA
CFB OUT
DC output current6
Io6
20
mA
FAIL OUT
DC output current7
Io7
–5.0
mA
Vref OUT
Peak output current4
Iopeak4
0.5
A
HSP sink
DC output current8
Io8
±500
µA
MT OUT
DC output current9
Io9
±500
µA
CFo OUT
DC output current10
Io10
6
mA
EOUT sink
TRIG terminal voltage
Vtrigmax
–1.5 to VCC
V
CT terminal voltage
VCTmax
–0.3 to Vref
V
Vref terminal voltage
Vrefmax
–0.3 to Vref
V
SS terminal voltage
Vssmax
–0.3 to Vref
V
EIN terminal voltage
VEINmax
–0.3 to Vref
V
EOUT terminal voltage
VEOUTmax
–0.3 to VCC
V
PG1 terminal voltage
VPG1max
–0.3 to Vref
V
FAIL terminal voltage
VFAILmax
–0.3 to VCC
V
PWM OUT terminal voltage
VoPWMmax
–0.3 to VCC
V
MR OUT terminal voltage
VoMRmax
–0.3 to VCC
V
MF OUT terminal voltage
VoMFmax
–0.3 to VCC
V
HSP terminal voltage
VoHSPmax
–0.3 to VCC
V
CFB terminal voltage
VCFBmax
–0.3 to Vref
V
CS(+) terminal voltage
VCS(+)max
–0.3 to Vref
V
CS(–) terminal voltage
VCS(−)max
–0.3 to Vref
V
MT terminal voltage
VMTmax
–0.3 to Vref
V
Cin terminal voltage
VCinmax
–0.3 to Vref
V
Notes: 1. VDS = 10 V max. Therefore test condition must be VOH = VCC –10 V or over , VOL = 10 V or under.
2. VDS = 10 V max. Pulse duration ≤ 10 ms
Rev.4.00 Jun 15, 2005 page 4 of 19
Symbol
HA16341NT/FP, HA16342NT/FP
Absolute Maximum Ratings (cont.)
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Note
CF(+) terminal voltage
VCF(+)max
–0.3 to Vref
V
CF(−) terminal voltage
VCF(−)max
–0.3 to Vref
V
CFo terminal voltage
VCFomax
–0.3 to Vref
V
CB terminal voltage
VCBmax
–0.3 to Vref
V
DB terminal voltage
VDBmax
–0.3 to Vref
V
Maximum power dissipation
PT
4.17
W
1
Operating temperature
Topr
–40 to +105
°C
Storage temperature
Tstg
–55 to +150
°C
Junction temperature
Tj
150
°C
Note: 1. This is allowable value up to Ta = 25°C.
Derate by θj-a = 30°C/W above that temperature.
θj-a = 30°C/W is the case that HA16341NT is mounted on 30% wiring density glass epoxy board (105 mm ×
76.2 mm × 1.6 mmt) and HA16341FP is mounted on a board which thermal resistance is 23°C/W because of
θj-pin (SOP) = 7°C/W typ.
Maximum Power Dissipation PT (W)
5.0
4.5
4.17
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
−30
Rev.4.00 Jun 15, 2005 page 5 of 19
−10
30
50
70
90
110
10
Ambient Temperature Ta (°C)
130
150
170
HA16341NT/FP, HA16342NT/FP
Electrical Characteristics
(Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB,
GvOP4 = 40dB, RDB = 1.8kΩ)
• Current share
Item
CB output Hi voltage
Symbol
VCBH
Min
2.5
Typ
–
Max
–
Unit
V
CB output Lo voltage
CFB output Lo voltage
VCBL
VCFBL
CFB output typ voltage
–
–
–
–
25
100
mV
mV
VCFBtyp
1.19
1.25
1.31
V
OP1 input offset voltage
CS(+) input bias current
CS(−) input bias current
Cin input bias current
OP4 input resistance
VioOP1
IibCS(+)
IibCS(−)
IibCin
Rsin
–
–
–
–
0.75
–
–20
0.2
0.2
1.00
(1)
–30
1.0
1.0
1.25
mV
µA
µA
µA
kΩ
Open loop gain
OP1−OP6
Avo
(70)
80
–
dB
1
Band width
OP1−OP6
BWCS
–
700
–
kHz
1
OCL detector threshold
voltage
VthOCL
59.5
62.5
65.5
mV
CS(+) terminal voltage
sensing
Light load detector
threshold Hi voltage
VthHLL
(2.0)
3.5
(5.0)
mV
CS(+) terminal voltage
sensing
1
Light load detector
threshold Lo voltage
VthLL hysteresis
VthLLL
(1.0)
2.5
(4.0)
mV
CS(+) terminal voltage
sensing
1
dVthLL
(0.5)
1.0
(1.5)
mV
VthRC
–6
–12
–18
mV
CS(+) terminal voltage
sensing
Typ
1.19
–10
0.3
Max
1.23
–13
0.6
Unit
V
µA
V
Test Conditions
95% typ of reference 1.25V
VHSP = 5V, VEIN = 2V
VEIN = 1V, Iosink = 50mA
Reverse current detector
threshold Hi voltage
Test Conditions
Note
Iosource = 300µA
VCS(+) = 1V
VCS(+) = 0V, RCB = 10kΩ
Iosink = 100µA, HSP ON
VCS(+) = 0V, VCB = 0.1V
VCS(+) = 0V, VCB = 0V
RfOP4 = 1kΩ, HSP ON
1
VCS(+) = 0V, VCS(–) = 0V
VCS(+) = 0V, VCS(–) = 0V
Vcin = 0V
1, 2
1
3
Notes: 1. Design spec.
2. Temperature coefficient is 5400ppm/°C.
3. Only HA16341NT/FP.
• Hot swap
Item
HSP ON threshold voltage
HSP charge current
HSP output Lo voltage
Symbol
VthHSP
IcHSP
VOLHSP
Rev.4.00 Jun 15, 2005 page 6 of 19
Min
1.14
–7
–
Note
HA16341NT/FP, HA16342NT/FP
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB,
GvOP4 = 40dB, RDB = 1.8kΩ)
• Oscillator
Min
Typ
Max
Unit
Typical oscillating
frequency
Item
fosctyp
Symbol
180
200
220
kHz
Maximum oscillating
frequency
foscmax
400
–
–
kHz
Typical oscillating
temperature stability
CT charge current
CT discharge current
Upper trip point
Lower trip point
Amplitude
Exit trigger Vth
dfosc
–
±5
–
%
–135
616
–
–
–
–0.3
–169
770
3.4
1.3
2.1
–0.5
–203
924
–
–
–
–0.7
µA
µA
V
V
V
V
Ici
Icd
VthCTH
VthCTL
dVCT
Vthtrig
Test Conditions
Note
±10%
–20°C < Ta < 85°C
1
±20%
±20%
2
Notes: 1. Design spec.
2. In case of external trigger control, CCT should be changed from 330 pF to 430 pF.
At this synchronous and 430 pF CCT condition VthCTH becomes about 2.9 V.
• Vref
Item
Reference voltage
Line regulation
Symbol
Vref
Vref-line
Min
4.9
–
Typ
5.0
5
Max
5.1
20
Unit
V
mV
Load regulation
Temperature stability
Vref-load
dVref
–
–
5
80
20
–
mV
ppm/°C
Symbol
VH
VL
dVUVL
Min
9.5
8.5
0.6
Typ
10.0
9.0
1.0
Max
10.5
9.5
1.4
Unit
V
V
V
Note:
Test Conditions
Iosource = 1mA
Note
±2%
Iosource = 1mA
12V < VCC < 18V
0 < Iosource < 3mA
–20°C < Ta < 85°C
1
1. Design spec.
• UVL
Item
Hi threshold voltage
Lo threshold voltage
Hysteresis
Rev.4.00 Jun 15, 2005 page 7 of 19
Test Conditions
Note
HA16341NT/FP, HA16342NT/FP
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB,
GvOP4 = 40dB, RDB = 1.8kΩ)
• PG1
Item
PG1 threshold Hi voltage
PG1 threshold Lo voltage
Input impedance
Symbol
VthHPG1
VthLPG1
RinPG1
Min
2.4
1.9
(37.5)
Typ
2.5
2.0
50.0
Max
2.6
2.1
(62.5)
Unit
V
V
kΩ
Test Conditions
Symbol
IleakFAIL
VOLFAIL
Min
–
–
Typ
–
–
Max
–10
0.5
Unit
µA
V
Test Conditions
VFAIL = 5V
Iosink = 10mA
Note
Item
Input threshold voltage
Symbol
VthEIN
Min
1.23
Typ
1.25
Max
1.27
Unit
V
Test Conditions
VEOUT = 1.25V
Note
±1.6%
Input bias current
Open loop gain
Band width
EOUT sink current
EOUT source current
EOUT clamp voltage
EOUT Lo voltage
Note: 1. Design spec.
IibEIN
AvoEA
BWEA
IosinkEA
IosourceEA
VOHEA
VOLEA
–
60
(0.7)
0.5
–100
5.8
–
–0.2
80
1.4
5.0
–250
6.8
–
–2.0
–
–
–
–
7.8
1.0
µA
dB
MHz
mA
µA
V
V
VEIN = 2V
Note:
Note
1
1. Design spec.
• FAIL
Item
Leak current
Output Lo voltage
• Error amp.
1
VEIN = 1.5V, EOUT = 1.1V
VEIN = 1.0V, EOUT = 5V
VEIN = 1.0V
VEIN = 1.5V, Iosink = 200µA
• PWM OUT
Item
Output Lo voltage
Output Hi voltage
Rise time
Fall time
Maximum duty
Minimum duty
Note: 1. Design spec.
Symbol
VOLPWM
VOHPWM
trPWM
tfPWM
Dmax
Dmin
Rev.4.00 Jun 15, 2005 page 8 of 19
Min
–
VCC−0.4
20
20
58
–
Typ
0.2
VCC−0.2
50
50
65
–
Max
0.4
–
100
100
72
0
Unit
V
V
ns
ns
%
%
Test Conditions
Iosink = 100mA
Iosource = 100mA
CL = 3300pF
CL = 3300pF
VSS = 4V, VEIN = 1.0V
VSS = 4V, VEIN = 1.5V
Note
HA16341NT/FP, HA16342NT/FP
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB,
GvOP4 = 40dB, RDB = 1.8kΩ)
• MR OUT
Item
Output Lo voltage
Output Hi voltage
Rise time
Fall time
Symbol
VOLMR
VOHMR
trMR
tfMR
Min
–
VCC−0.4
20
20
Typ
0.2
VCC−0.2
50
50
Max
0.4
–
100
100
Unit
V
V
ns
ns
Test Conditions
Iosink = 100mA
Iosource = 100mA
CL = 3300pF
CL = 3300pF
Note
Symbol
VOLMF
VOHMF
trMF
tfMF
Min
–
VCC−0.4
20
20
Typ
0.2
VCC−0.2
50
50
Max
0.4
–
100
100
Unit
V
V
ns
ns
Test Conditions
Iosink = 200mA
Iosource = 200mA
CL = 6000pF
CL = 6000pF
Note
Item
Dead band time1
Dead band time2
MR to MF delay time
PWM to MR delay time
MR delay time
Symbol
Td1typ
Td2typ
t1
t2
t3
Min
0
0
(−20)
(−20)
–
Typ
50
100
–
–
1
Max
100
200
(50)
(50)
–
Unit
ns
ns
ns
ns
µs
Test Conditions
RDB = 1.8kΩ
RDB = 1.8kΩ
t1 = MF off − MR on
t2 = MR off − PWM off
Note
Maximum Dead band
adjust time1
Tdadj1
–
Td1typ
+300
–
Maximum Dead band
adjust time2
Tdadj2
–
Td2typ
+600
–
• MF OUT
Item
Output Lo voltage
Output Hi voltage
Rise time
Fall time
• Dead band time
Note:
1. Design spec.
Measurement is 50% slice point.
Rev.4.00 Jun 15, 2005 page 9 of 19
1
1
t3 = CT low trip point –
MR on
1
ns
RDB = 47kΩ
1
ns
RDB = 47kΩ
1
HA16341NT/FP, HA16342NT/FP
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB,
GvOP4 = 40dB, RDB = 1.8kΩ)
• SS
Item
SS sink current
Symbol
Idss
Min
500
Typ
–
Max
–
Unit
µA
Test Conditions
PG1 = 2V, VSS = 2V
Note
Symbol
VOVP
Min
6.5
Typ
7.5
Max
8.5
Unit
V
Test Conditions
Note
Symbol
ICC
ISTBY
Min
5.4
–
Typ
7.4
200
Max
9.4
600
Unit
mA
µA
Test Conditions
VCT = 1V
VCC = 8V, PG1 = 0V
Note
• OVP
Item
OVP latch voltage
• Current consumption
Item
Operating current
Standby current
Rev.4.00 Jun 15, 2005 page 10 of 19
HA16341NT/FP, HA16342NT/FP
Timing Chart 1 (Total)
UVL1 Hi
10.0V typ
VCC
UVL1 Lo
9.0V typ
0V
UVL2 threshold
4.6V typ
Vref (5V typ)
0V
PG1
(by switch)
3V
ON
OFF
ON
0V
UVL2
(internal)
0V
SS
0V
VthCTH: 3.4V typ
CT
VthCTL: 1.3V typ
0V
OUT
(PWM)
Note 1
0V
1.25V (100%)
1.187V (95%)
EIN
0V
OUT
(HSP)
0V
Note: 1. The output of PWM, MR and MF do not appear in the first period of CT cycle due to start-up latch circuit.
Rev.4.00 Jun 15, 2005 page 11 of 19
HA16341NT/FP, HA16342NT/FP
Timing Chart 2 (Hot Swap)
Vref
0V
3V
PG1
0V
Internal latch signal
(inverting)
(OVP, OCL or
Reverse current)
: Node S1 in Block Diagram
0V
SET
RESET
UVL2
(internal)
0V
1.25V (100%)
1.187V (95%)
EIN
0V
Internal latch signal
: Node S2 in Block Diagram
0V
HSP out
Gate charging
by 10µA source current
0V
Note: Reverse current is HA16341NT/FP only.
Rev.4.00 Jun 15, 2005 page 12 of 19
Gate discharging
by 0.5A max sink current
HA16341NT/FP, HA16342NT/FP
Timing Chart 3 (Dead Band Control)
VSS
CT
PWM OUT
MR OUT
MF OUT
Td1
Td2
t2
t1
t3
Note: VSS determines maximum duty. This waveform example shows the case of EIN = Lo.
VSS: Voltage of SS pin
800
Td1
Td2
700
Vref
RDB
HA16341
DB
Td1, Td2 (ns)
600
500
400
300
200
100
0
0
10
20
30
RDB (kΩ)
Rev.4.00 Jun 15, 2005 page 13 of 19
40
50
HA16341NT/FP, HA16342NT/FP
Timing Chart 4 (Soft Start)
CT
SS
SS
CT
VthCTH: 3.4V
Note *
VthCTL: 1.3V
OUT
(PWM)
Note: Self-oscillation: VthCTH = 3.4V typ
Synchronized operation: VthCTH = 2.9V typ
Case VHSS ≥ VthCTH
Maximum duty would be the value specified in page 9.
Case VHSS < VthCTH
Maximum duty decrease to the corresponding value.
Please refer to formula 1 as design value of maximum duty.
Max duty = (tss − 0.63µs − Td1) × Operating frequency ⋅ ⋅ ⋅ ⋅ ⋅ Formula 1
C
tss = CT (VHSS − VthCTL)
Ici
: CT charge current
Ici
: CT terminal capacitor
CCT
VthCTH : CT upper trip point
VthCTL : CT lower trip point
Select values R1, R2 and C1 for suitable maximum duty and SS time constant.
Vref (5V)
R1
C1
HA16341
SS
R2
VHSS =
R2
Vref (5V)
R1 + R2
SS
C R1 R2
R1 + R2
Figure A. SS Terminal Application
Rev.4.00 Jun 15, 2005 page 14 of 19
HA16341NT/FP, HA16342NT/FP
Timing Chart 5 (External Trigger Control)
Primary IC
oscillation
0V
Primary IC
AUX-OUT
0V
Trigger input
(Trig terminal)
0V
Trigger Vth
Vtrig: −0.5V typ
Trigger detector
internal signal
0V
VthCTH = about 2.9V @CCT = 430pF
Secondary
oscillation
0V
This IC is triggered by negative pulse.
R1 and R2 must be calculated including internal impedance of 230kΩ.
Primary
Secondary
Vref (5V)
R1
Primary IC
AUX-OUT
230k
Trig
HA16341
R2
Figure B. External Trigger Application
Rev.4.00 Jun 15, 2005 page 15 of 19
HA16341NT/FP, HA16342NT/FP
Timing Chart 6 (Duty Control)
CT' + Vo OP1-2
(internal)
1/3×(EOUT−2VBE)
CT' + Vo OP1-2
300mV
1/3×(EOUT−2VBE)
(internal)
OUT
(PWM)
CT
5.33
The amplitude of CT' is 300mV typ at synchronous operation with trigger frequency as 200kHz and CCT = 430pF.
CT' =
1/3×(EOUT−2VBE)
1.24V clamp
1.3
1.24
1.2
1.1
1.0
0.9
Duty control area
0.8
No output area
in case of 50% max duty
Vo OP1-2 (V)
0.7
0.6
0.5
0.4
300mV
Max duty area
0.3
0.2
1.54V
0.1
2.44V
5.26V
0
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7
VEOUT (V)
Rev.4.00 Jun 15, 2005 page 16 of 19
HA16341NT/FP, HA16342NT/FP
Timing Chart 7 (Current Limitting)
1/3×(EOUT−2VBE) = 1.24V clamped
(internal)
CT' + Vo OP1-2
300mV
(internal)
OUT
(PWM)
CT
5.33
The amplitude of CT' is 300mV typ at synchronous operation with trigger frequency as 200kHz and CCT = 430pF.
CT' =
70
PWM ON Duty (%)
60
50
40
30
20
10
CCT = 430pF, RDB = 1.8kΩ, VHSS = 4V
Synchronized operation with 200kHz
0
20
30
40
50
CS(+) (mV)
Rev.4.00 Jun 15, 2005 page 17 of 19
60
70
HA16341NT/FP, HA16342NT/FP
Timing Chart 8 (Interface with Primary Control IC)
Vref
PG1
(from primary IC)
Internal latch signal (inverting)
(OVP, OCL or Reverse current)
: Node S1 in Block Diagram
UVL2
(internal signal)
OUT
(PWM)
FAIL
(to primary IC)
Note: Reverse current is HA16341NT/FP only.
Rev.4.00 Jun 15, 2005 page 18 of 19
SET
RESET
HA16341NT/FP, HA16342NT/FP
Package Dimensions
As of January, 2003
Unit: mm
27.10
28.10 Max
13
8.8
10.0 Max
24
12
4.04 ± 0.20
0.48 ± 0.10
0.51 Min
1.5 Max
1.78 ± 0.25
10.16
5.06 Max
1.0
2.54 Min
1
+ 0.10
0.25 – 0.05
1° − 13°
Package Code
JEDEC
JEITA
Mass (reference value)
DP-24TS
−
−
2.04 g
As of January, 2003
Unit: mm
18.4
19.2 Max
14
1
13
*0.37 ± 0.08
0.35 ± 0.06
2.8 3.6
0.10 − 0.10
0.80
+ 0.15
1.20 Max
0.16 M
*0.32 ± 0.07
0.30 ± 0.05
3.0 Max
8.3
26
10.93
+ 0.15
− 0.25
1.315
0° − 8°
+ 0.15
0.70 − 0.20
0.10
*Dimension including the plating thickness
Base material dimension
Rev.4.00 Jun 15, 2005 page 19 of 19
Package Code
JEDEC
JEITA
Mass (reference value)
FP-26DT
−
−
0.98 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0